JP2008515229A - 後工程のための均一な銅相互接続部及び形成方法 - Google Patents
後工程のための均一な銅相互接続部及び形成方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Abstract
【解決手段】 不純物含有銅シード層(440)を備える相互接続部によって、後工程半導体デバイスの銅相互接続部の縁の欠陥が緩和される。不純物含有銅シード層(440)が障壁層(230)を覆い、障壁層(230)が開口部を有する絶縁層(115)を覆う。電気めっき銅が絶縁層(115)の開口部を埋める。化学的機械研磨により、障壁層(230)と、電気めっき銅浴から得られた不純物含有銅シード層(440)と、電気めっき銅とが、絶縁層(115)に平坦化される。
【選択図】 図4
Description
Claims (20)
- 銅相互接続部であって、
或る量の不純物を含有する不純物含有銅ソースから得られ、下にある絶縁層(115)の中への銅の実質的な拡散を防止する障壁層(230)の上に堆積された、不純物含有銅シード層(440)と、
或る量の不純物を含有する不純物含有銅ソースから得られ、下にある前記絶縁層(115)の開口部を埋める、不純物含有銅(350)と、
を含む銅相互接続部。 - 前記不純物含有銅シード層(440)の前記銅ソースが、前記不純物含有銅(350)の前記銅ソースに等しい、請求項1に記載の銅相互接続部。
- 前記不純物の含有量が、前記不純物含有銅シード層(440)及び前記不純物含有銅(350)の少なくとも1つの0.001重量%以上1.20重量%以下を占める、請求項1に記載の銅相互接続部。
- 堆積前に前記不純物含有銅シード層(440)中の前記不純物含有銅が前記不純物含有銅(350)に実質的に等しい、請求項1に記載の銅相互接続部。
- 前記不純物含有銅ソース中の前記銅が、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項1に記載の銅相互接続部。
- 銅相互接続部を形成する方法であって、
或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅シード層(440)を、下にある絶縁層(115)の開口部の内部を覆い、下にある前記絶縁層(115)の中への前記銅の実質的な拡散を防止する障壁層(230)の上に堆積するステップと、
前記開口部を、或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅(350)で埋めるステップと、
を含む方法。 - 前記不純物含有銅シード層(440)の前記銅シード・ソースが前記不純物含有銅(350)の前記銅シード・ソースに等しい、請求項6に記載の方法。
- 前記不純物の含有量が、前記不純物含有銅シード層(440)及び前記不純物含有銅(350)の少なくとも1つの0.001重量%以上1.20重量%以下を占める、請求項6に記載の方法。
- 前記不純物含有銅シード・ソースが、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項6に記載の方法。
- 堆積前に前記不純物含有銅シード層(440)中の前記不純物含有銅が前記不純物含有銅(350)に実質的に等しい、請求項6に記載の方法。
- 前記不純物含有銅シード層(440)が、スパッタリング、PVD、CVD、IPVD、及びALDの少なくとも1つによって堆積される、請求項6に記載の方法。
- 前記不純物含有銅シード層(440)、前記障壁層(230)及び前記不純物含有銅(350)を、前記不純物含有銅シード層(440)、前記障壁層(230)及び前記不純物含有銅(350)が前記絶縁層(115)と平坦化されるまで化学的機械研磨するステップをさらに含む、請求項6に記載の方法。
- 銅相互接続部であって、
開口部を有する絶縁層(115)と、
下にある前記絶縁層(115)上に堆積され前記開口部の内部を覆い、下にある前記絶縁層(115)の中への銅の実質的な拡散を防止する、障壁層(230)と、
或る量の不純物を含有する不純物含有銅ソースから得られ、前記障壁層(230)上に堆積され前記開口部を埋める、不純物含有銅シード(350)と、
を備えた銅相互接続部。 - 前記不純物の含有量が、前記不純物含有銅シード(350)の0.001重量%以上1.20重量%以下を占める、請求項13に記載の銅相互接続部。
- 前記不純物含有銅ソースから得られる前記不純物含有銅(350)が、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項13に記載の銅相互接続部。
- 銅相互接続部を形成する方法であって、
絶縁層(115)を堆積するステップと、
前記絶縁層(115)に開口部をエッチングするステップと、
前記絶縁層(115)への前記銅の実質的な拡散を防止する障壁層(230)を、前記開口部の内部を覆って前記絶縁層(115)内に堆積するステップと、
前記開口部を、或る量の不純物を含有する不純物含有銅シード・ソースから得られた不純物含有銅シード(350)で埋めるステップと、
を含む方法。 - 前記不純物の含有量が、前記不純物含有銅シードの0.001重量%以上1.20重量%以下を占める、請求項16に記載の方法。
- 前記不純物含有銅シード(350)及び前記障壁層(230)を、前記不純物含有銅シード(350)及び前記障壁層(230)が前記絶縁層(115)と平坦化されるまで化学的機械研磨するステップをさらに含む、請求項16に記載の方法。
- 前記不純物含有銅シード・ソースが、Ag、As、C、Cd、Cl、Co、Cr、Fe、In、Mg、Mn、N、Ni、O、Pb、S、Sn、Tl及びZnの群から選択された不純物を含有する、請求項16に記載の方法。
- 前記不純物含有銅シード(350)が、スパッタリング、PVD、CVD、IPVD、及びALDの少なくとも1つによって堆積される、請求項16に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/711,700 US20060071338A1 (en) | 2004-09-30 | 2004-09-30 | Homogeneous Copper Interconnects for BEOL |
PCT/US2005/033539 WO2006039138A1 (en) | 2004-09-30 | 2005-09-20 | Homogeneous copper interconnects for beol |
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Publication Number | Publication Date |
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JP2008515229A true JP2008515229A (ja) | 2008-05-08 |
JP2008515229A5 JP2008515229A5 (ja) | 2008-08-14 |
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JP2007534644A Pending JP2008515229A (ja) | 2004-09-30 | 2005-09-20 | 後工程のための均一な銅相互接続部及び形成方法 |
Country Status (7)
Country | Link |
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US (2) | US20060071338A1 (ja) |
EP (1) | EP1800335A4 (ja) |
JP (1) | JP2008515229A (ja) |
KR (1) | KR20070067067A (ja) |
CN (1) | CN101023514A (ja) |
TW (1) | TW200618176A (ja) |
WO (1) | WO2006039138A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014534609A (ja) * | 2011-09-14 | 2014-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属相互接続構造体およびそれを形成する方法(銅相互接続構造体における微細構造変更) |
Families Citing this family (5)
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JP5239156B2 (ja) * | 2006-12-20 | 2013-07-17 | 富士通株式会社 | 配線形成方法及び半導体装置 |
US10586732B2 (en) | 2016-06-30 | 2020-03-10 | International Business Machines Corporation | Via cleaning to reduce resistance |
US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
US11599804B2 (en) * | 2020-04-17 | 2023-03-07 | Disney Enterprises, Inc. | Automated annotation of heterogeneous content |
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JP2002009076A (ja) * | 2000-04-11 | 2002-01-11 | Agere Systems Guardian Corp | 化学・機械的研磨(cmp)中における銅のディッシングを防止するための局部領域合金化 |
JP2002075995A (ja) * | 2000-08-24 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014534609A (ja) * | 2011-09-14 | 2014-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 金属相互接続構造体およびそれを形成する方法(銅相互接続構造体における微細構造変更) |
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TW200618176A (en) | 2006-06-01 |
CN101023514A (zh) | 2007-08-22 |
US20060071338A1 (en) | 2006-04-06 |
WO2006039138A1 (en) | 2006-04-13 |
EP1800335A4 (en) | 2008-01-02 |
EP1800335A1 (en) | 2007-06-27 |
KR20070067067A (ko) | 2007-06-27 |
US20080156636A1 (en) | 2008-07-03 |
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