JP2008277512A - 撮像素子及び光電変換素子アレイ - Google Patents
撮像素子及び光電変換素子アレイ Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 230000003287 optical effect Effects 0.000 claims abstract description 102
- 238000003384 imaging method Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 82
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Chemical group 0.000 description 1
- 239000010432 diamond Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
【解決手段】光学素子基板部1の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、光学素子基板部1の他方の面側から読み出して撮像を行う撮像素子10及び光電変換素子アレイであって、入射光を光電変換することで信号電荷を生じせしめるため、光学素子基板部1に形成された光電変換層と、光学素子基板部1の他方の面側に、光電変換層で生成された信号電荷を転送可能に接合されたCMOS回路基板部2とを備えている。
【選択図】図1
Description
なお、従来のCMOS型のイメージセンナとしては、下記特許文献に示すものがある。
(1)周辺回路の高機能化による多層配線の導入と、カラーフィルタ工程やマイクロレンズ工程の整合性が悪いため、光学特性がCCD型イメージセンサに比べて劣っている。
(2)周辺回路の規模が大きくなると、センサー部の画像欠陥のために不良となる周辺回路の損失によってコストが増加してしまう。
(3)画素を微細化した場合に、入射光をシリコン基板表面まで導く光路を波長に対して一定の比率の大きさに維持する必要があり、画素でのフォトダイオード占有率が増加することによって、微細化、高機能化を図る点で不利である。
(1)光学素子基板部の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、前記光学素子基板部の他方の面側から読み出して撮像を行う撮像素子であって、
入射光を光電変換することで信号電荷を生じせしめるため、前記光学素子基板部に形成された光電変換層と、
前記光学素子基板部の前記他方の面側に、前記光電変換層で生成された信号電荷を転送可能に接合されたCMOS回路基板部とを備えていることを特徴とする撮像素子。
(2)前記光学素子基板部の画素ごとに前記光電変換層に接続された素子側接続端子と、
前記CMOS回路基板部における前記光学素子基板部と接合する側の面に形成された回路側接続端子とを有し、前記光学素子基板部の前記他方の面で前記素子側接続端子と前記回路側接続端子とが互いに接続していることを特徴とする上記(1)に記載の撮像素子。
(3)前記光電変換層の空乏層の厚さが5μm以上20μm以下であることを特徴とする上記(1)又は(2)に記載の撮像素子。
(4)前記接続端子がマイクロバンプを備えていることを特徴とする上記(1)から(3)のいずれか1つに記載の撮像素子。
(5)前記光学素子基板部の前記一方の面にカラーフィルタ層が形成されていることを特徴とする上記(1)から(4)のいずれか1つに記載の撮像素子。
(6)前記カラーフィルタ層上にマイクロレンズ層が形成されていることを特徴とする上記(1)から(5)のいずれか1つに記載の撮像素子。
(7)前記光学素子基板部の前記一方の面側に、前記CMOS回路基板部に前記光学素子基板部を接合する際に、該光学素子基板部を支持するための透明な支持基板を備えていることを特徴とする上記(1)から(5)のいずれか1つに記載の撮像素子。
(8)前記光学素子基板部の前記一方の面側に、前記CMOS回路基板部に前記光学素子基板部を接合する際に、該光学素子基板部を支持するための透明な支持基板と、前記支持基板と前記光学素子基板部とを接合するため、前記マイクロレンズ層より屈折率が小さい接着層とを備えていることを特徴とする上記(6)に記載の撮像素子。
(9)光学素子基板部の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、前記光学素子基板部の他方の面側から読み出して撮像を行う光電変換素子アレイであって、
入射光を光電変換することで信号電荷を生じせしめるため、前記光学素子基板に形成された光電変換層と、
前記光学素子基板の前記他方の面側に、前記光電変換層で生成された信号電荷を転送するための接続端子とを備えていることを特徴とする光電変換素子アレイ。
従来のCMOS型撮像素子のように、半導体基板上に回路部と光学素子部とを順次に製造する工程に比べ、回路部と光学素子部のいずれか一方の歩留まりの低下に影響を受けて撮像素子自体の歩留まりが低下してしまうことを回避することができ、既に製造された光学素子基板部とCMOS回路基板部とを接合することで、撮像素子の製造効率を向上させることができる。
また、CMOS回路基板部には光学素子部を形成する必要が無いため、製造工程に要する時間を短縮することができるとともに、CMOS回路基板部における回路設計の自由度が高く、設計効率を向上させることができる。
図1は、本発明にかかる撮像素子の構成を示す断面図である。本発明にかかる撮像素子10は、光学素子基板部1と、光学素子基板部1の光が入射する側とは反対側に接合されたCMOS回路基板部2とで構成される。撮像素子10は、光学素子基板部1の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、光学素子基板部の他方の面側から読み出して撮像を行うものである。なお、本実施形態では、図1に示すように光学素子基板部1の上側から光が入射させて、信号電荷を光学素子基板部1の下側から読み出す構成である。
図2は、光学素子基板部とCMOS回路側基板部とを接合する状態を説明する図である。なお、以下に説明する実施形態において、すでに説明した部材などと同等な構成・作用を有する部材等については、図中に同一符号又は相当符号を付すことにより、説明を簡略化或いは省略する。
従来のCMOS型撮像素子のように、半導体基板上に回路部と光学素子部とを順次に製造する工程に比べ、回路部と光学素子部のいずれか一方の歩留まりの低下に影響を受けて撮像素子自体の歩留まりが低下してしまうことを回避することができ、既に製造された光学素子基板部1とCMOS回路基板部2とを接合することによって、撮像素子10の製造効率を向上させることができる。
また、CMOS回路基板部2には光学素子部を形成する必要が無いため、製造工程に要する時間を短縮することができるとともに、CMOS回路基板部2における回路設計の自由度が高く、設計効率を向上させることができる。
2 CMOS回路基板部
10 撮像素子
24,33 マイクロバンプ
Claims (9)
- 光学素子基板部の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、前記光学素子基板部の他方の面側から読み出して撮像を行う撮像素子であって、
入射光を光電変換することで信号電荷を生じせしめるため、前記光学素子基板部に形成された光電変換層と、
前記光学素子基板部の前記他方の面側に、前記光電変換層で生成された信号電荷を転送可能に接合されたCMOS回路基板部とを備えていることを特徴とする撮像素子。 - 前記光学素子基板部の画素ごとに前記光電変換層に接続された素子側接続端子と、
前記CMOS回路基板部における前記光学素子基板部と接合する側の面に形成された回路側接続端子とを有し、前記光学素子基板部の前記他方の面で前記素子側接続端子と前記回路側接続端子とが互いに接続していることを特徴とする請求項1に記載の撮像素子。 - 前記光電変換層の空乏層の厚さが5μm以上20μm以下であることを特徴とする請求項1又は2に記載の撮像素子。
- 前記接続端子がマイクロバンプを備えていることを特徴とする請求項1から3のいずれか1つに記載の撮像素子。
- 前記光学素子基板部の前記一方の面にカラーフィルタ層が形成されていることを特徴とする請求項1から4のいずれか1つに記載の撮像素子。
- 前記カラーフィルタ層上にマイクロレンズ層が形成されていることを特徴とする請求項1から5のいずれか1つに記載の撮像素子。
- 前記光学素子基板部の前記一方の面側に、前記CMOS回路基板部に前記光学素子基板部を接合する際に、該光学素子基板部を支持するための透明な支持基板を備えていることを特徴とする請求項1から5のいずれか1つに記載の撮像素子。
- 前記光学素子基板部の前記一方の面側に、前記CMOS回路基板部に前記光学素子基板部を接合する際に、該光学素子基板部を支持するための透明な支持基板と、前記支持基板と前記光学素子基板部とを接合するため、前記マイクロレンズ層より屈折率が小さい接着層とを備えていることを特徴とする請求項6に記載の撮像素子。
- 光学素子基板部の一方の面側から照射される入射光を光電変換することで信号電荷を発生させて、前記光学素子基板の他方の面側から読み出して撮像を行う光電変換素子アレイであって、
入射光を光電変換することで信号電荷を生じせしめるため、前記光学素子基板に形成された光電変換層と、
前記光学素子基板の前記他方の面側に、前記光電変換層で生成された信号電荷を転送するための接続端子とを備えていることを特徴とする光電変換素子アレイ。
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JP2007118828A JP2008277512A (ja) | 2007-04-27 | 2007-04-27 | 撮像素子及び光電変換素子アレイ |
US12/103,809 US7723663B2 (en) | 2007-04-27 | 2008-04-16 | CMOS image pick-up with integrated optical and electronic elements and micro bump connectors |
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JP2012124318A (ja) * | 2010-12-08 | 2012-06-28 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、および電子機器 |
WO2013191039A1 (ja) * | 2012-06-22 | 2013-12-27 | ソニー株式会社 | 半導体装置、半導体装置の製造方法及び電子機器 |
WO2022158309A1 (ja) * | 2021-01-20 | 2022-07-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
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JP2008277511A (ja) * | 2007-04-27 | 2008-11-13 | Fujifilm Corp | 撮像素子及び撮像装置 |
JP2011009645A (ja) * | 2009-06-29 | 2011-01-13 | Toshiba Corp | 半導体装置及びその製造方法 |
CN105938825B (zh) | 2011-05-24 | 2019-04-05 | 索尼公司 | 半导体图像接收装置 |
WO2016185883A1 (ja) * | 2015-05-18 | 2016-11-24 | ソニー株式会社 | 半導体装置および撮像装置 |
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