JP2008523612A5 - - Google Patents
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- Publication number
- JP2008523612A5 JP2008523612A5 JP2007545439A JP2007545439A JP2008523612A5 JP 2008523612 A5 JP2008523612 A5 JP 2008523612A5 JP 2007545439 A JP2007545439 A JP 2007545439A JP 2007545439 A JP2007545439 A JP 2007545439A JP 2008523612 A5 JP2008523612 A5 JP 2008523612A5
- Authority
- JP
- Japan
- Prior art keywords
- transition energy
- potential well
- semiconductor device
- energy
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000007704 transition Effects 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000010521 absorption reaction Methods 0.000 claims 4
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/009,241 US7745814B2 (en) | 2004-12-09 | 2004-12-09 | Polychromatic LED's and related semiconductor devices |
| PCT/US2005/029852 WO2006062560A1 (en) | 2004-12-09 | 2005-08-22 | Polychromatic led's and related semiconductor devices |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011111294A Division JP2011187977A (ja) | 2004-12-09 | 2011-05-18 | 多色ledおよび関連半導体デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008523612A JP2008523612A (ja) | 2008-07-03 |
| JP2008523612A5 true JP2008523612A5 (enExample) | 2008-10-09 |
Family
ID=36046862
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007545439A Withdrawn JP2008523612A (ja) | 2004-12-09 | 2005-08-22 | 多色ledおよび関連半導体デバイス |
| JP2011111294A Pending JP2011187977A (ja) | 2004-12-09 | 2011-05-18 | 多色ledおよび関連半導体デバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011111294A Pending JP2011187977A (ja) | 2004-12-09 | 2011-05-18 | 多色ledおよび関連半導体デバイス |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7745814B2 (enExample) |
| EP (1) | EP1825526B1 (enExample) |
| JP (2) | JP2008523612A (enExample) |
| KR (1) | KR101180248B1 (enExample) |
| CN (1) | CN100557830C (enExample) |
| AT (1) | ATE411620T1 (enExample) |
| DE (1) | DE602005010475D1 (enExample) |
| WO (1) | WO2006062560A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
| US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| US7863634B2 (en) * | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
| KR20090018623A (ko) * | 2006-06-12 | 2009-02-20 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 재발광 반도체 구성 및 수렴 광학 요소를 갖는 led 소자 |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
| US7717599B2 (en) * | 2006-07-31 | 2010-05-18 | 3M Innovative Properties Company | Integrating light source module |
| US20080051135A1 (en) * | 2006-07-31 | 2008-02-28 | 3M Innovative Properties Company | Combination camera/projector system |
| EP2050147A2 (en) | 2006-07-31 | 2009-04-22 | 3M Innovative Properties Company | Led source with hollow collection lens |
| KR20090034369A (ko) | 2006-07-31 | 2009-04-07 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 광학 투사 서브시스템 |
| US8075140B2 (en) * | 2006-07-31 | 2011-12-13 | 3M Innovative Properties Company | LED illumination system with polarization recycling |
| US20080036972A1 (en) * | 2006-07-31 | 2008-02-14 | 3M Innovative Properties Company | Led mosaic |
| JP2010525555A (ja) * | 2007-03-08 | 2010-07-22 | スリーエム イノベイティブ プロパティズ カンパニー | 発光素子のアレイ |
| EP2160645A2 (en) | 2007-05-20 | 2010-03-10 | 3M Innovative Properties Company | Light recycling hollow cavity type display backlight |
| TWI439641B (zh) * | 2007-05-20 | 2014-06-01 | 3M Innovative Properties Co | 用於側面發光型背光之準直光注入器 |
| WO2008144636A2 (en) | 2007-05-20 | 2008-11-27 | 3M Innovative Properties Company | Design parameters for thin hollow cavity backlights of the light-recycling type |
| JP2010528432A (ja) * | 2007-05-20 | 2010-08-19 | スリーエム イノベイティブ プロパティズ カンパニー | カラーled光源を効率的に利用した白色光バックライト及び類似製品 |
| WO2008144644A2 (en) | 2007-05-20 | 2008-11-27 | 3M Innovative Properties Company | Semi-specular components in hollow cavity light recycling backlights |
| CN101939855B (zh) * | 2007-12-10 | 2013-10-30 | 3M创新有限公司 | 半导体发光装置及其制造方法 |
| EP2255231A1 (en) * | 2008-02-07 | 2010-12-01 | 3M Innovative Properties Company | Hollow backlight with structured films |
| JP5792464B2 (ja) * | 2008-02-22 | 2015-10-14 | スリーエム イノベイティブ プロパティズ カンパニー | 選択的出力光束分布を有するバックライト及びそれを使用した表示システム並びにバックライトの形成方法 |
| EP2297607B1 (en) * | 2008-06-04 | 2014-04-23 | 3M Innovative Properties Company | Hollow backlight with tilted light source |
| KR20110019390A (ko) * | 2008-06-05 | 2011-02-25 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접합형 반도체 파장 변환기를 갖는 발광 다이오드 |
| JP2011526074A (ja) * | 2008-06-26 | 2011-09-29 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体光変換構成体 |
| US8591052B2 (en) * | 2008-10-27 | 2013-11-26 | 3M Innovative Properties Company | Semispecular hollow backlight with gradient extraction |
| US8192048B2 (en) * | 2009-04-22 | 2012-06-05 | 3M Innovative Properties Company | Lighting assemblies and systems |
| CN102668044A (zh) * | 2009-11-18 | 2012-09-12 | 3M创新有限公司 | 用于ii-vi族半导体的新型湿蚀刻剂及方法 |
| WO2011153141A2 (en) * | 2010-06-03 | 2011-12-08 | 3M Innovative Properties Company | Light converting and emitting device with suppressed dark-line defects |
| US8975614B2 (en) * | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
| US9331252B2 (en) | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
| KR102019858B1 (ko) * | 2013-07-18 | 2019-09-09 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| DE102017103856A1 (de) | 2017-02-24 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| KR102809724B1 (ko) * | 2020-03-27 | 2025-05-21 | 구글 엘엘씨 | 변형이 감소된 인듐 갈륨 질화물 발광 다이오드 |
| US20220181516A1 (en) * | 2020-12-04 | 2022-06-09 | Seoul Viosys Co., Ltd. | Mixed color light emitting device |
| CN115274949A (zh) * | 2022-07-22 | 2022-11-01 | 厦门士兰明镓化合物半导体有限公司 | 一种发光二极管及其制备方法 |
| CN115360274A (zh) * | 2022-07-22 | 2022-11-18 | 厦门士兰明镓化合物半导体有限公司 | 一种发光二极管及其制备方法 |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4527179A (en) | 1981-02-09 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystal light emitting semiconductor device |
| FR2538171B1 (fr) | 1982-12-21 | 1986-02-28 | Thomson Csf | Diode electroluminescente a emission de surface |
| US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
| JPH06244506A (ja) | 1993-02-19 | 1994-09-02 | Sony Corp | 半導体表示装置及びその製造方法 |
| US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
| JPH06268331A (ja) | 1993-03-11 | 1994-09-22 | Toshiba Corp | 半導体発光装置 |
| JP2991616B2 (ja) * | 1994-06-30 | 1999-12-20 | シャープ株式会社 | 半導体発光素子 |
| US5646419A (en) | 1995-04-07 | 1997-07-08 | California Institute Of Technology | n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same |
| DE19542241C2 (de) | 1995-11-13 | 2003-01-09 | Siemens Ag | Optoelektronisches Bauelement in II-VI-Halbleitermaterial |
| JPH09181398A (ja) | 1995-12-25 | 1997-07-11 | Sony Corp | 半導体発光素子 |
| US5889295A (en) | 1996-02-26 | 1999-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| DE19703615A1 (de) | 1997-01-31 | 1998-08-06 | Siemens Ag | Optoelektronisches Halbleiterbauelement |
| DE19729396A1 (de) | 1997-07-09 | 1999-01-14 | Siemens Ag | Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes |
| US6214116B1 (en) * | 1998-01-17 | 2001-04-10 | Hanvac Corporation | Horizontal reactor for compound semiconductor growth |
| JP3559446B2 (ja) | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
| EP0954034A3 (en) * | 1998-04-28 | 2000-01-26 | Canare Electric Co., Ltd. | Light receiving device with quantum-wave interference layers |
| TW406442B (en) | 1998-07-09 | 2000-09-21 | Sumitomo Electric Industries | White colored LED and intermediate colored LED |
| US5988925A (en) * | 1998-10-26 | 1999-11-23 | Baggett; R. Sherman | Stacked paper fastener |
| CN1070315C (zh) * | 1998-11-06 | 2001-08-29 | 吉林大学 | 有机多量子阱结构白光电致发光器件 |
| US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
| US6303404B1 (en) | 1999-05-28 | 2001-10-16 | Yong Tae Moon | Method for fabricating white light emitting diode using InGaN phase separation |
| WO2000076005A1 (en) | 1999-06-04 | 2000-12-14 | Trustees Of Boston University | Photon recycling semiconductor multi-wavelength light-emitting diodes |
| DE19952932C1 (de) | 1999-11-03 | 2001-05-03 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit breitbandiger Anregung |
| US6504171B1 (en) | 2000-01-24 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Chirped multi-well active region LED |
| JP3486900B2 (ja) | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
| AU2001252894A1 (en) | 2000-03-06 | 2001-09-17 | Teledyne Lighting And Display Products, Inc. | Lighting apparatus having quantum dot layer |
| JP4008656B2 (ja) | 2000-12-27 | 2007-11-14 | 株式会社東芝 | 半導体発光装置 |
| TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
| KR100382481B1 (ko) | 2000-06-09 | 2003-05-01 | 엘지전자 주식회사 | 백색 발광 다이오드 소자 및 그 제조 방법 |
| DE10036940A1 (de) * | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
| JP2002217456A (ja) | 2001-01-19 | 2002-08-02 | Ngk Insulators Ltd | 半導体発光素子 |
| JP2002222989A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
| US6711194B2 (en) | 2001-02-08 | 2004-03-23 | The Furukawa Electric Co., Ltd. | High output power semiconductor laser diode |
| KR100422944B1 (ko) | 2001-05-31 | 2004-03-12 | 삼성전기주식회사 | 반도체 엘이디(led) 소자 |
| JP3791765B2 (ja) | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
| US6837605B2 (en) | 2001-11-28 | 2005-01-04 | Osram Opto Semiconductors Gmbh | Led illumination system |
| US6711195B2 (en) | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
| US6831306B1 (en) * | 2002-03-06 | 2004-12-14 | Daktronics, Inc. | Extended length light emitting diode |
| US6838605B2 (en) * | 2002-04-15 | 2005-01-04 | Remo, Inc. | Drumshell laminate |
| CA2427559A1 (en) | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
| JP2004047748A (ja) | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
| JP2004072047A (ja) | 2002-08-09 | 2004-03-04 | Sumitomo Electric Ind Ltd | 白色発光素子、白色発光素子用基板および白色発光素子用基板の製造方法 |
| US6791104B2 (en) | 2002-09-26 | 2004-09-14 | Wisconsin Alumni Research Foundation | Type II quantum well optoelectronic devices |
| MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
| TW591811B (en) | 2003-01-02 | 2004-06-11 | Epitech Technology Corp Ltd | Color mixing light emitting diode |
| JP3717480B2 (ja) | 2003-01-27 | 2005-11-16 | ローム株式会社 | 半導体発光装置 |
| TWI289937B (en) | 2003-03-04 | 2007-11-11 | Topco Scient Co Ltd | White light LED |
| EP1475835A3 (en) | 2003-04-14 | 2004-12-15 | Epitech Corporation, Ltd. | Color mixing light emitting diode |
| US7126160B2 (en) * | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
| US7223998B2 (en) | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
| JP4291239B2 (ja) * | 2004-09-10 | 2009-07-08 | エルピーダメモリ株式会社 | 半導体記憶装置及びテスト方法 |
| US20060081858A1 (en) * | 2004-10-14 | 2006-04-20 | Chung-Hsiang Lin | Light emitting device with omnidirectional reflectors |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
| US9018619B2 (en) * | 2006-10-09 | 2015-04-28 | Cree, Inc. | Quantum wells for light conversion |
-
2004
- 2004-12-09 US US11/009,241 patent/US7745814B2/en not_active Expired - Fee Related
-
2005
- 2005-08-22 CN CNB2005800425034A patent/CN100557830C/zh not_active Expired - Fee Related
- 2005-08-22 WO PCT/US2005/029852 patent/WO2006062560A1/en not_active Ceased
- 2005-08-22 AT AT05791694T patent/ATE411620T1/de not_active IP Right Cessation
- 2005-08-22 KR KR1020077015505A patent/KR101180248B1/ko not_active Expired - Fee Related
- 2005-08-22 EP EP05791694A patent/EP1825526B1/en not_active Expired - Lifetime
- 2005-08-22 JP JP2007545439A patent/JP2008523612A/ja not_active Withdrawn
- 2005-08-22 DE DE602005010475T patent/DE602005010475D1/de not_active Expired - Lifetime
-
2010
- 2010-05-17 US US12/781,227 patent/US8148741B2/en not_active Expired - Fee Related
-
2011
- 2011-05-18 JP JP2011111294A patent/JP2011187977A/ja active Pending
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