JP5312797B2 - オプトエレクトロニクス用基板の作製方法 - Google Patents

オプトエレクトロニクス用基板の作製方法 Download PDF

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Publication number
JP5312797B2
JP5312797B2 JP2007550755A JP2007550755A JP5312797B2 JP 5312797 B2 JP5312797 B2 JP 5312797B2 JP 2007550755 A JP2007550755 A JP 2007550755A JP 2007550755 A JP2007550755 A JP 2007550755A JP 5312797 B2 JP5312797 B2 JP 5312797B2
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substrate
layer
auxiliary
semiconductor nitride
carrier
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JP2008527731A (ja
JP2008527731A5 (https=
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レテルトル ファブリス
フォーレ ブルース
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007550755A 2005-01-13 2006-01-12 オプトエレクトロニクス用基板の作製方法 Expired - Lifetime JP5312797B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05290082.6 2005-01-13
EP05290082A EP1681712A1 (en) 2005-01-13 2005-01-13 Method of producing substrates for optoelectronic applications
PCT/EP2006/000230 WO2006074933A1 (en) 2005-01-13 2006-01-12 Method of producing a substrate for an optoelectronic application

Publications (3)

Publication Number Publication Date
JP2008527731A JP2008527731A (ja) 2008-07-24
JP2008527731A5 JP2008527731A5 (https=) 2012-01-19
JP5312797B2 true JP5312797B2 (ja) 2013-10-09

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JP2007550755A Expired - Lifetime JP5312797B2 (ja) 2005-01-13 2006-01-12 オプトエレクトロニクス用基板の作製方法

Country Status (6)

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US (3) US7537949B2 (https=)
EP (1) EP1681712A1 (https=)
JP (1) JP5312797B2 (https=)
KR (1) KR100905977B1 (https=)
CN (1) CN100580880C (https=)
WO (1) WO2006074933A1 (https=)

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US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
WO2009015337A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
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US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
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US8409366B2 (en) * 2009-06-23 2013-04-02 Oki Data Corporation Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
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US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
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US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
KR101254716B1 (ko) * 2011-11-07 2013-04-15 삼성코닝정밀소재 주식회사 패턴을 갖는 전이기판 제조방법
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
JP5879964B2 (ja) * 2011-11-25 2016-03-08 住友電気工業株式会社 複合基板の製造方法および半導体デバイスの製造方法
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US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
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Also Published As

Publication number Publication date
US20060166390A1 (en) 2006-07-27
US20110237008A1 (en) 2011-09-29
CN101091234A (zh) 2007-12-19
JP2008527731A (ja) 2008-07-24
US7537949B2 (en) 2009-05-26
EP1681712A1 (en) 2006-07-19
US8541290B2 (en) 2013-09-24
KR20070089821A (ko) 2007-09-03
US20090200569A1 (en) 2009-08-13
WO2006074933A1 (en) 2006-07-20
KR100905977B1 (ko) 2009-07-06
CN100580880C (zh) 2010-01-13

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