JP2008504681A5 - - Google Patents

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Publication number
JP2008504681A5
JP2008504681A5 JP2007518064A JP2007518064A JP2008504681A5 JP 2008504681 A5 JP2008504681 A5 JP 2008504681A5 JP 2007518064 A JP2007518064 A JP 2007518064A JP 2007518064 A JP2007518064 A JP 2007518064A JP 2008504681 A5 JP2008504681 A5 JP 2008504681A5
Authority
JP
Japan
Prior art keywords
region
charge storage
semiconductor device
forming
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007518064A
Other languages
English (en)
Japanese (ja)
Other versions
JP4901729B2 (ja
JP2008504681A (ja
Filing date
Publication date
Priority claimed from US10/876,805 external-priority patent/US7091089B2/en
Application filed filed Critical
Publication of JP2008504681A publication Critical patent/JP2008504681A/ja
Publication of JP2008504681A5 publication Critical patent/JP2008504681A5/ja
Application granted granted Critical
Publication of JP4901729B2 publication Critical patent/JP4901729B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007518064A 2004-06-25 2005-05-11 ナノクラスタ電荷蓄積デバイスの形成方法 Expired - Fee Related JP4901729B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/876,805 US7091089B2 (en) 2004-06-25 2004-06-25 Method of forming a nanocluster charge storage device
US10/876,805 2004-06-25
PCT/US2005/016495 WO2006007080A2 (en) 2004-06-25 2005-05-11 Method of forming a nanocluster charge storage device

Publications (3)

Publication Number Publication Date
JP2008504681A JP2008504681A (ja) 2008-02-14
JP2008504681A5 true JP2008504681A5 (enExample) 2008-06-26
JP4901729B2 JP4901729B2 (ja) 2012-03-21

Family

ID=35506402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007518064A Expired - Fee Related JP4901729B2 (ja) 2004-06-25 2005-05-11 ナノクラスタ電荷蓄積デバイスの形成方法

Country Status (5)

Country Link
US (1) US7091089B2 (enExample)
JP (1) JP4901729B2 (enExample)
CN (1) CN100524657C (enExample)
TW (1) TWI396238B (enExample)
WO (1) WO2006007080A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361543B2 (en) * 2004-11-12 2008-04-22 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7183159B2 (en) * 2005-01-14 2007-02-27 Freescale Semiconductor, Inc. Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices
US20060199335A1 (en) * 2005-03-04 2006-09-07 Freescale Semiconductor, Inc. Electronic devices including non-volatile memory structures and processes for forming the same
JP2006319294A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の高電圧用ゲート酸化膜形成方法及び半導体素子の高電圧用トランジスタ
US7445984B2 (en) 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7432158B1 (en) 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
US7816211B2 (en) * 2007-01-26 2010-10-19 Freescale Semiconductor, Inc. Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistors
US8614124B2 (en) 2007-05-25 2013-12-24 Cypress Semiconductor Corporation SONOS ONO stack scaling
US9299568B2 (en) 2007-05-25 2016-03-29 Cypress Semiconductor Corporation SONOS ONO stack scaling
US9431549B2 (en) 2007-12-12 2016-08-30 Cypress Semiconductor Corporation Nonvolatile charge trap memory device having a high dielectric constant blocking region
US7871886B2 (en) 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US9102522B2 (en) 2009-04-24 2015-08-11 Cypress Semiconductor Corporation Method of ONO integration into logic CMOS flow
US8071453B1 (en) 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
US8383479B2 (en) 2009-07-21 2013-02-26 Sandisk Technologies Inc. Integrated nanostructure-based non-volatile memory fabrication
CN102456629A (zh) * 2010-10-19 2012-05-16 上海宏力半导体制造有限公司 存储器件的形成方法
US9230977B2 (en) 2013-06-21 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded flash memory device with floating gate embedded in a substrate
US8883624B1 (en) 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
KR102258369B1 (ko) * 2014-06-23 2021-05-31 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
TW201825384A (zh) * 2016-08-22 2018-07-16 國立研究開發法人科學技術振興機構 記憶組件
US20230335582A1 (en) * 2022-04-13 2023-10-19 Micron Technology, Inc. Memory device isolation structure and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
US6339002B1 (en) 1999-02-10 2002-01-15 International Business Machines Corporation Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
KR100357692B1 (ko) * 2000-10-27 2002-10-25 삼성전자 주식회사 비휘발성 메모리소자 및 그 제조방법
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
JP4713752B2 (ja) * 2000-12-28 2011-06-29 財団法人国際科学振興財団 半導体装置およびその製造方法
TW546840B (en) * 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
US6580132B1 (en) 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET
JP2003309182A (ja) * 2002-04-17 2003-10-31 Hitachi Ltd 半導体装置の製造方法及び半導体装置
US7189606B2 (en) 2002-06-05 2007-03-13 Micron Technology, Inc. Method of forming fully-depleted (FD) SOI MOSFET access transistor
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP4477886B2 (ja) * 2003-04-28 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
US6958265B2 (en) * 2003-09-16 2005-10-25 Freescale Semiconductor, Inc. Semiconductor device with nanoclusters

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