JP2008522193A5 - - Google Patents

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Publication number
JP2008522193A5
JP2008522193A5 JP2007544451A JP2007544451A JP2008522193A5 JP 2008522193 A5 JP2008522193 A5 JP 2008522193A5 JP 2007544451 A JP2007544451 A JP 2007544451A JP 2007544451 A JP2007544451 A JP 2007544451A JP 2008522193 A5 JP2008522193 A5 JP 2008522193A5
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JP
Japan
Prior art keywords
strain sensitive
substrate
sensitive element
extending
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007544451A
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English (en)
Japanese (ja)
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JP2008522193A (ja
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Publication date
Priority claimed from US11/000,512 external-priority patent/US6988412B1/en
Application filed filed Critical
Publication of JP2008522193A publication Critical patent/JP2008522193A/ja
Publication of JP2008522193A5 publication Critical patent/JP2008522193A5/ja
Pending legal-status Critical Current

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JP2007544451A 2004-11-30 2005-11-29 ピエゾ抵抗性歪み集中器 Pending JP2008522193A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/000,512 US6988412B1 (en) 2004-11-30 2004-11-30 Piezoresistive strain concentrator
PCT/US2005/043259 WO2006060452A2 (en) 2004-11-30 2005-11-29 Piezoresistive strain concentrator

Publications (2)

Publication Number Publication Date
JP2008522193A JP2008522193A (ja) 2008-06-26
JP2008522193A5 true JP2008522193A5 (enExample) 2009-01-29

Family

ID=35613934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007544451A Pending JP2008522193A (ja) 2004-11-30 2005-11-29 ピエゾ抵抗性歪み集中器

Country Status (7)

Country Link
US (3) US6988412B1 (enExample)
EP (1) EP1828735B1 (enExample)
JP (1) JP2008522193A (enExample)
KR (1) KR20070102502A (enExample)
CN (1) CN100578174C (enExample)
CA (1) CA2590407A1 (enExample)
WO (1) WO2006060452A2 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7455666B2 (en) 2001-07-13 2008-11-25 Board Of Regents, The University Of Texas System Methods and apparatuses for navigating the subarachnoid space
US6988412B1 (en) * 2004-11-30 2006-01-24 Endevco Corporation Piezoresistive strain concentrator
JP2006220574A (ja) * 2005-02-14 2006-08-24 Hitachi Ltd 回転体力学量測定装置および回転体力学量計測システム
JP4617943B2 (ja) * 2005-03-18 2011-01-26 株式会社日立製作所 力学量測定装置
US7124639B1 (en) * 2005-06-21 2006-10-24 Kulite Semiconductor Products, Inc. Ultra high temperature hermetically protected wirebonded piezoresistive transducer
US7621190B2 (en) * 2006-02-21 2009-11-24 Cisco Technology, Inc. Method and apparatus for strain monitoring of printed circuit board assemblies
JP2008058110A (ja) * 2006-08-30 2008-03-13 Honda Motor Co Ltd 力覚センサ用チップおよび力覚センサ
US7594440B2 (en) * 2006-10-05 2009-09-29 Endevco Corporation Highly sensitive piezoresistive element
JP5174343B2 (ja) * 2006-12-12 2013-04-03 本田技研工業株式会社 力覚センサ用チップ
KR100868758B1 (ko) * 2007-01-15 2008-11-13 삼성전기주식회사 압저항 센서를 구비한 회전형 ｍｅｍｓ 디바이스
US7987716B2 (en) * 2008-03-26 2011-08-02 Endevco Corporation Coupled pivoted acceleration sensors
US8459128B2 (en) * 2008-04-15 2013-06-11 Indian Institute Of Science Sub-threshold elastic deflection FET sensor for sensing pressure/force, a method and system thereof
WO2010082925A1 (en) * 2009-01-14 2010-07-22 Hewlett-Packard Development Company, L.P. Acoustic pressure transducer
US20110092955A1 (en) * 2009-10-07 2011-04-21 Purdy Phillip D Pressure-Sensing Medical Devices, Systems and Methods, and Methods of Forming Medical Devices
US8381596B2 (en) * 2009-12-21 2013-02-26 Silicon Microstructures, Inc. CMOS compatible pressure sensor for low pressures
JP5826192B2 (ja) 2010-02-24 2015-12-02 オークランド・ユニサービシス・リミテッド 電気コンポーネントおよび前記コンポーネントを含む回路
DE102010010931A1 (de) 2010-03-10 2011-09-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Piezoresistiver Wandler
JP5658477B2 (ja) * 2010-04-13 2015-01-28 アズビル株式会社 圧力センサ
FR2983955B1 (fr) * 2011-12-09 2014-10-03 Openfield Capteur de pression pour fluide
US8714021B2 (en) 2012-02-27 2014-05-06 Amphenol Thermometrics, Inc. Catheter die and method of fabricating the same
US8857264B2 (en) 2012-03-30 2014-10-14 Amphenol Thermometrics, Inc. Catheter die
WO2013165601A1 (en) 2012-05-03 2013-11-07 Yknots Industries Llc Moment compensated bending beam sensor for load measurement on platform supported by bending beams
TWI520215B (zh) * 2012-09-19 2016-02-01 友達光電股份有限公司 元件基板及其製造方法
US9983715B2 (en) 2012-12-17 2018-05-29 Apple Inc. Force detection in touch devices using piezoelectric sensors
WO2014149023A1 (en) 2013-03-15 2014-09-25 Rinand Solutions Llc Force sensing of inputs through strain analysis
KR101442426B1 (ko) * 2013-09-30 2014-11-03 고려대학교 산학협력단 스트레인 게이지 및 이의 제조 방법
US9581511B2 (en) * 2013-10-15 2017-02-28 Meggitt (Orange County), Inc. Microelectromechanical pressure sensors
CN110134283B (zh) 2013-10-28 2022-10-11 苹果公司 基于压电的力感测
AU2015100011B4 (en) 2014-01-13 2015-07-16 Apple Inc. Temperature compensating transparent force sensor
US10185428B2 (en) * 2014-08-14 2019-01-22 Shenzhen New Degree Technology Co., Ltd Pressure sensing structure and a touch-control apparatus
DE102015104410B4 (de) * 2015-03-24 2018-09-13 Tdk-Micronas Gmbh Drucksensor
US9612170B2 (en) 2015-07-21 2017-04-04 Apple Inc. Transparent strain sensors in an electronic device
US10055048B2 (en) 2015-07-31 2018-08-21 Apple Inc. Noise adaptive force touch
CN105241600B (zh) * 2015-08-17 2017-12-29 中国科学院地质与地球物理研究所 一种mems压力计芯片及其制造工艺
US9874965B2 (en) 2015-09-11 2018-01-23 Apple Inc. Transparent strain sensors in an electronic device
US9886118B2 (en) 2015-09-30 2018-02-06 Apple Inc. Transparent force sensitive structures in an electronic device
CN106935526B (zh) * 2015-12-31 2019-08-30 中国科学院上海微系统与信息技术研究所 用于硅通孔互连的多晶硅应力传感器结构及其制备方法
US10006820B2 (en) * 2016-03-08 2018-06-26 Apple Inc. Magnetic interference avoidance in resistive sensors
US10209830B2 (en) 2016-03-31 2019-02-19 Apple Inc. Electronic device having direction-dependent strain elements
US10133418B2 (en) 2016-09-07 2018-11-20 Apple Inc. Force sensing in an electronic device using a single layer of strain-sensitive structures
CN108267262B (zh) * 2016-12-30 2024-04-09 中国空气动力研究与发展中心超高速空气动力研究所 一种温度自补偿半导体压阻应变计
US10444091B2 (en) 2017-04-11 2019-10-15 Apple Inc. Row column architecture for strain sensing
US10309846B2 (en) 2017-07-24 2019-06-04 Apple Inc. Magnetic field cancellation for strain sensors
JP6698595B2 (ja) * 2017-08-23 2020-05-27 アズビル株式会社 トルク検出器
DE102017223831A1 (de) * 2017-12-28 2019-07-04 Hochschule Für Technik Und Wirtschaft Des Saarlandes Dehnungsstreifen umfassend ein flexibles Substrat sowie eine Widerstandsschicht und Sensorelement umfassend einen Dehnungsmessstreifen
CN108798629B (zh) * 2018-04-28 2021-09-17 中国石油天然气集团有限公司 一种用于随钻测量的电桥连接结构及扭矩测量方法
JP7077139B2 (ja) * 2018-05-23 2022-05-30 株式会社豊田中央研究所 歪ゲージの製造方法および歪ゲージ
US10782818B2 (en) 2018-08-29 2020-09-22 Apple Inc. Load cell array for detection of force input to an electronic device enclosure
KR101985946B1 (ko) * 2018-11-21 2019-06-04 호산엔지니어링(주) Msg를 이용한 로드셀 장치
US10801827B1 (en) * 2019-05-03 2020-10-13 At&T Intellectual Property I, L.P. Sensor based on smart response of two-dimensional nanomaterial and associated method
TWI696810B (zh) 2019-08-09 2020-06-21 國立中山大學 力量感測器及其感測件
US11473991B2 (en) 2019-12-29 2022-10-18 Measurement Specialties, Inc. Low-pressure sensor with stiffening ribs
EP3845873B1 (de) 2019-12-30 2023-02-15 Bizerba SE & Co. KG Regalkonsole
EP3845874B1 (de) 2019-12-30 2024-12-04 Bizerba SE & Co. KG Regal
EP3845872B1 (de) * 2019-12-30 2023-07-12 Bizerba SE & Co. KG Wägezelle
CN113282192A (zh) * 2021-05-24 2021-08-20 维沃移动通信有限公司 压感模组及电子设备
US12422314B2 (en) 2021-10-08 2025-09-23 Qorvo Us, Inc. Input structures that include slots that create a stress concentration region in a substrate for strain detection by a sensor
CN117740208B (zh) * 2023-12-20 2025-11-07 苏州大学 一种微悬臂梁触觉传感器及其制备方法
WO2025214932A1 (de) 2024-04-09 2025-10-16 Kistler Holding Ag Messdübel

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501732A (en) * 1964-05-04 1970-03-17 Endevco Corp Semiconductive piezoresistive transducer having a grooved support with electrical contacts
US3351880A (en) * 1964-05-04 1967-11-07 Endevco Corp Piezoresistive transducer
US3492513A (en) 1967-07-27 1970-01-27 Lewis E Hollander Jr Mesa t-bar piezoresistor
US4047144A (en) 1971-06-30 1977-09-06 Becton, Dickinson Electronics Company Transducer
US3995247A (en) 1975-10-22 1976-11-30 Kulite Semiconductor Products, Inc. Transducers employing gap-bridging shim members
US4093933A (en) * 1976-05-14 1978-06-06 Becton, Dickinson Electronics Company Sculptured pressure diaphragm
US4605919A (en) 1982-10-04 1986-08-12 Becton, Dickinson And Company Piezoresistive transducer
US4498229A (en) 1982-10-04 1985-02-12 Becton, Dickinson And Company Piezoresistive transducer
US4737473A (en) 1985-03-26 1988-04-12 Endevco Corporation Piezoresistive transducer
US4793194A (en) 1985-03-26 1988-12-27 Endevco Corporation Piezoresistive transducer
CN88211369U (zh) * 1988-01-22 1988-12-28 复旦大学 梁膜结构的半导体压力传感器
US5313023A (en) * 1992-04-03 1994-05-17 Weigh-Tronix, Inc. Load cell
US5425841A (en) 1993-06-16 1995-06-20 Kulite Semiconductor Products, Inc. Piezoresistive accelerometer with enhanced performance
JPH0778806A (ja) * 1993-09-08 1995-03-20 Fuji Electric Co Ltd ドライエッチング方法
JP3317084B2 (ja) 1995-03-31 2002-08-19 株式会社豊田中央研究所 力検知素子およびその製造方法
US5526700A (en) * 1995-09-29 1996-06-18 Akeel; Hadi A. Six component force gage
JP3107516B2 (ja) * 1996-05-01 2000-11-13 株式会社日立製作所 複合センサ
US6627965B1 (en) * 2000-02-08 2003-09-30 Boston Microsystems, Inc. Micromechanical device with an epitaxial layer
JP4581215B2 (ja) * 2000-10-13 2010-11-17 株式会社デンソー 薄膜センシング部を有する半導体装置の製造方法
US6915702B2 (en) 2001-11-22 2005-07-12 Kabushiki Kaisha Toyota Chuo Kenkyusho Piezoresistive transducers
CN1223832C (zh) * 2002-09-26 2005-10-19 中国科学院电子学研究所 梁膜一体结构谐振梁压力传感器芯片及制造方法
US6739199B1 (en) * 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
US6988412B1 (en) * 2004-11-30 2006-01-24 Endevco Corporation Piezoresistive strain concentrator

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