JP2008502680A - 銅薄膜の堆積前駆体として有用な銅（ｉ）化合物 - Google Patents

銅薄膜の堆積前駆体として有用な銅（ｉ）化合物 Download PDF

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JP2008502680A
JP2008502680A JP2007516461A JP2007516461A JP2008502680A JP 2008502680 A JP2008502680 A JP 2008502680A JP 2007516461 A JP2007516461 A JP 2007516461A JP 2007516461 A JP2007516461 A JP 2007516461A JP 2008502680 A JP2008502680 A JP 2008502680A
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copper
group
aryl
precursor
alkyl
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JP2008502680A5 (US07371880-20080513-C00015.png
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スー，チョンユィン
ブロビック，アレキサンダー
バウム，トーマス，エイチ．
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アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
JP2007516461A 2004-06-16 2005-03-14 銅薄膜の堆積前駆体として有用な銅（ｉ）化合物 Pending JP2008502680A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/869,532 US7166732B2 (en) 2004-06-16 2004-06-16 Copper (I) compounds useful as deposition precursors of copper thin films
PCT/US2005/008416 WO2006009590A1 (en) 2004-06-16 2005-03-14 Copper (i) compounds useful as deposition precursors of copper thin films

Publications (2)

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JP2008502680A true JP2008502680A (ja) 2008-01-31
JP2008502680A5 JP2008502680A5 (US07371880-20080513-C00015.png) 2008-05-08

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JP2007516461A Pending JP2008502680A (ja) 2004-06-16 2005-03-14 銅薄膜の堆積前駆体として有用な銅（ｉ）化合物

Country Status (8)

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US (5) US7166732B2 (US07371880-20080513-C00015.png)
EP (1) EP1765834A4 (US07371880-20080513-C00015.png)
JP (1) JP2008502680A (US07371880-20080513-C00015.png)
KR (2) KR20120105057A (US07371880-20080513-C00015.png)
CN (1) CN101084229A (US07371880-20080513-C00015.png)
IL (1) IL180072A0 (US07371880-20080513-C00015.png)
TW (1) TWI397531B (US07371880-20080513-C00015.png)
WO (1) WO2006009590A1 (US07371880-20080513-C00015.png)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
JP2010524264A (ja) * 2007-04-09 2010-07-15 プレジデント アンド フェロウズ オブ ハーバード カレッジ 銅の相互接続体のための窒化コバルト層及びそれらを形成する方法
WO2015079914A1 (ja) * 2013-11-29 2015-06-04 気相成長株式会社 銅系膜形成方法、銅系膜形成材料
WO2018088079A1 (ja) * 2016-11-08 2018-05-17 株式会社Adeka 化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物

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US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
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KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
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CN106498361B (zh) * 2016-11-22 2019-03-19 江南大学 一种以肼类为还原剂单原子层沉积技术生长金属Cu的方法
TWI773839B (zh) 2017-10-14 2022-08-11 美商應用材料股份有限公司 用於beol 互連的ald 銅與高溫pvd 銅沉積的集成

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US7371880B2 (en) 2008-05-13
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US7531031B2 (en) 2009-05-12
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US20070116876A1 (en) 2007-05-24
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