JP2008270529A - 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 - Google Patents
半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 Download PDFInfo
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- JP2008270529A JP2008270529A JP2007111617A JP2007111617A JP2008270529A JP 2008270529 A JP2008270529 A JP 2008270529A JP 2007111617 A JP2007111617 A JP 2007111617A JP 2007111617 A JP2007111617 A JP 2007111617A JP 2008270529 A JP2008270529 A JP 2008270529A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 230000005684 electric field Effects 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
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- 230000001681 protective effect Effects 0.000 description 7
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- 238000005530 etching Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
【解決手段】半導体基板上101に第1の導電型の半導体結晶層と第2の導電型の半導体結晶層とからなるpn接合を含む複数の半導体結晶層からなり、且つ上部に第1のコンタクト層108を含むメサ110が形成され、pn接合に電界を印加する複数の電極が接続され、メサを埋め込む埋め込み層111上に第2のコンタクト層108aを形成し、第2のコンタクト層108aと第1のコンタクト層108とを介してpn接合に電界を印加する半導体受光装置により、達成できる。
【選択図】図1
Description
また、特許文献2は、電界調整層を有するAPDの基本的な技術を開示している。
図1を参照して、裏面入射型APDの構造および製造プロセスを説明する。なお、図1および後述する図3は、主要部の完成断面図であるが、当業者が参照すればその製造プロセスを理解可能である。
図3を参照して説明した表面入射型APD200Aも図2の光受信モジュールとすることで、容量が小さく、低入力インピーダンスのプリアンプとの組み合わせが可能となり、優れた高周波応答特性を実現できる。また、光軸調芯がしやすく、2.5Gbit/s以上の高速用途で安価・製造歩留りの高いモジュールを得ることが可能である。
Claims (6)
- 半導体基板上に第1の導電型の半導体結晶層と第2の導電型の半導体結晶層とからなるpn接合を含む複数の半導体結晶層からなり、且つ上部に第1のコンタクト層を含むメサが形成され、前記pn接合に電界を印加する複数の電極が接続された半導体受光装置において、
前記メサを埋め込む埋め込み層上に第2のコンタクト層を形成し、該第2のコンタクト層と前記第1のコンタクト層とを介して前記pn接合に電界を印加することを特徴とする半導体受光装置。 - 半導体基板上に第1の導電型の半導体結晶層と第2の導電型の半導体結晶層とからなるpn接合を含む複数の半導体結晶層からなるメサが形成され、前記pn接合に電界を印加するメサ側電極と基板側電極とが接続された半導体受光装置において、
前記メサ側電極部のコンタクト部は、リング形状であり、その内径は、前記メサの外形より大または同じであることを特徴とする半導体受光装置。 - 請求項2に記載の半導体受光装置であって、
前記メサ側電極部はリング形状であり、その内側に表面から入射された光を透過する反射防止部を有することを特徴とする半導体受光装置。 - 請求項2に記載の半導体受光装置であって、
前記メサ側電極は、裏面から入射された光を反射する鏡を有することを特徴とする半導体受光装置。 - 請求項1または請求項2に記載の半導体受光装置と、電流入力を電圧出力に変換する負帰還アンプと、からなることを特徴とする光受信モジュール。
- 半導体基板上に第1の導電型の半導体結晶層と第2の導電型の半導体結晶層とからなるpn接合を含む複数の半導体結晶層からなり、且つ上部に第1のコンタクト層を含むメサを形成するステップと、
前記メサを埋め込む埋め込み層を形成するステップと、
前記埋め込み層の上に前記第1のコンタクト層と接続された第2のコンタクト層を形成するステップと、
前記第2のコンタクト層に接続された電極層を形成するステップとからなる半導体受光装置の製造方法。
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JP2007111617A JP4861887B2 (ja) | 2007-04-20 | 2007-04-20 | 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 |
US12/081,385 US7875905B2 (en) | 2007-04-20 | 2008-04-15 | Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device |
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JP2007111617A JP4861887B2 (ja) | 2007-04-20 | 2007-04-20 | 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 |
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JP4861887B2 JP4861887B2 (ja) | 2012-01-25 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011210866A (ja) * | 2010-03-29 | 2011-10-20 | Opnext Japan Inc | 半導体受光素子及びその製造方法 |
JP2014003083A (ja) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | フォトダイオードアレイ |
WO2014046465A1 (ko) * | 2012-09-21 | 2014-03-27 | 한국전자통신연구원 | 포토믹서 및 그의 제조방법 |
US10230008B2 (en) | 2015-02-18 | 2019-03-12 | Oclaro Japan, Inc. | Semiconductor light receiving device, optical receiver module and manufacturing method thereof |
US11118970B2 (en) | 2017-11-24 | 2021-09-14 | Hamamatsu Photonics K.K. | Optical detection circuit comprising an optical detector to generate voltage between an anode and a cathode due to photoelectromotive force generated in accordance with incident light quantity |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338317B2 (en) * | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
FR2992472B1 (fr) * | 2012-06-20 | 2014-08-08 | Commissariat Energie Atomique | Recepteur optique semi-conducteur a structure pin |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS611064A (ja) * | 1984-05-31 | 1986-01-07 | Fujitsu Ltd | 半導体受光装置 |
JPS6231179A (ja) * | 1985-08-02 | 1987-02-10 | Fujitsu Ltd | 半導体受光素子の製造方法 |
JPH08242016A (ja) * | 1995-02-16 | 1996-09-17 | Hewlett Packard Co <Hp> | フォトダイオードの製造方法 |
JPH10308527A (ja) * | 1997-04-01 | 1998-11-17 | Hewlett Packard Co <Hp> | 半導体光検出器 |
JP2004179404A (ja) * | 2002-11-27 | 2004-06-24 | Opnext Japan Inc | 半導体受光装置およびその製造方法 |
Family Cites Families (2)
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JPH0750807B2 (ja) * | 1984-03-28 | 1995-05-31 | 東北大学長 | 接合型半導体発光素子 |
JP4220688B2 (ja) | 2001-02-26 | 2009-02-04 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS611064A (ja) * | 1984-05-31 | 1986-01-07 | Fujitsu Ltd | 半導体受光装置 |
JPS6231179A (ja) * | 1985-08-02 | 1987-02-10 | Fujitsu Ltd | 半導体受光素子の製造方法 |
JPH08242016A (ja) * | 1995-02-16 | 1996-09-17 | Hewlett Packard Co <Hp> | フォトダイオードの製造方法 |
JPH10308527A (ja) * | 1997-04-01 | 1998-11-17 | Hewlett Packard Co <Hp> | 半導体光検出器 |
JP2004179404A (ja) * | 2002-11-27 | 2004-06-24 | Opnext Japan Inc | 半導体受光装置およびその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011210866A (ja) * | 2010-03-29 | 2011-10-20 | Opnext Japan Inc | 半導体受光素子及びその製造方法 |
US9029970B2 (en) | 2010-03-29 | 2015-05-12 | Oclaro Japan, Inc. | Semiconductor light receiving device and method of manufacturing the same |
JP2014003083A (ja) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | フォトダイオードアレイ |
WO2014046465A1 (ko) * | 2012-09-21 | 2014-03-27 | 한국전자통신연구원 | 포토믹서 및 그의 제조방법 |
US9618823B2 (en) | 2012-09-21 | 2017-04-11 | Electronics And Telecommunications Research Institute | Photo mixer and method for manufacturing same |
US10230008B2 (en) | 2015-02-18 | 2019-03-12 | Oclaro Japan, Inc. | Semiconductor light receiving device, optical receiver module and manufacturing method thereof |
US11118970B2 (en) | 2017-11-24 | 2021-09-14 | Hamamatsu Photonics K.K. | Optical detection circuit comprising an optical detector to generate voltage between an anode and a cathode due to photoelectromotive force generated in accordance with incident light quantity |
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US7875905B2 (en) | 2011-01-25 |
JP4861887B2 (ja) | 2012-01-25 |
US20080265357A1 (en) | 2008-10-30 |
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