JP2008526019A - フレキシブル電子回路製品及びその製造方法 - Google Patents

フレキシブル電子回路製品及びその製造方法 Download PDF

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Publication number
JP2008526019A
JP2008526019A JP2007548229A JP2007548229A JP2008526019A JP 2008526019 A JP2008526019 A JP 2008526019A JP 2007548229 A JP2007548229 A JP 2007548229A JP 2007548229 A JP2007548229 A JP 2007548229A JP 2008526019 A JP2008526019 A JP 2008526019A
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JP
Japan
Prior art keywords
layer
fec
substrate
electronic circuit
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007548229A
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English (en)
Japanese (ja)
Other versions
JP2008526019A5 (OSRAM
Inventor
モージズ・エム・デイビッド
キャサリン・ビー・シェイ
バドリ・ベーララガバン
英男 山崎
ジェイムズ・アール・シャーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2008526019A publication Critical patent/JP2008526019A/ja
Publication of JP2008526019A5 publication Critical patent/JP2008526019A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2007548229A 2004-12-22 2005-11-17 フレキシブル電子回路製品及びその製造方法 Pending JP2008526019A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,135 US20060131700A1 (en) 2004-12-22 2004-12-22 Flexible electronic circuit articles and methods of making thereof
PCT/US2005/041827 WO2006068741A2 (en) 2004-12-22 2005-11-17 Flexible electronic circuit articles and methods of making thereof

Publications (2)

Publication Number Publication Date
JP2008526019A true JP2008526019A (ja) 2008-07-17
JP2008526019A5 JP2008526019A5 (OSRAM) 2009-01-08

Family

ID=36594619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007548229A Pending JP2008526019A (ja) 2004-12-22 2005-11-17 フレキシブル電子回路製品及びその製造方法

Country Status (7)

Country Link
US (1) US20060131700A1 (OSRAM)
EP (1) EP1829101A2 (OSRAM)
JP (1) JP2008526019A (OSRAM)
KR (1) KR20070091209A (OSRAM)
CN (1) CN101088156A (OSRAM)
TW (1) TW200638529A (OSRAM)
WO (1) WO2006068741A2 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053352B2 (en) * 2005-10-13 2011-11-08 International Business Machines Corporation Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes
US20080003804A1 (en) * 2006-06-29 2008-01-03 Ravi Nalla Method of providing solder bumps of mixed sizes on a substrate using solder transfer in two stages
JP5385146B2 (ja) * 2006-10-20 2014-01-08 スリーエム イノベイティブ プロパティズ カンパニー 易洗浄基材のための方法及びそれによる物品
US20080280164A1 (en) * 2007-05-11 2008-11-13 3M Innovative Properties Company Microporous carbon catalyst support material
KR100891531B1 (ko) * 2007-09-10 2009-04-03 주식회사 하이닉스반도체 패턴 정렬 불량 검출 장치
CN102981378A (zh) * 2012-11-15 2013-03-20 中山大学 一种去除聚酰亚胺柔性电极制备过程中光刻胶的方法
US10014456B2 (en) 2014-03-25 2018-07-03 3M Innovative Properties Company Flexible circuits with coplanar conductive features and methods of making same
JP2017532586A (ja) 2014-08-07 2017-11-02 スリーエム イノベイティブ プロパティズ カンパニー 反射シート及びその製造方法
US10351729B2 (en) * 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films
CN106711085B (zh) * 2016-12-12 2019-02-19 东莞市广信知识产权服务有限公司 一种柔性互连金属的制备方法
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技(成都)有限公司 导电层及其制作方法和电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0766549A (ja) * 1993-08-23 1995-03-10 Matsushita Electric Works Ltd 金属と有機物の接合方法および配線板の製造方法
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
JP2798250B2 (ja) * 1987-06-01 1998-09-17 ゼネラル・エレクトリック・カンパニイ アルミニウム物質との低抵抗接点形成方法,およびアルミニウムとの低抵抗接点
JP2000164888A (ja) * 1992-07-21 2000-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
US5684356A (en) * 1996-03-29 1997-11-04 Texas Instruments Incorporated Hydrogen-rich, low dielectric constant gate insulator for field emission device
US5948166A (en) * 1996-11-05 1999-09-07 3M Innovative Properties Company Process and apparatus for depositing a carbon-rich coating on a moving substrate
US5888594A (en) * 1996-11-05 1999-03-30 Minnesota Mining And Manufacturing Company Process for depositing a carbon-rich coating on a moving substrate
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置
US6299294B1 (en) * 1999-07-29 2001-10-09 Hewlett-Packard Company High efficiency printhead containing a novel oxynitride-based resistor system
US6696157B1 (en) * 2000-03-05 2004-02-24 3M Innovative Properties Company Diamond-like glass thin films
US6863795B2 (en) * 2001-03-23 2005-03-08 Interuniversitair Microelektronica Centrum (Imec) Multi-step method for metal deposition
CN1596466A (zh) * 2001-07-02 2005-03-16 陶氏康宁公司 通过在多孔材料上的sic∶h沉积提高金属阻挡性能

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0766549A (ja) * 1993-08-23 1995-03-10 Matsushita Electric Works Ltd 金属と有機物の接合方法および配線板の製造方法
JP2004098570A (ja) * 2002-09-11 2004-04-02 Amt Kenkyusho:Kk フィルム状積層体およびフレキシブル回路基板

Also Published As

Publication number Publication date
TW200638529A (en) 2006-11-01
EP1829101A2 (en) 2007-09-05
WO2006068741A2 (en) 2006-06-29
CN101088156A (zh) 2007-12-12
US20060131700A1 (en) 2006-06-22
WO2006068741A3 (en) 2007-01-25
KR20070091209A (ko) 2007-09-07

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