ATE411620T1 - Polychromatische leds und diesbezügliche halbleiterbauelemente - Google Patents

Polychromatische leds und diesbezügliche halbleiterbauelemente

Info

Publication number
ATE411620T1
ATE411620T1 AT05791694T AT05791694T ATE411620T1 AT E411620 T1 ATE411620 T1 AT E411620T1 AT 05791694 T AT05791694 T AT 05791694T AT 05791694 T AT05791694 T AT 05791694T AT E411620 T1 ATE411620 T1 AT E411620T1
Authority
AT
Austria
Prior art keywords
semiconductor device
junction
semiconductor components
potential well
related semiconductor
Prior art date
Application number
AT05791694T
Other languages
German (de)
English (en)
Inventor
Thomas Miller
Michael Haase
Xiaoguang Sun
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE411620T1 publication Critical patent/ATE411620T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
AT05791694T 2004-12-09 2005-08-22 Polychromatische leds und diesbezügliche halbleiterbauelemente ATE411620T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/009,241 US7745814B2 (en) 2004-12-09 2004-12-09 Polychromatic LED's and related semiconductor devices

Publications (1)

Publication Number Publication Date
ATE411620T1 true ATE411620T1 (de) 2008-10-15

Family

ID=36046862

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05791694T ATE411620T1 (de) 2004-12-09 2005-08-22 Polychromatische leds und diesbezügliche halbleiterbauelemente

Country Status (8)

Country Link
US (2) US7745814B2 (enExample)
EP (1) EP1825526B1 (enExample)
JP (2) JP2008523612A (enExample)
KR (1) KR101180248B1 (enExample)
CN (1) CN100557830C (enExample)
AT (1) ATE411620T1 (enExample)
DE (1) DE602005010475D1 (enExample)
WO (1) WO2006062560A1 (enExample)

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US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
KR20090018623A (ko) * 2006-06-12 2009-02-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 재발광 반도체 구성 및 수렴 광학 요소를 갖는 ｌｅｄ 소자
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US8075140B2 (en) * 2006-07-31 2011-12-13 3M Innovative Properties Company LED illumination system with polarization recycling
US20080036972A1 (en) * 2006-07-31 2008-02-14 3M Innovative Properties Company Led mosaic
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EP2160645A2 (en) 2007-05-20 2010-03-10 3M Innovative Properties Company Light recycling hollow cavity type display backlight
TWI439641B (zh) * 2007-05-20 2014-06-01 3M Innovative Properties Co 用於側面發光型背光之準直光注入器
WO2008144636A2 (en) 2007-05-20 2008-11-27 3M Innovative Properties Company Design parameters for thin hollow cavity backlights of the light-recycling type
JP2010528432A (ja) * 2007-05-20 2010-08-19 スリーエム イノベイティブ プロパティズ カンパニー カラーｌｅｄ光源を効率的に利用した白色光バックライト及び類似製品
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CN101939855B (zh) * 2007-12-10 2013-10-30 3M创新有限公司 半导体发光装置及其制造方法
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KR20110019390A (ko) * 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
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US8591052B2 (en) * 2008-10-27 2013-11-26 3M Innovative Properties Company Semispecular hollow backlight with gradient extraction
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CN115360274A (zh) * 2022-07-22 2022-11-18 厦门士兰明镓化合物半导体有限公司 一种发光二极管及其制备方法

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Also Published As

Publication number Publication date
EP1825526A1 (en) 2007-08-29
CN101076898A (zh) 2007-11-21
CN100557830C (zh) 2009-11-04
KR101180248B1 (ko) 2012-09-05
JP2008523612A (ja) 2008-07-03
JP2011187977A (ja) 2011-09-22
WO2006062560A1 (en) 2006-06-15
US20100224889A1 (en) 2010-09-09
US20060124918A1 (en) 2006-06-15
DE602005010475D1 (de) 2008-11-27
EP1825526B1 (en) 2008-10-15
US7745814B2 (en) 2010-06-29
US8148741B2 (en) 2012-04-03
KR20070089218A (ko) 2007-08-30

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