CN100580880C - 用于光电子应用的基板的制造方法 - Google Patents

用于光电子应用的基板的制造方法 Download PDF

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Publication number
CN100580880C
CN100580880C CN200680001546A CN200680001546A CN100580880C CN 100580880 C CN100580880 C CN 100580880C CN 200680001546 A CN200680001546 A CN 200680001546A CN 200680001546 A CN200680001546 A CN 200680001546A CN 100580880 C CN100580880 C CN 100580880C
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China
Prior art keywords
substrate
layer
auxiliary
manufacturing
nitride
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Expired - Lifetime
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CN200680001546A
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Chinese (zh)
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CN101091234A (zh
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法布里斯·勒泰特
布鲁斯·富尔
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200680001546A 2005-01-13 2006-01-12 用于光电子应用的基板的制造方法 Expired - Lifetime CN100580880C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05290082.6 2005-01-13
EP05290082A EP1681712A1 (en) 2005-01-13 2005-01-13 Method of producing substrates for optoelectronic applications

Publications (2)

Publication Number Publication Date
CN101091234A CN101091234A (zh) 2007-12-19
CN100580880C true CN100580880C (zh) 2010-01-13

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CN200680001546A Expired - Lifetime CN100580880C (zh) 2005-01-13 2006-01-12 用于光电子应用的基板的制造方法

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Country Link
US (3) US7537949B2 (https=)
EP (1) EP1681712A1 (https=)
JP (1) JP5312797B2 (https=)
KR (1) KR100905977B1 (https=)
CN (1) CN100580880C (https=)
WO (1) WO2006074933A1 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
TWI267946B (en) * 2005-08-22 2006-12-01 Univ Nat Chiao Tung Interconnection of group III-V semiconductor device and fabrication method for making the same
CN100474642C (zh) * 2005-10-27 2009-04-01 晶能光电（江西）有限公司 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
FR2914494A1 (fr) * 2007-03-28 2008-10-03 Soitec Silicon On Insulator Procede de report d'une couche mince de materiau
US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
EP2171748A1 (en) * 2007-07-26 2010-04-07 S.O.I.Tec Silicon on Insulator Technologies Epitaxial methods and templates grown by the methods
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
WO2009015337A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
EP2105972A3 (en) * 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8409366B2 (en) * 2009-06-23 2013-04-02 Oki Data Corporation Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
CN107256915A (zh) 2009-09-18 2017-10-17 天空公司 发光二极管器件
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US8648387B2 (en) * 2009-12-30 2014-02-11 Industrial Technology Research Institute Nitride semiconductor template and method of manufacturing the same
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
KR101254716B1 (ko) * 2011-11-07 2013-04-15 삼성코닝정밀소재 주식회사 패턴을 갖는 전이기판 제조방법
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
JP5879964B2 (ja) * 2011-11-25 2016-03-08 住友電気工業株式会社 複合基板の製造方法および半導体デバイスの製造方法
EP2823515A4 (en) 2012-03-06 2015-08-19 Soraa Inc LIGHT-EMITTING DIODES WITH MATERIAL LAYERS WITH LOW BREAKING INDEX TO REDUCE LIGHT PIPE EFFECTS
JP2013247362A (ja) * 2012-05-29 2013-12-09 Samsung Corning Precision Materials Co Ltd 半導体素子用薄膜貼り合わせ基板の製造方法
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9548247B2 (en) * 2013-07-22 2017-01-17 Infineon Technologies Austria Ag Methods for producing semiconductor devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
WO2016075927A1 (ja) * 2014-11-11 2016-05-19 出光興産株式会社 新規な積層体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US20030232487A1 (en) * 2002-06-11 2003-12-18 Fabrice Letertre Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US20040014299A1 (en) * 2000-11-06 2004-01-22 Hubert Moriceau Method for making a stacked structure comprising a thin film adhering to a target substrate
US20040029359A1 (en) * 2000-11-27 2004-02-12 Fabrice Letertre Methods for fabricating a substrate
WO2005004231A1 (de) * 2003-06-24 2005-01-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen von halbleiterchips

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2540791B2 (ja) * 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
JP3325713B2 (ja) * 1994-08-22 2002-09-17 ローム株式会社 半導体発光素子の製法
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
JP2002284600A (ja) 2001-03-26 2002-10-03 Hitachi Cable Ltd 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3886341B2 (ja) * 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7052974B2 (en) * 2001-12-04 2006-05-30 Shin-Etsu Handotai Co., Ltd. Bonded wafer and method of producing bonded wafer
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
FR2835095B1 (fr) 2002-01-22 2005-03-18 Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique
TW577178B (en) 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6791120B2 (en) 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
KR20110042249A (ko) * 2003-06-04 2011-04-25 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US20040014299A1 (en) * 2000-11-06 2004-01-22 Hubert Moriceau Method for making a stacked structure comprising a thin film adhering to a target substrate
US20040029359A1 (en) * 2000-11-27 2004-02-12 Fabrice Letertre Methods for fabricating a substrate
US20030232487A1 (en) * 2002-06-11 2003-12-18 Fabrice Letertre Fabrication of substrates with a useful layer of monocrystalline semiconductor material
WO2005004231A1 (de) * 2003-06-24 2005-01-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen von halbleiterchips

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Enhancement of (In,Ga)N Light-Emitting Diode Performanceby Laser Liftoff and Transfer From Sapphire to Silicon.Z.S.Luo,Y.Cho,V.Loryenyong,T.Sands,N.W.Cheung,and M.C.Yoo.IEEE PHTONICS TECHNOLOGY LETTERS,Vol.14 No.10. 2002 *

Also Published As

Publication number Publication date
US20060166390A1 (en) 2006-07-27
US20110237008A1 (en) 2011-09-29
JP5312797B2 (ja) 2013-10-09
CN101091234A (zh) 2007-12-19
JP2008527731A (ja) 2008-07-24
US7537949B2 (en) 2009-05-26
EP1681712A1 (en) 2006-07-19
US8541290B2 (en) 2013-09-24
KR20070089821A (ko) 2007-09-03
US20090200569A1 (en) 2009-08-13
WO2006074933A1 (en) 2006-07-20
KR100905977B1 (ko) 2009-07-06

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