JP2008526019A - フレキシブル電子回路製品及びその製造方法 - Google Patents

フレキシブル電子回路製品及びその製造方法 Download PDF

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Publication number
JP2008526019A
JP2008526019A JP2007548229A JP2007548229A JP2008526019A JP 2008526019 A JP2008526019 A JP 2008526019A JP 2007548229 A JP2007548229 A JP 2007548229A JP 2007548229 A JP2007548229 A JP 2007548229A JP 2008526019 A JP2008526019 A JP 2008526019A
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JP
Japan
Prior art keywords
layer
fec
substrate
electronic circuit
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007548229A
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English (en)
Japanese (ja)
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JP2008526019A5 (enExample
Inventor
モージズ・エム・デイビッド
キャサリン・ビー・シェイ
バドリ・ベーララガバン
英男 山崎
ジェイムズ・アール・シャーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2008526019A publication Critical patent/JP2008526019A/ja
Publication of JP2008526019A5 publication Critical patent/JP2008526019A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2007548229A 2004-12-22 2005-11-17 フレキシブル電子回路製品及びその製造方法 Pending JP2008526019A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,135 US20060131700A1 (en) 2004-12-22 2004-12-22 Flexible electronic circuit articles and methods of making thereof
PCT/US2005/041827 WO2006068741A2 (en) 2004-12-22 2005-11-17 Flexible electronic circuit articles and methods of making thereof

Publications (2)

Publication Number Publication Date
JP2008526019A true JP2008526019A (ja) 2008-07-17
JP2008526019A5 JP2008526019A5 (enExample) 2009-01-08

Family

ID=36594619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007548229A Pending JP2008526019A (ja) 2004-12-22 2005-11-17 フレキシブル電子回路製品及びその製造方法

Country Status (7)

Country Link
US (1) US20060131700A1 (enExample)
EP (1) EP1829101A2 (enExample)
JP (1) JP2008526019A (enExample)
KR (1) KR20070091209A (enExample)
CN (1) CN101088156A (enExample)
TW (1) TW200638529A (enExample)
WO (1) WO2006068741A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053352B2 (en) * 2005-10-13 2011-11-08 International Business Machines Corporation Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes
US20080003804A1 (en) * 2006-06-29 2008-01-03 Ravi Nalla Method of providing solder bumps of mixed sizes on a substrate using solder transfer in two stages
US8158264B2 (en) * 2006-10-20 2012-04-17 3M Innovative Properties Company Method for easy-to-clean substrates and articles therefrom
US20080280164A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Microporous carbon catalyst support material
KR100891531B1 (ko) * 2007-09-10 2009-04-03 주식회사 하이닉스반도체 패턴 정렬 불량 검출 장치
CN102981378A (zh) * 2012-11-15 2013-03-20 中山大学 一种去除聚酰亚胺柔性电极制备过程中光刻胶的方法
US10014456B2 (en) 2014-03-25 2018-07-03 3M Innovative Properties Company Flexible circuits with coplanar conductive features and methods of making same
WO2016022628A1 (en) 2014-08-07 2016-02-11 3M Innovative Properties Company Reflection sheet and method of manufacturing the same
US10351729B2 (en) * 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films
CN106711085B (zh) * 2016-12-12 2019-02-19 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技（成都）有限公司 导电层及其制作方法和电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0766549A (ja) * 1993-08-23 1995-03-10 Matsushita Electric Works Ltd 金属と有機物の接合方法および配線板の製造方法
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
DE3818509A1 (de) * 1987-06-01 1988-12-22 Gen Electric Verfahren und einrichtung zum herstellen eines niederohmigen kontaktes mit aluminium und dessen legierungen durch selektives niederschlagen von wolfram
JP2000164887A (ja) * 1992-07-21 2000-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
US5684356A (en) * 1996-03-29 1997-11-04 Texas Instruments Incorporated Hydrogen-rich, low dielectric constant gate insulator for field emission device
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置
US6299294B1 (en) * 1999-07-29 2001-10-09 Hewlett-Packard Company High efficiency printhead containing a novel oxynitride-based resistor system
US6696157B1 (en) * 2000-03-05 2004-02-24 3M Innovative Properties Company Diamond-like glass thin films
US6863795B2 (en) * 2001-03-23 2005-03-08 Interuniversitair Microelektronica Centrum (Imec) Multi-step method for metal deposition
WO2003005438A2 (en) * 2001-07-02 2003-01-16 Dow Corning Corporation Improved metal barrier behavior by sic:h deposition on porous materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0766549A (ja) * 1993-08-23 1995-03-10 Matsushita Electric Works Ltd 金属と有機物の接合方法および配線板の製造方法
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Also Published As

Publication number Publication date
CN101088156A (zh) 2007-12-12
TW200638529A (en) 2006-11-01
EP1829101A2 (en) 2007-09-05
WO2006068741A3 (en) 2007-01-25
WO2006068741A2 (en) 2006-06-29
KR20070091209A (ko) 2007-09-07
US20060131700A1 (en) 2006-06-22

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