JP2008515210A - 薄膜半導体チップの製造方法 - Google Patents

薄膜半導体チップの製造方法 Download PDF

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Publication number
JP2008515210A
JP2008515210A JP2007533864A JP2007533864A JP2008515210A JP 2008515210 A JP2008515210 A JP 2008515210A JP 2007533864 A JP2007533864 A JP 2007533864A JP 2007533864 A JP2007533864 A JP 2007533864A JP 2008515210 A JP2008515210 A JP 2008515210A
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JP
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Prior art keywords
layer sequence
active layer
growth substrate
iii
forming
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Pending
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JP2007533864A
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Japanese (ja)
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JP2008515210A5 (https=
Inventor
プレスル アンドレアス
シュタイン ヴィルヘルム
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2008515210A publication Critical patent/JP2008515210A/ja
Publication of JP2008515210A5 publication Critical patent/JP2008515210A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
JP2007533864A 2004-09-29 2005-09-23 薄膜半導体チップの製造方法 Pending JP2008515210A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102004047392 2004-09-29
DE102004061865A DE102004061865A1 (de) 2004-09-29 2004-12-22 Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
PCT/DE2005/001684 WO2006034686A2 (de) 2004-09-29 2005-09-23 Verfahren zur herstellung eines dünnfilmhalbleiterchips

Publications (2)

Publication Number Publication Date
JP2008515210A true JP2008515210A (ja) 2008-05-08
JP2008515210A5 JP2008515210A5 (https=) 2011-12-22

Family

ID=35457637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007533864A Pending JP2008515210A (ja) 2004-09-29 2005-09-23 薄膜半導体チップの製造方法

Country Status (6)

Country Link
US (2) US20080268560A1 (https=)
EP (1) EP1794816B1 (https=)
JP (1) JP2008515210A (https=)
KR (1) KR101249432B1 (https=)
DE (1) DE102004061865A1 (https=)
WO (1) WO2006034686A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019525470A (ja) * 2016-10-28 2019-09-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体レーザの製造方法および半導体レーザ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007003282B4 (de) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
DE102007032283A1 (de) 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
WO2009010762A1 (en) * 2007-07-19 2009-01-22 Photonstar Led Limited Vertical led with conductive vias
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008035900A1 (de) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102009054784A1 (de) * 2009-12-16 2011-06-22 Osram Gesellschaft mit beschränkter Haftung, 81543 Halbleiterchip und Verfahren zum Herstellen eines Halbleiterchips
DE102010015520A1 (de) * 2010-04-16 2011-10-20 Pac Tech-Packaging Technologies Gmbh Verfahren und Vorrichtung zur Ausbildung von Lotdepots
DE102010049186B4 (de) * 2010-10-21 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
JP2002313914A (ja) * 2001-04-18 2002-10-25 Sony Corp 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003282478A (ja) * 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
US4307131A (en) * 1976-01-30 1981-12-22 Thomson-Csf Method of manufacturing metal-semiconductor contacts exhibiting high injected current density
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
TWI256976B (en) * 2000-08-04 2006-06-21 Hannstar Display Corp Method of patterning an ITO layer
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
DE10141352A1 (de) * 2001-08-23 2003-06-05 Osram Opto Semiconductors Gmbh Verfahren zur Oberflächenbehandlung eines Halbleiters
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
DE10307280B4 (de) 2002-11-29 2005-09-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements
US6929966B2 (en) * 2002-11-29 2005-08-16 Osram Opto Semiconductors Gmbh Method for producing a light-emitting semiconductor component
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
US7122841B2 (en) * 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US6913985B2 (en) * 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7291529B2 (en) * 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
DE102004004786B4 (de) * 2004-01-30 2017-06-22 Empacher Verwaltungs Gmbh & Co. Kg Rennzweier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
JP2002313914A (ja) * 2001-04-18 2002-10-25 Sony Corp 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003282478A (ja) * 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019525470A (ja) * 2016-10-28 2019-09-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体レーザの製造方法および半導体レーザ

Also Published As

Publication number Publication date
KR20070068435A (ko) 2007-06-29
US20080268560A1 (en) 2008-10-30
EP1794816B1 (de) 2015-11-04
EP1794816A2 (de) 2007-06-13
WO2006034686A3 (de) 2006-11-02
WO2006034686A2 (de) 2006-04-06
DE102004061865A1 (de) 2006-03-30
KR101249432B1 (ko) 2013-04-03
US20120070925A1 (en) 2012-03-22

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