JP2008527725A5 - - Google Patents

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Publication number
JP2008527725A5
JP2008527725A5 JP2007550566A JP2007550566A JP2008527725A5 JP 2008527725 A5 JP2008527725 A5 JP 2008527725A5 JP 2007550566 A JP2007550566 A JP 2007550566A JP 2007550566 A JP2007550566 A JP 2007550566A JP 2008527725 A5 JP2008527725 A5 JP 2008527725A5
Authority
JP
Japan
Prior art keywords
insulating mandrel
mandrel
insulating
forming
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007550566A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008527725A (ja
JP5015802B2 (ja
Filing date
Publication date
Priority claimed from US10/905,590 external-priority patent/US7345370B2/en
Application filed filed Critical
Publication of JP2008527725A publication Critical patent/JP2008527725A/ja
Publication of JP2008527725A5 publication Critical patent/JP2008527725A5/ja
Application granted granted Critical
Publication of JP5015802B2 publication Critical patent/JP5015802B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007550566A 2005-01-12 2006-01-10 選択的な金属めっきにより形成される配線構造体及びその形成方法 Expired - Fee Related JP5015802B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/905,590 US7345370B2 (en) 2005-01-12 2005-01-12 Wiring patterns formed by selective metal plating
US10/905,590 2005-01-12
PCT/US2006/000844 WO2006076377A2 (en) 2005-01-12 2006-01-10 Wiring patterns formed by selective metal plating

Publications (3)

Publication Number Publication Date
JP2008527725A JP2008527725A (ja) 2008-07-24
JP2008527725A5 true JP2008527725A5 (enExample) 2008-12-11
JP5015802B2 JP5015802B2 (ja) 2012-08-29

Family

ID=36653820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007550566A Expired - Fee Related JP5015802B2 (ja) 2005-01-12 2006-01-10 選択的な金属めっきにより形成される配線構造体及びその形成方法

Country Status (5)

Country Link
US (2) US7345370B2 (enExample)
EP (1) EP1849187A4 (enExample)
JP (1) JP5015802B2 (enExample)
CN (1) CN100524712C (enExample)
WO (1) WO2006076377A2 (enExample)

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US8815747B2 (en) * 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
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US9583435B2 (en) 2013-03-15 2017-02-28 Microchip Technology Incorporated Forming fence conductors using spacer etched trenches
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US10490497B2 (en) 2014-06-13 2019-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Selective formation of conductor nanowires
US9312064B1 (en) 2015-03-02 2016-04-12 Western Digital (Fremont), Llc Method to fabricate a magnetic head including ion milling of read gap using dual layer hard mask
US10037957B2 (en) * 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
US9966338B1 (en) * 2017-04-18 2018-05-08 Globalfoundries Inc. Pre-spacer self-aligned cut formation
US11672128B2 (en) * 2020-07-20 2023-06-06 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices
US12183630B2 (en) * 2022-03-09 2024-12-31 International Business Machines Corporation Additive interconnect formation

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