JP2008523612A - 多色ｌｅｄおよび関連半導体デバイス - Google Patents

多色ｌｅｄおよび関連半導体デバイス Download PDF

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Publication number
JP2008523612A
JP2008523612A JP2007545439A JP2007545439A JP2008523612A JP 2008523612 A JP2008523612 A JP 2008523612A JP 2007545439 A JP2007545439 A JP 2007545439A JP 2007545439 A JP2007545439 A JP 2007545439A JP 2008523612 A JP2008523612 A JP 2008523612A
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Prior art keywords
semiconductor device
potential well
transition energy
led
well
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Japanese (ja)
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JP2008523612A5 (enExample
Inventor
ジェイ． ミラー，トーマス
エー． ハッセ，マイケル
サン，シャオグアン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2008523612A publication Critical patent/JP2008523612A/ja
Publication of JP2008523612A5 publication Critical patent/JP2008523612A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
JP2007545439A 2004-12-09 2005-08-22 多色ｌｅｄおよび関連半導体デバイス Withdrawn JP2008523612A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/009,241 US7745814B2 (en) 2004-12-09 2004-12-09 Polychromatic LED's and related semiconductor devices
PCT/US2005/029852 WO2006062560A1 (en) 2004-12-09 2005-08-22 Polychromatic led's and related semiconductor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011111294A Division JP2011187977A (ja) 2004-12-09 2011-05-18 多色ｌｅｄおよび関連半導体デバイス

Publications (2)

Publication Number Publication Date
JP2008523612A true JP2008523612A (ja) 2008-07-03
JP2008523612A5 JP2008523612A5 (enExample) 2008-10-09

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JP2007545439A Withdrawn JP2008523612A (ja) 2004-12-09 2005-08-22 多色ｌｅｄおよび関連半導体デバイス
JP2011111294A Pending JP2011187977A (ja) 2004-12-09 2011-05-18 多色ｌｅｄおよび関連半導体デバイス

Family Applications After (1)

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JP2011111294A Pending JP2011187977A (ja) 2004-12-09 2011-05-18 多色ｌｅｄおよび関連半導体デバイス

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US (2) US7745814B2 (enExample)
EP (1) EP1825526B1 (enExample)
JP (2) JP2008523612A (enExample)
KR (1) KR101180248B1 (enExample)
CN (1) CN100557830C (enExample)
AT (1) ATE411620T1 (enExample)
DE (1) DE602005010475D1 (enExample)
WO (1) WO2006062560A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
KR20090018623A (ko) * 2006-06-12 2009-02-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 재발광 반도체 구성 및 수렴 광학 요소를 갖는 ｌｅｄ 소자
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US7717599B2 (en) * 2006-07-31 2010-05-18 3M Innovative Properties Company Integrating light source module
US20080051135A1 (en) * 2006-07-31 2008-02-28 3M Innovative Properties Company Combination camera/projector system
EP2050147A2 (en) 2006-07-31 2009-04-22 3M Innovative Properties Company Led source with hollow collection lens
KR20090034369A (ko) 2006-07-31 2009-04-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 투사 서브시스템
US8075140B2 (en) * 2006-07-31 2011-12-13 3M Innovative Properties Company LED illumination system with polarization recycling
US20080036972A1 (en) * 2006-07-31 2008-02-14 3M Innovative Properties Company Led mosaic
JP2010525555A (ja) * 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
EP2160645A2 (en) 2007-05-20 2010-03-10 3M Innovative Properties Company Light recycling hollow cavity type display backlight
TWI439641B (zh) * 2007-05-20 2014-06-01 3M Innovative Properties Co 用於側面發光型背光之準直光注入器
WO2008144636A2 (en) 2007-05-20 2008-11-27 3M Innovative Properties Company Design parameters for thin hollow cavity backlights of the light-recycling type
JP2010528432A (ja) * 2007-05-20 2010-08-19 スリーエム イノベイティブ プロパティズ カンパニー カラーｌｅｄ光源を効率的に利用した白色光バックライト及び類似製品
WO2008144644A2 (en) 2007-05-20 2008-11-27 3M Innovative Properties Company Semi-specular components in hollow cavity light recycling backlights
CN101939855B (zh) * 2007-12-10 2013-10-30 3M创新有限公司 半导体发光装置及其制造方法
EP2255231A1 (en) * 2008-02-07 2010-12-01 3M Innovative Properties Company Hollow backlight with structured films
JP5792464B2 (ja) * 2008-02-22 2015-10-14 スリーエム イノベイティブ プロパティズ カンパニー 選択的出力光束分布を有するバックライト及びそれを使用した表示システム並びにバックライトの形成方法
EP2297607B1 (en) * 2008-06-04 2014-04-23 3M Innovative Properties Company Hollow backlight with tilted light source
KR20110019390A (ko) * 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
JP2011526074A (ja) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体光変換構成体
US8591052B2 (en) * 2008-10-27 2013-11-26 3M Innovative Properties Company Semispecular hollow backlight with gradient extraction
US8192048B2 (en) * 2009-04-22 2012-06-05 3M Innovative Properties Company Lighting assemblies and systems
CN102668044A (zh) * 2009-11-18 2012-09-12 3M创新有限公司 用于ii-vi族半导体的新型湿蚀刻剂及方法
WO2011153141A2 (en) * 2010-06-03 2011-12-08 3M Innovative Properties Company Light converting and emitting device with suppressed dark-line defects
US8975614B2 (en) * 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
DE102017103856A1 (de) 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102809724B1 (ko) * 2020-03-27 2025-05-21 구글 엘엘씨 변형이 감소된 인듐 갈륨 질화물 발광 다이오드
US20220181516A1 (en) * 2020-12-04 2022-06-09 Seoul Viosys Co., Ltd. Mixed color light emitting device
CN115274949A (zh) * 2022-07-22 2022-11-01 厦门士兰明镓化合物半导体有限公司 一种发光二极管及其制备方法
CN115360274A (zh) * 2022-07-22 2022-11-18 厦门士兰明镓化合物半导体有限公司 一种发光二极管及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198561A (ja) * 2000-12-27 2002-07-12 Toshiba Corp 半導体発光装置

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527179A (en) 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
FR2538171B1 (fr) 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPH06244506A (ja) 1993-02-19 1994-09-02 Sony Corp 半導体表示装置及びその製造方法
US5459337A (en) * 1993-02-19 1995-10-17 Sony Corporation Semiconductor display device with red, green and blue emission
JPH06268331A (ja) 1993-03-11 1994-09-22 Toshiba Corp 半導体発光装置
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
US5646419A (en) 1995-04-07 1997-07-08 California Institute Of Technology n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same
DE19542241C2 (de) 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JPH09181398A (ja) 1995-12-25 1997-07-11 Sony Corp 半導体発光素子
US5889295A (en) 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19703615A1 (de) 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
DE19729396A1 (de) 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
JP3559446B2 (ja) 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
EP0954034A3 (en) * 1998-04-28 2000-01-26 Canare Electric Co., Ltd. Light receiving device with quantum-wave interference layers
TW406442B (en) 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
US5988925A (en) * 1998-10-26 1999-11-23 Baggett; R. Sherman Stacked paper fastener
CN1070315C (zh) * 1998-11-06 2001-08-29 吉林大学 有机多量子阱结构白光电致发光器件
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
US6303404B1 (en) 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
WO2000076005A1 (en) 1999-06-04 2000-12-14 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
DE19952932C1 (de) 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
JP3486900B2 (ja) 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
AU2001252894A1 (en) 2000-03-06 2001-09-17 Teledyne Lighting And Display Products, Inc. Lighting apparatus having quantum dot layer
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
KR100382481B1 (ko) 2000-06-09 2003-05-01 엘지전자 주식회사 백색 발광 다이오드 소자 및 그 제조 방법
DE10036940A1 (de) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
JP2002217456A (ja) 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
US6711194B2 (en) 2001-02-08 2004-03-23 The Furukawa Electric Co., Ltd. High output power semiconductor laser diode
KR100422944B1 (ko) 2001-05-31 2004-03-12 삼성전기주식회사 반도체 엘이디(ｌｅｄ) 소자
JP3791765B2 (ja) 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6837605B2 (en) 2001-11-28 2005-01-04 Osram Opto Semiconductors Gmbh Led illumination system
US6711195B2 (en) 2002-02-28 2004-03-23 Agilent Technologies, Inc. Long-wavelength photonic device with GaAsSb quantum-well layer
US6831306B1 (en) * 2002-03-06 2004-12-14 Daktronics, Inc. Extended length light emitting diode
US6838605B2 (en) * 2002-04-15 2005-01-04 Remo, Inc. Drumshell laminate
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
JP2004047748A (ja) 2002-07-12 2004-02-12 Stanley Electric Co Ltd 発光ダイオード
JP2004072047A (ja) 2002-08-09 2004-03-04 Sumitomo Electric Ind Ltd 白色発光素子、白色発光素子用基板および白色発光素子用基板の製造方法
US6791104B2 (en) 2002-09-26 2004-09-14 Wisconsin Alumni Research Foundation Type II quantum well optoelectronic devices
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
TW591811B (en) 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP3717480B2 (ja) 2003-01-27 2005-11-16 ローム株式会社 半導体発光装置
TWI289937B (en) 2003-03-04 2007-11-11 Topco Scient Co Ltd White light LED
EP1475835A3 (en) 2003-04-14 2004-12-15 Epitech Corporation, Ltd. Color mixing light emitting diode
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP4291239B2 (ja) * 2004-09-10 2009-07-08 エルピーダメモリ株式会社 半導体記憶装置及びテスト方法
US20060081858A1 (en) * 2004-10-14 2006-04-20 Chung-Hsiang Lin Light emitting device with omnidirectional reflectors
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198561A (ja) * 2000-12-27 2002-07-12 Toshiba Corp 半導体発光装置

Also Published As

Publication number Publication date
EP1825526A1 (en) 2007-08-29
CN101076898A (zh) 2007-11-21
CN100557830C (zh) 2009-11-04
KR101180248B1 (ko) 2012-09-05
JP2011187977A (ja) 2011-09-22
WO2006062560A1 (en) 2006-06-15
US20100224889A1 (en) 2010-09-09
US20060124918A1 (en) 2006-06-15
DE602005010475D1 (de) 2008-11-27
EP1825526B1 (en) 2008-10-15
ATE411620T1 (de) 2008-10-15
US7745814B2 (en) 2010-06-29
US8148741B2 (en) 2012-04-03
KR20070089218A (ko) 2007-08-30

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