KR101180248B1 - 다색광 ｌｅｄ 및 이와 관련된 반도체 소자 - Google Patents

다색광 ｌｅｄ 및 이와 관련된 반도체 소자 Download PDF

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Publication number
KR101180248B1
KR101180248B1 KR1020077015505A KR20077015505A KR101180248B1 KR 101180248 B1 KR101180248 B1 KR 101180248B1 KR 1020077015505 A KR1020077015505 A KR 1020077015505A KR 20077015505 A KR20077015505 A KR 20077015505A KR 101180248 B1 KR101180248 B1 KR 101180248B1
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potential well
layer
semiconductor device
junction
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KR20070089218A (ko
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토마스 제이. 밀러
마이클 에이. 하스
샤오광 선
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쓰리엠 이노베이티브 프로퍼티즈 컴파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
KR1020077015505A 2004-12-09 2005-08-22 다색광 ｌｅｄ 및 이와 관련된 반도체 소자 Expired - Fee Related KR101180248B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/009,241 2004-12-09
US11/009,241 US7745814B2 (en) 2004-12-09 2004-12-09 Polychromatic LED's and related semiconductor devices
PCT/US2005/029852 WO2006062560A1 (en) 2004-12-09 2005-08-22 Polychromatic led's and related semiconductor devices

Publications (2)

Publication Number Publication Date
KR20070089218A KR20070089218A (ko) 2007-08-30
KR101180248B1 true KR101180248B1 (ko) 2012-09-05

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KR1020077015505A Expired - Fee Related KR101180248B1 (ko) 2004-12-09 2005-08-22 다색광 ｌｅｄ 및 이와 관련된 반도체 소자

Country Status (8)

Country Link
US (2) US7745814B2 (enExample)
EP (1) EP1825526B1 (enExample)
JP (2) JP2008523612A (enExample)
KR (1) KR101180248B1 (enExample)
CN (1) CN100557830C (enExample)
AT (1) ATE411620T1 (enExample)
DE (1) DE602005010475D1 (enExample)
WO (1) WO2006062560A1 (enExample)

Cited By (1)

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KR20190102293A (ko) * 2017-02-24 2019-09-03 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 칩

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US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US20080036972A1 (en) * 2006-07-31 2008-02-14 3M Innovative Properties Company Led mosaic
KR20090035562A (ko) * 2006-07-31 2009-04-09 쓰리엠 이노베이티브 프로퍼티즈 컴파니 통합형 광원 모듈
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US8523419B2 (en) 2007-05-20 2013-09-03 3M Innovative Properties Company Thin hollow backlights with beneficial design characteristics
TWI467283B (zh) 2007-05-20 2015-01-01 3M Innovative Properties Co 具有半反射鏡組件之再循環背光
WO2008147753A2 (en) * 2007-05-20 2008-12-04 3M Innovative Properties Company White light backlights and the like with efficient utilization of colored led sources
TWI439641B (zh) * 2007-05-20 2014-06-01 3M Innovative Properties Co 用於側面發光型背光之準直光注入器
CN101939855B (zh) * 2007-12-10 2013-10-30 3M创新有限公司 半导体发光装置及其制造方法
CN101939675A (zh) * 2008-02-07 2011-01-05 3M创新有限公司 具有结构化膜的中空背光源
WO2009105450A1 (en) * 2008-02-22 2009-08-27 3M Innovative Properties Company Backlights having selected output light flux distributions and display systems using same
EP2297607B1 (en) * 2008-06-04 2014-04-23 3M Innovative Properties Company Hollow backlight with tilted light source
CN102057504A (zh) * 2008-06-05 2011-05-11 3M创新有限公司 接合有半导体波长转换器的发光二极管
EP2308101A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
BRPI0914366A2 (pt) * 2008-10-27 2015-10-20 3M Innovative Properties Co ''equipamento de luz de fundo''
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JP2013511844A (ja) * 2009-11-18 2013-04-04 スリーエム イノベイティブ プロパティズ カンパニー Ｉｉ〜ｖｉ半導体のための新規なウェットエッチング剤及び方法
US9431584B2 (en) 2010-06-03 2016-08-30 3M Innovative Properties Company Light converting and emitting device with suppressed dark-line defects
US8975614B2 (en) * 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
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KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102809724B1 (ko) * 2020-03-27 2025-05-21 구글 엘엘씨 변형이 감소된 인듐 갈륨 질화물 발광 다이오드
US20220181516A1 (en) * 2020-12-04 2022-06-09 Seoul Viosys Co., Ltd. Mixed color light emitting device
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CN115274949A (zh) * 2022-07-22 2022-11-01 厦门士兰明镓化合物半导体有限公司 一种发光二极管及其制备方法

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20190102293A (ko) * 2017-02-24 2019-09-03 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 칩
KR102295678B1 (ko) 2017-02-24 2021-08-27 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 칩

Also Published As

Publication number Publication date
US20100224889A1 (en) 2010-09-09
JP2011187977A (ja) 2011-09-22
US7745814B2 (en) 2010-06-29
ATE411620T1 (de) 2008-10-15
CN100557830C (zh) 2009-11-04
EP1825526A1 (en) 2007-08-29
KR20070089218A (ko) 2007-08-30
EP1825526B1 (en) 2008-10-15
JP2008523612A (ja) 2008-07-03
CN101076898A (zh) 2007-11-21
US20060124918A1 (en) 2006-06-15
DE602005010475D1 (de) 2008-11-27
US8148741B2 (en) 2012-04-03
WO2006062560A1 (en) 2006-06-15

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