KR101249432B1 - 박막 반도체 칩의 제조 방법 - Google Patents

박막 반도체 칩의 제조 방법 Download PDF

Info

Publication number
KR101249432B1
KR101249432B1 KR1020077009684A KR20077009684A KR101249432B1 KR 101249432 B1 KR101249432 B1 KR 101249432B1 KR 1020077009684 A KR1020077009684 A KR 1020077009684A KR 20077009684 A KR20077009684 A KR 20077009684A KR 101249432 B1 KR101249432 B1 KR 101249432B1
Authority
KR
South Korea
Prior art keywords
layer sequence
active layer
thin film
growth substrate
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077009684A
Other languages
English (en)
Korean (ko)
Other versions
KR20070068435A (ko
Inventor
안드레아스 플뢰슬
빌헬름 슈타인
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20070068435A publication Critical patent/KR20070068435A/ko
Application granted granted Critical
Publication of KR101249432B1 publication Critical patent/KR101249432B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections

Landscapes

  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
KR1020077009684A 2004-09-29 2005-09-23 박막 반도체 칩의 제조 방법 Expired - Fee Related KR101249432B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102004047392.7 2004-09-29
DE102004047392 2004-09-29
DE102004061865.8 2004-12-22
DE102004061865A DE102004061865A1 (de) 2004-09-29 2004-12-22 Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
PCT/DE2005/001684 WO2006034686A2 (de) 2004-09-29 2005-09-23 Verfahren zur herstellung eines dünnfilmhalbleiterchips

Publications (2)

Publication Number Publication Date
KR20070068435A KR20070068435A (ko) 2007-06-29
KR101249432B1 true KR101249432B1 (ko) 2013-04-03

Family

ID=35457637

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077009684A Expired - Fee Related KR101249432B1 (ko) 2004-09-29 2005-09-23 박막 반도체 칩의 제조 방법

Country Status (6)

Country Link
US (2) US20080268560A1 (https=)
EP (1) EP1794816B1 (https=)
JP (1) JP2008515210A (https=)
KR (1) KR101249432B1 (https=)
DE (1) DE102004061865A1 (https=)
WO (1) WO2006034686A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007003282B4 (de) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
DE102007032283A1 (de) 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
WO2009010762A1 (en) * 2007-07-19 2009-01-22 Photonstar Led Limited Vertical led with conductive vias
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008035900A1 (de) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
DE102009054784A1 (de) * 2009-12-16 2011-06-22 Osram Gesellschaft mit beschränkter Haftung, 81543 Halbleiterchip und Verfahren zum Herstellen eines Halbleiterchips
DE102010015520A1 (de) * 2010-04-16 2011-10-20 Pac Tech-Packaging Technologies Gmbh Verfahren und Vorrichtung zur Ausbildung von Lotdepots
DE102010049186B4 (de) * 2010-10-21 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102016120685A1 (de) * 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers und Halbleiterlaser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
WO2002069410A2 (en) 2001-02-23 2002-09-06 Nitronex Corporation Gallium nitride material devices including backside vias and methods of fabrication
US20030111667A1 (en) 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
DE10307280A1 (de) 2002-11-29 2004-06-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
US4307131A (en) * 1976-01-30 1981-12-22 Thomson-Csf Method of manufacturing metal-semiconductor contacts exhibiting high injected current density
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
TWI256976B (en) * 2000-08-04 2006-06-21 Hannstar Display Corp Method of patterning an ITO layer
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
JP2002313914A (ja) * 2001-04-18 2002-10-25 Sony Corp 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
DE10141352A1 (de) * 2001-08-23 2003-06-05 Osram Opto Semiconductors Gmbh Verfahren zur Oberflächenbehandlung eines Halbleiters
JP2003282478A (ja) * 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6929966B2 (en) * 2002-11-29 2005-08-16 Osram Opto Semiconductors Gmbh Method for producing a light-emitting semiconductor component
JP2004235649A (ja) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
US7122841B2 (en) * 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US6913985B2 (en) * 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7291529B2 (en) * 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
DE102004004786B4 (de) * 2004-01-30 2017-06-22 Empacher Verwaltungs Gmbh & Co. Kg Rennzweier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
WO2002069410A2 (en) 2001-02-23 2002-09-06 Nitronex Corporation Gallium nitride material devices including backside vias and methods of fabrication
US20030111667A1 (en) 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
DE10307280A1 (de) 2002-11-29 2004-06-17 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements

Also Published As

Publication number Publication date
KR20070068435A (ko) 2007-06-29
US20080268560A1 (en) 2008-10-30
EP1794816B1 (de) 2015-11-04
EP1794816A2 (de) 2007-06-13
WO2006034686A3 (de) 2006-11-02
WO2006034686A2 (de) 2006-04-06
JP2008515210A (ja) 2008-05-08
DE102004061865A1 (de) 2006-03-30
US20120070925A1 (en) 2012-03-22

Similar Documents

Publication Publication Date Title
US7666692B2 (en) Semiconductor device, its manufacture method and electronic component unit
CN101971371B (zh) 光电子半导体芯片及其制造方法
EP3459123B1 (en) Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices
US8679869B2 (en) Contact for a semiconductor light emitting device
US8367438B2 (en) Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
KR101325397B1 (ko) 반도체 웨이퍼의 측방향 절단 방법 및 광전 소자
US6888166B2 (en) Semiconductor light emitting device and its manufacture
US20060102933A1 (en) III-V Group compound semiconductor light emitting device and manufacturing method thereof
US9647174B2 (en) Optoelectronic semiconductor chip
JP2002512734A (ja) オプトエレクトロニクス半導体ダイオード及びそれを備えた装置
US20120070925A1 (en) Method for Producing a Thin-Film Semiconductor Chip
CN100459182C (zh) 发光元件
US20140342484A1 (en) Method for producing an optoelectronic semiconductor chip and corresponding optoelectronic semiconductor chip
US7435605B2 (en) Method for fabricating a component having an electrical contact region
US20170236980A1 (en) Optoelectronic Semiconductor Chip and Method for Producing the Same
CN101971372B (zh) 半导体本体和制造半导体本体的方法
CN100550444C (zh) 用于制造薄膜半导体芯片的方法以及薄膜半导体芯片
JP2001332760A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
TWI283934B (en) Method for the production of a thin-film semiconductor chip
US9076897B2 (en) Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
KR101062754B1 (ko) 반도체 발광소자

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160317

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170316

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180316

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20190314

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200327

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200327

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000