JP2008218878A5 - - Google Patents
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- JP2008218878A5 JP2008218878A5 JP2007057110A JP2007057110A JP2008218878A5 JP 2008218878 A5 JP2008218878 A5 JP 2008218878A5 JP 2007057110 A JP2007057110 A JP 2007057110A JP 2007057110 A JP2007057110 A JP 2007057110A JP 2008218878 A5 JP2008218878 A5 JP 2008218878A5
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- 239000000758 substrate Substances 0.000 claims 12
- 229910002601 GaN Inorganic materials 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000007769 metal material Substances 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007057110A JP2008218878A (ja) | 2007-02-09 | 2007-03-07 | ＧａＮ系ＬＥＤ素子および発光装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007031354 | 2007-02-09 | ||
| JP2007057110A JP2008218878A (ja) | 2007-02-09 | 2007-03-07 | ＧａＮ系ＬＥＤ素子および発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008218878A JP2008218878A (ja) | 2008-09-18 |
| JP2008218878A5 true JP2008218878A5 (ko) | 2011-10-13 |
Family
ID=39838196
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007032965A Pending JP2008218440A (ja) | 2007-02-09 | 2007-02-14 | ＧａＮ系ＬＥＤ素子および発光装置 |
| JP2007057110A Pending JP2008218878A (ja) | 2007-02-09 | 2007-03-07 | ＧａＮ系ＬＥＤ素子および発光装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007032965A Pending JP2008218440A (ja) | 2007-02-09 | 2007-02-14 | ＧａＮ系ＬＥＤ素子および発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP2008218440A (ko) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101000276B1 (ko) * | 2008-12-04 | 2010-12-10 | 주식회사 에피밸리 | 반도체 발광소자 |
| JP2010153581A (ja) | 2008-12-25 | 2010-07-08 | Showa Denko Kk | 半導体発光素子及び半導体発光素子の製造方法、ランプ |
| KR100999756B1 (ko) * | 2009-03-13 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| US8643046B2 (en) | 2009-05-14 | 2014-02-04 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode |
| JP2010267797A (ja) * | 2009-05-14 | 2010-11-25 | Showa Denko Kk | 半導体発光素子、ランプ、照明装置、電子機器及び電極 |
| US8017958B2 (en) * | 2009-06-30 | 2011-09-13 | Koninklijke Philips Electronics N.V. | P-contact layer for a III-P semiconductor light emitting device |
| JP5793292B2 (ja) * | 2010-02-17 | 2015-10-14 | 豊田合成株式会社 | 半導体発光素子 |
| KR101039939B1 (ko) | 2010-04-28 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템 |
| KR20120015651A (ko) * | 2010-08-12 | 2012-02-22 | 서울옵토디바이스주식회사 | 개선된 광 추출 효율을 갖는 발광 다이오드 |
| JP5258853B2 (ja) | 2010-08-17 | 2013-08-07 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP5479391B2 (ja) | 2011-03-08 | 2014-04-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP2015109332A (ja) * | 2013-12-04 | 2015-06-11 | シャープ株式会社 | 半導体発光素子 |
| JP6711588B2 (ja) * | 2015-10-29 | 2020-06-17 | 旭化成株式会社 | 窒化物半導体発光素子及び窒化物半導体発光装置 |
| CN106159075B (zh) * | 2016-09-05 | 2018-11-27 | 江苏新广联半导体有限公司 | 一种具有低热阻绝缘层结构的倒装led芯片及制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3916011B2 (ja) * | 1997-02-21 | 2007-05-16 | シャープ株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| TW369730B (en) * | 1997-03-19 | 1999-09-11 | Sharp Kk | Semiconductor luminescence element |
| JP4236738B2 (ja) * | 1998-08-27 | 2009-03-11 | 星和電機株式会社 | 半導体素子の製造方法 |
| JP5143977B2 (ja) * | 2000-11-09 | 2013-02-13 | 星和電機株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| JP2003017748A (ja) * | 2001-06-27 | 2003-01-17 | Seiwa Electric Mfg Co Ltd | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| JP4159865B2 (ja) * | 2002-12-11 | 2008-10-01 | シャープ株式会社 | 窒化物系化合物半導体発光素子の製造方法 |
| JP4889193B2 (ja) * | 2003-07-23 | 2012-03-07 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP2006013034A (ja) * | 2004-06-24 | 2006-01-12 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子及び半導体発光素子の製造方法 |
| JP2006120927A (ja) * | 2004-10-22 | 2006-05-11 | Sharp Corp | 発光ダイオード及びその製造方法 |
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2007
- 2007-02-14 JP JP2007032965A patent/JP2008218440A/ja active Pending
- 2007-03-07 JP JP2007057110A patent/JP2008218878A/ja active Pending