JP2008527731A5 - - Google Patents

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Publication number
JP2008527731A5
JP2008527731A5 JP2007550755A JP2007550755A JP2008527731A5 JP 2008527731 A5 JP2008527731 A5 JP 2008527731A5 JP 2007550755 A JP2007550755 A JP 2007550755A JP 2007550755 A JP2007550755 A JP 2007550755A JP 2008527731 A5 JP2008527731 A5 JP 2008527731A5
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JP
Japan
Prior art keywords
substrate
semiconductor nitride
auxiliary
layer
carrier
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Granted
Application number
JP2007550755A
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English (en)
Japanese (ja)
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JP5312797B2 (ja
JP2008527731A (ja
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Publication date
Priority claimed from EP05290082A external-priority patent/EP1681712A1/en
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Publication of JP2008527731A publication Critical patent/JP2008527731A/ja
Publication of JP2008527731A5 publication Critical patent/JP2008527731A5/ja
Application granted granted Critical
Publication of JP5312797B2 publication Critical patent/JP5312797B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007550755A 2005-01-13 2006-01-12 オプトエレクトロニクス用基板の作製方法 Expired - Lifetime JP5312797B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05290082.6 2005-01-13
EP05290082A EP1681712A1 (en) 2005-01-13 2005-01-13 Method of producing substrates for optoelectronic applications
PCT/EP2006/000230 WO2006074933A1 (en) 2005-01-13 2006-01-12 Method of producing a substrate for an optoelectronic application

Publications (3)

Publication Number Publication Date
JP2008527731A JP2008527731A (ja) 2008-07-24
JP2008527731A5 true JP2008527731A5 (https=) 2012-01-19
JP5312797B2 JP5312797B2 (ja) 2013-10-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007550755A Expired - Lifetime JP5312797B2 (ja) 2005-01-13 2006-01-12 オプトエレクトロニクス用基板の作製方法

Country Status (6)

Country Link
US (3) US7537949B2 (https=)
EP (1) EP1681712A1 (https=)
JP (1) JP5312797B2 (https=)
KR (1) KR100905977B1 (https=)
CN (1) CN100580880C (https=)
WO (1) WO2006074933A1 (https=)

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US8409366B2 (en) * 2009-06-23 2013-04-02 Oki Data Corporation Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
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US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
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US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
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