JP2008515210A5 - - Google Patents
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- Publication number
- JP2008515210A5 JP2008515210A5 JP2007533864A JP2007533864A JP2008515210A5 JP 2008515210 A5 JP2008515210 A5 JP 2008515210A5 JP 2007533864 A JP2007533864 A JP 2007533864A JP 2007533864 A JP2007533864 A JP 2007533864A JP 2008515210 A5 JP2008515210 A5 JP 2008515210A5
- Authority
- JP
- Japan
- Prior art keywords
- layer sequence
- contact position
- back side
- active layer
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000007769 metal material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004047392 | 2004-09-29 | ||
| DE102004061865A DE102004061865A1 (de) | 2004-09-29 | 2004-12-22 | Verfahren zur Herstellung eines Dünnfilmhalbleiterchips |
| PCT/DE2005/001684 WO2006034686A2 (de) | 2004-09-29 | 2005-09-23 | Verfahren zur herstellung eines dünnfilmhalbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008515210A JP2008515210A (ja) | 2008-05-08 |
| JP2008515210A5 true JP2008515210A5 (https=) | 2011-12-22 |
Family
ID=35457637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007533864A Pending JP2008515210A (ja) | 2004-09-29 | 2005-09-23 | 薄膜半導体チップの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20080268560A1 (https=) |
| EP (1) | EP1794816B1 (https=) |
| JP (1) | JP2008515210A (https=) |
| KR (1) | KR101249432B1 (https=) |
| DE (1) | DE102004061865A1 (https=) |
| WO (1) | WO2006034686A2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007003282B4 (de) * | 2007-01-23 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
| DE102007032283A1 (de) | 2007-07-11 | 2009-01-15 | Stein, Wilhelm, Dr. | Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung |
| WO2009010762A1 (en) * | 2007-07-19 | 2009-01-22 | Photonstar Led Limited | Vertical led with conductive vias |
| DE102008024517A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
| DE102008035900A1 (de) * | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102009054784A1 (de) * | 2009-12-16 | 2011-06-22 | Osram Gesellschaft mit beschränkter Haftung, 81543 | Halbleiterchip und Verfahren zum Herstellen eines Halbleiterchips |
| DE102010015520A1 (de) * | 2010-04-16 | 2011-10-20 | Pac Tech-Packaging Technologies Gmbh | Verfahren und Vorrichtung zur Ausbildung von Lotdepots |
| DE102010049186B4 (de) * | 2010-10-21 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| DE102016120685A1 (de) * | 2016-10-28 | 2018-05-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterlasers und Halbleiterlaser |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142160A (en) * | 1972-03-13 | 1979-02-27 | Hitachi, Ltd. | Hetero-structure injection laser |
| US4044222A (en) * | 1976-01-16 | 1977-08-23 | Western Electric Company, Inc. | Method of forming tapered apertures in thin films with an energy beam |
| US4307131A (en) * | 1976-01-30 | 1981-12-22 | Thomson-Csf | Method of manufacturing metal-semiconductor contacts exhibiting high injected current density |
| DE59814431D1 (de) * | 1997-09-29 | 2010-03-25 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
| TWI256976B (en) * | 2000-08-04 | 2006-06-21 | Hannstar Display Corp | Method of patterning an ITO layer |
| US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| DE10046170A1 (de) * | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
| US6611002B2 (en) | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| JP2002313914A (ja) * | 2001-04-18 | 2002-10-25 | Sony Corp | 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
| DE10141352A1 (de) * | 2001-08-23 | 2003-06-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Oberflächenbehandlung eines Halbleiters |
| US6784462B2 (en) | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| JP2003282478A (ja) * | 2002-01-17 | 2003-10-03 | Sony Corp | 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法 |
| TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
| DE10307280B4 (de) | 2002-11-29 | 2005-09-01 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements |
| US6929966B2 (en) * | 2002-11-29 | 2005-08-16 | Osram Opto Semiconductors Gmbh | Method for producing a light-emitting semiconductor component |
| JP2004235649A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール |
| US7122841B2 (en) * | 2003-06-04 | 2006-10-17 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting devices |
| US6913985B2 (en) * | 2003-06-20 | 2005-07-05 | Oki Data Corporation | Method of manufacturing a semiconductor device |
| FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
| US7291529B2 (en) * | 2003-11-12 | 2007-11-06 | Cree, Inc. | Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon |
| DE102004004786B4 (de) * | 2004-01-30 | 2017-06-22 | Empacher Verwaltungs Gmbh & Co. Kg | Rennzweier |
-
2004
- 2004-12-22 DE DE102004061865A patent/DE102004061865A1/de not_active Withdrawn
-
2005
- 2005-09-23 US US11/576,343 patent/US20080268560A1/en not_active Abandoned
- 2005-09-23 JP JP2007533864A patent/JP2008515210A/ja active Pending
- 2005-09-23 KR KR1020077009684A patent/KR101249432B1/ko not_active Expired - Fee Related
- 2005-09-23 EP EP05791446.7A patent/EP1794816B1/de not_active Ceased
- 2005-09-23 WO PCT/DE2005/001684 patent/WO2006034686A2/de not_active Ceased
-
2011
- 2011-09-16 US US13/234,599 patent/US20120070925A1/en not_active Abandoned
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