KR20070091209A - 가요성 전자 회로 용품 및 그의 제조 방법 - Google Patents

가요성 전자 회로 용품 및 그의 제조 방법 Download PDF

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Publication number
KR20070091209A
KR20070091209A KR1020077016718A KR20077016718A KR20070091209A KR 20070091209 A KR20070091209 A KR 20070091209A KR 1020077016718 A KR1020077016718 A KR 1020077016718A KR 20077016718 A KR20077016718 A KR 20077016718A KR 20070091209 A KR20070091209 A KR 20070091209A
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KR
South Korea
Prior art keywords
layer
fec
silicon
plasma
article
Prior art date
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Ceased
Application number
KR1020077016718A
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English (en)
Korean (ko)
Inventor
모세스 엠. 데이비드
캐서린 비. 셰이
바드리 비라라가반
히데오 야마자끼
제임스 알. 셔크
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20070091209A publication Critical patent/KR20070091209A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387Flexible insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
KR1020077016718A 2004-12-22 2005-11-17 가요성 전자 회로 용품 및 그의 제조 방법 Ceased KR20070091209A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,135 2004-12-22
US11/021,135 US20060131700A1 (en) 2004-12-22 2004-12-22 Flexible electronic circuit articles and methods of making thereof

Publications (1)

Publication Number Publication Date
KR20070091209A true KR20070091209A (ko) 2007-09-07

Family

ID=36594619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077016718A Ceased KR20070091209A (ko) 2004-12-22 2005-11-17 가요성 전자 회로 용품 및 그의 제조 방법

Country Status (7)

Country Link
US (1) US20060131700A1 (enExample)
EP (1) EP1829101A2 (enExample)
JP (1) JP2008526019A (enExample)
KR (1) KR20070091209A (enExample)
CN (1) CN101088156A (enExample)
TW (1) TW200638529A (enExample)
WO (1) WO2006068741A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053352B2 (en) * 2005-10-13 2011-11-08 International Business Machines Corporation Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes
US20080003804A1 (en) * 2006-06-29 2008-01-03 Ravi Nalla Method of providing solder bumps of mixed sizes on a substrate using solder transfer in two stages
CN101528975B (zh) * 2006-10-20 2012-05-23 3M创新有限公司 用于易于清洁的基底的方法以及由其制得的制品
US20080280164A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Microporous carbon catalyst support material
KR100891531B1 (ko) * 2007-09-10 2009-04-03 주식회사 하이닉스반도체 패턴 정렬 불량 검출 장치
CN102981378A (zh) * 2012-11-15 2013-03-20 中山大学 一种去除聚酰亚胺柔性电极制备过程中光刻胶的方法
US10014456B2 (en) 2014-03-25 2018-07-03 3M Innovative Properties Company Flexible circuits with coplanar conductive features and methods of making same
KR20170038894A (ko) 2014-08-07 2017-04-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사 시트 및 그의 제조 방법
US10351729B2 (en) * 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films
CN106711085B (zh) * 2016-12-12 2019-02-19 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技(成都)有限公司 导电层及其制作方法和电子设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
DE3818509A1 (de) * 1987-06-01 1988-12-22 Gen Electric Verfahren und einrichtung zum herstellen eines niederohmigen kontaktes mit aluminium und dessen legierungen durch selektives niederschlagen von wolfram
JP2000164888A (ja) * 1992-07-21 2000-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2592392B2 (ja) * 1993-03-30 1997-03-19 株式会社 半導体エネルギー研究所 珪素を含む炭素被膜の作製方法
JP3344017B2 (ja) * 1993-08-23 2002-11-11 松下電工株式会社 金属と有機物の接合方法および配線板の製造方法
US5684356A (en) * 1996-03-29 1997-11-04 Texas Instruments Incorporated Hydrogen-rich, low dielectric constant gate insulator for field emission device
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置
US6299294B1 (en) * 1999-07-29 2001-10-09 Hewlett-Packard Company High efficiency printhead containing a novel oxynitride-based resistor system
US6696157B1 (en) * 2000-03-05 2004-02-24 3M Innovative Properties Company Diamond-like glass thin films
US6863795B2 (en) * 2001-03-23 2005-03-08 Interuniversitair Microelektronica Centrum (Imec) Multi-step method for metal deposition
US6541842B2 (en) * 2001-07-02 2003-04-01 Dow Corning Corporation Metal barrier behavior by SiC:H deposition on porous materials
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Also Published As

Publication number Publication date
EP1829101A2 (en) 2007-09-05
TW200638529A (en) 2006-11-01
CN101088156A (zh) 2007-12-12
WO2006068741A3 (en) 2007-01-25
JP2008526019A (ja) 2008-07-17
WO2006068741A2 (en) 2006-06-29
US20060131700A1 (en) 2006-06-22

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