JP2008511641A5 - - Google Patents

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JP2008511641A5
JP2008511641A5 JP2007530199A JP2007530199A JP2008511641A5 JP 2008511641 A5 JP2008511641 A5 JP 2008511641A5 JP 2007530199 A JP2007530199 A JP 2007530199A JP 2007530199 A JP2007530199 A JP 2007530199A JP 2008511641 A5 JP2008511641 A5 JP 2008511641A5
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oxidation
reaction zone
reaction medium
reactor
oxidizable compound
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JP2007530199A
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JP2008511641A (ja
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Priority claimed from US11/154,480 external-priority patent/US7495125B2/en
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Claims (31)

  1. 撹拌された初期反応器中に含まれる反応媒体の液相中で被酸化性化合物を酸化させることを含んでなり、前記反応媒体が時間平均及び容積平均基準で少なくとも0.6のガス・ホールドアップを有する方法。
  2. 前記反応媒体が時間平均及び容積平均基準で少なくとも3重量%の固形分を含む請求項1に記載の方法。
  3. 前記反応器が気泡塔型反応器であり、前記反応媒体が時間平均及び容積平均基準で0.65〜0.85の範囲のガス・ホールドアップを有し、前記反応媒体が時間平均及び容積平均基準で5〜40重量%の範囲の固形分を含む請求項1に記載の方法。
  4. 前記反応媒体の1/2高さにおける前記反応媒体の気相の時間平均空塔速度が0.8〜5m/秒の範囲である請求項1に記載の方法。
  5. 前記被酸化性化合物が芳香族化合物である請求項1に記載の方法。
  6. 前記被酸化性化合物がp−キシレン、m−キシレン、p−トルアルデヒド、m−トルアルデヒド、p−トルイル酸、m−トルイル酸、アセトアルデヒド及びこれらの2種又はそれ以上の組合せからなる群から選ばれる請求項1に記載の方法。
  7. 前記被酸化性化合物がp−キシレンである請求項1に記載の方法。
  8. 前記反応媒体が三相反応媒体である請求項1に記載の方法。
  9. 前記酸化が前記反応媒体中で固体の形成を引き起こす請求項1に記載の方法。
  10. 前記酸化が前記反応媒体中で前記被酸化性化合物の少なくとも10重量%に固体を形成させる請求項1に記載の方法。
  11. 前記初期反応器が気泡塔型反応器である請求項1に記載の方法。
  12. 前記被酸化性化合物がp−キシレンを含む請求項11に記載の方法。
  13. 前記酸化を、コバルトを含む触媒系の存在下で、実施する請求項1に記載の方法。
  14. 前記触媒系が臭素及びマンガンを更に含む請求項13に記載の方法。
  15. 前記反応媒体が最大高さ(H)、最大幅(W)及び少なくとも3:1のH:W比を有する請求項1に記載の方法。
  16. 前記H:W比が8:1〜20:1の範囲である請求項15に記載の方法。
  17. 前記方法が、分子状酸素を含む、主に気相の酸化剤流を前記反応ゾーン中に導入することを更に含む請求項15に記載の方法。
  18. 前記酸化剤流が50モル%未満の分子状酸素を含む請求項17に記載の方法。
  19. 前記分子状酸素の大部分が、前記反応ゾーンの底部の0.25W以内において、前記反応ゾーンに入る請求項17に記載の方法。
  20. 前記分子状酸素の大部分が、前記反応ゾーンの底部の0.025H以内において、前記反応ゾーンに入る請求項17に記載の方法。
  21. 前記方法が、前記被酸化性化合物を含む、主に液相の供給流を前記反応ゾーン中に導入することを更に含む請求項17に記載の方法。
  22. 前記初期反応器が気泡塔型反応器である請求項21に記載の方法。
  23. 前記被酸化性化合物の少なくとも50重量%が、前記分子状酸素が前記反応ゾーンに入る最低位置の2.5W以内において、前記反応ゾーンに入る請求項21に記載の方法。
  24. 前記供給流を、複数の供給材料用開口部を経て前記反応ゾーンに導入し、前記供給材料用開口部の少なくとも2つを、互いに垂直方向に少なくとも0.5Wの間隔をあけて配置する請求項21に記載の方法。
  25. 前記供給材料用開口部の少なくとも2つを、互いに垂直方向に少なくとも1.5Wの間隔をあけて配置する請求項24に記載の方法。
  26. 前記供給流を、前記反応ゾーンを1対の交差垂直面によって等容積の4つの垂直クアドラント(quadrant)に理論的に分割する場合に前記被酸化性化合物の80重量%以下が前記垂直クアドラントの単一のクアドラントにおいて前記反応ゾーンに入るように、前記反応ゾーン中に導入する請求項21に記載の方法。
  27. 前記反応ゾーンの少なくとも一部分を前記反応器の1つ又はそれ以上の直立側壁によって規定し、前記被酸化性化合物の少なくとも25重量%が、前記直立側壁から内側に少なくとも0.05Dの間隔をあけて配置された1つ又はそれ以上の位置において前記反応ゾーンに入り、前記反応ゾーンが最大直径(D)を有する請求項21に記載の方法。
  28. 前記初期反応器中における前記酸化が前記反応媒体中でテレフタル酸の形成を引き起こし、前記方法が、前記テレフタル酸の少なくとも一部を二次酸化反応中における酸化に供することを更に含む請求項1に記載の方法。
  29. 前記二次酸化反応器中における前記酸化を、前記初期反応器中における前記酸化よりも少なくとも10℃高い平均温度において実施する請求項28に記載の方法。
  30. 前記二次酸化反応器中における前記酸化を、前記初期反応器の平均温度より20〜80℃高い範囲の平均温度において実施し、前記初期反応器中における前記酸化を140〜180℃の範囲の平均温度において実施し、前記二次酸化反応器中における前記酸化を180〜220℃の範囲の平均温度において実施する請求項28に記載の方法。
  31. 前記酸化が前記反応媒体中において粗製テレフタル酸粒子の形成を引き起こし、前記粗製テレフタル酸粒子の代表的なサンプルが以下の特性:
    (i)12ppmw未満の4,4−ジカルボキシスチルベン(4,4−DCS)を含み、
    (ii)800ppmw未満のイソフタル酸(IPA)を含み、
    (iii)100ppmw未満の2,6−ジカルボキシフルオレノン(2,6−DCF)を含み、
    (iv)340nmにおけるパーセント透過率(%T340)が25より高い
    の1つ又はそれ以上を有する請求項1に記載の方法。
JP2007530199A 2004-09-02 2005-08-29 最適化液相酸化 Pending JP2008511641A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US60673204P 2004-09-02 2004-09-02
US63151904P 2004-11-29 2004-11-29
US11/154,480 US7495125B2 (en) 2004-09-02 2005-06-16 Optimized liquid-phase oxidation
PCT/US2005/030549 WO2006028755A1 (en) 2004-09-02 2005-08-29 Optimized liquid-phase oxidation

Publications (2)

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JP2008511641A JP2008511641A (ja) 2008-04-17
JP2008511641A5 true JP2008511641A5 (ja) 2008-10-16

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US (1) US7495125B2 (ja)
EP (1) EP1786745A1 (ja)
JP (1) JP2008511641A (ja)
KR (1) KR20070057196A (ja)
BR (1) BRPI0514784A (ja)
CA (1) CA2577055A1 (ja)
MX (1) MX2007002507A (ja)
WO (1) WO2006028755A1 (ja)

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