JP2008199000A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP2008199000A JP2008199000A JP2008006039A JP2008006039A JP2008199000A JP 2008199000 A JP2008199000 A JP 2008199000A JP 2008006039 A JP2008006039 A JP 2008006039A JP 2008006039 A JP2008006039 A JP 2008006039A JP 2008199000 A JP2008199000 A JP 2008199000A
- Authority
- JP
- Japan
- Prior art keywords
- resin body
- light emitting
- emitting device
- semiconductor light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 229920005989 resin Polymers 0.000 claims abstract description 80
- 239000011347 resin Substances 0.000 claims abstract description 80
- 230000000694 effects Effects 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
【解決手段】 プリント配線基板3と、このプリント配線基板3上に実装される発光ダイオード素子2と、この発光ダイオード素子2を封止する樹脂体とを備えてなる半導体発光装置1である。前記樹脂体は発光ダイオード素子2の周囲に設けられる第1の樹脂体7と、前記発光ダイオード素子2及び前記第1の樹脂体7を封止する第2の樹脂体8とで構成される。また、前記第1の樹脂体7の高さは、前記発光ダイオード素子2のジャンクション23の位置よりは僅かに低く設定されている。
【選択図】 図1
Description
図1には本発明に係る半導体発光装置の第1実施例が示されている。この半導体発光装置1は、LED素子2と、このLED素子2が実装されるプリント配線基板3と、プリント配線基板3上においてLED素子2を封止する樹脂体とを備えている。
2 LED素子
3 プリント配線基板
3a 上面
3b 角部
7 第1の樹脂体
7a 上面
7k 角部
8 第2の樹脂体
10 半導体発光装置
13 反射膜
15 直線
30 半導体発光装置
31 枠体
40 半導体発光装置
Claims (10)
- プリント配線基板と、このプリント配線基板上に実装される発光ダイオード素子と、この発光ダイオード素子を封止する樹脂体とを備えてなる半導体発光装置において、
前記樹脂体は発光ダイオード素子の周囲に設けられる第1の樹脂体と、前記発光ダイオード素子及び前記第1の樹脂体を封止する第2の樹脂体とで構成され、
前記第1の樹脂体の高さが前記発光ダイオード素子に設けられるジャンクションの位置より低く設定されていることを特徴とする半導体発光装置。 - 前記第1の樹脂体の光反射率が前記第2の樹脂体の光反射率よりも大きく設定されている請求項1記載の半導体発光装置。
- 前記第1の樹脂体の高さが前記発光ダイオード素子に設けられるジャンクションの位置より僅かに低く設定されている請求項1記載の半導体発光装置。
- 前記第1の樹脂体は、その上面の角部が少なくとも前記発光ダイオード素子に設けられるジャンクションと第2の樹脂体の下面の角部とを結ぶ仮想の直線上の位置か、若しくは直線より上側に位置するように設定されている請求項1記載の半導体発光装置。
- 前記第1の樹脂体が拡散反射効果を有する請求項1記載の半導体発光装置。
- 前記第1の樹脂体の少なくとも上面に反射膜が設けられている請求項4記載の半導体発光装置。
- 前記第1の樹脂体の少なくとも上面に施された前記反射膜は、メッキ又はアルミニウムや銀など反射率の高い金属の薄膜である請求項6記載の半導体発光装置。
- 前記第1の樹脂体は白色系の樹脂、あるいは透明又は透光性の樹脂中に白色系のセラミックス、アルミニウム又は銀の少なくとも一つがフィラーとして混入されている請求項5記載の半導体発光装置。
- 前記第2の樹脂体の周囲に枠体が設けられている請求項1記載の半導体発光装置。
- 前記第1の樹脂体に熱伝導性の高いフィラーが含まれている請求項1記載の半導体発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008006039A JP5102051B2 (ja) | 2007-01-18 | 2008-01-15 | 半導体発光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007008711 | 2007-01-18 | ||
JP2007008711 | 2007-01-18 | ||
JP2008006039A JP5102051B2 (ja) | 2007-01-18 | 2008-01-15 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008199000A true JP2008199000A (ja) | 2008-08-28 |
JP5102051B2 JP5102051B2 (ja) | 2012-12-19 |
Family
ID=39666948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008006039A Active JP5102051B2 (ja) | 2007-01-18 | 2008-01-15 | 半導体発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7763905B2 (ja) |
JP (1) | JP5102051B2 (ja) |
CN (1) | CN101226979B (ja) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010263242A (ja) * | 2007-05-31 | 2010-11-18 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2010267910A (ja) * | 2009-05-18 | 2010-11-25 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2011108914A (ja) * | 2009-11-19 | 2011-06-02 | Nichia Corp | 半導体発光装置及びその製造方法 |
WO2012014679A1 (ja) * | 2010-07-30 | 2012-02-02 | ポリプラスチックス株式会社 | 発光装置の製造方法、発光装置及び反射体 |
JP2012059921A (ja) * | 2010-09-09 | 2012-03-22 | Citizen Holdings Co Ltd | 半導体発光装置及びその製造方法 |
JP2012519975A (ja) * | 2009-03-09 | 2012-08-30 | トリドニック イェネルスドルフ ゲー,エム,ベー,ハー | 光出力を向上させたledモジュール |
JP2013012529A (ja) * | 2011-06-28 | 2013-01-17 | Citizen Electronics Co Ltd | Ledパッケージ |
JP2013030600A (ja) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | 発熱デバイス |
JP2013530541A (ja) * | 2010-07-07 | 2013-07-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオード |
JP2013536568A (ja) * | 2010-06-28 | 2013-09-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面実装可能半導体素子を製造する方法 |
JPWO2012050110A1 (ja) * | 2010-10-12 | 2014-02-24 | ローム株式会社 | Ledモジュール |
JP2014086549A (ja) * | 2012-10-23 | 2014-05-12 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
JP2017017162A (ja) * | 2015-06-30 | 2017-01-19 | 日亜化学工業株式会社 | 発光装置 |
US9553245B2 (en) | 2014-12-24 | 2017-01-24 | Nichia Corporation | Light emitting device |
US9608178B2 (en) | 2010-06-22 | 2017-03-28 | Nitto Denko Corporation | Semiconductor light emitting device |
KR101772722B1 (ko) * | 2010-06-16 | 2017-08-29 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 소자 |
JP2018174207A (ja) * | 2017-03-31 | 2018-11-08 | 日機装株式会社 | 発光装置および発光装置の製造方法 |
KR101929873B1 (ko) * | 2011-09-09 | 2018-12-17 | 엘지이노텍 주식회사 | 발광소자 패키지, 라이트 유닛 및 표시장치 |
JP2021090077A (ja) * | 2018-06-29 | 2021-06-10 | 日亜化学工業株式会社 | 発光装置 |
WO2023199826A1 (ja) * | 2022-04-13 | 2023-10-19 | 株式会社デンソー | 光測距装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
WO2011129383A1 (ja) * | 2010-04-15 | 2011-10-20 | シチズン電子株式会社 | 発光装置 |
DE102010021791A1 (de) * | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds |
KR20140038553A (ko) | 2011-07-21 | 2014-03-28 | 크리,인코포레이티드 | 향상된 화학적 내성을 위한 발광 장치 패키지들, 부품들 및 방법들 그리고 관련된 방법들 |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US10686107B2 (en) * | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
CN103872231B (zh) * | 2014-03-14 | 2016-11-16 | 苏州晶品光电科技有限公司 | 半导体led发光器件 |
CN103904195B (zh) * | 2014-03-14 | 2016-11-09 | 苏州晶品光电科技有限公司 | 容器式led荧光封装结构 |
TWI578574B (zh) * | 2014-07-14 | 2017-04-11 | 新世紀光電股份有限公司 | 發光元件結構 |
DE102016112293A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
CN115746361A (zh) * | 2016-10-18 | 2023-03-07 | 迪睿合株式会社 | 含填料膜 |
CN108963045A (zh) * | 2017-05-19 | 2018-12-07 | 东莞昶通精密五金有限公司 | 一种高信赖性的白光led支架 |
WO2020003789A1 (ja) * | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11284234A (ja) * | 1998-03-30 | 1999-10-15 | Nichia Chem Ind Ltd | 発光装置 |
JPH11289110A (ja) * | 1998-04-02 | 1999-10-19 | Matsushita Electron Corp | 半導体発光装置 |
JP2000150969A (ja) * | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2002033517A (ja) * | 2000-05-09 | 2002-01-31 | Nichia Chem Ind Ltd | 発光素子とその製造方法 |
JP2004055632A (ja) * | 2002-07-17 | 2004-02-19 | Toshiba Corp | 半導体発光装置 |
JP2005277227A (ja) * | 2004-03-25 | 2005-10-06 | Citizen Electronics Co Ltd | 半導体発光装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10229067B4 (de) * | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
JP2004047748A (ja) * | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
EP1540746B1 (en) * | 2002-08-30 | 2009-11-11 | Lumination LLC | Coated led with improved efficiency |
-
2008
- 2008-01-15 JP JP2008006039A patent/JP5102051B2/ja active Active
- 2008-01-17 CN CN2008100095519A patent/CN101226979B/zh not_active Expired - Fee Related
- 2008-01-18 US US12/016,620 patent/US7763905B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11284234A (ja) * | 1998-03-30 | 1999-10-15 | Nichia Chem Ind Ltd | 発光装置 |
JPH11289110A (ja) * | 1998-04-02 | 1999-10-19 | Matsushita Electron Corp | 半導体発光装置 |
JP2000150969A (ja) * | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2002033517A (ja) * | 2000-05-09 | 2002-01-31 | Nichia Chem Ind Ltd | 発光素子とその製造方法 |
JP2004055632A (ja) * | 2002-07-17 | 2004-02-19 | Toshiba Corp | 半導体発光装置 |
JP2005277227A (ja) * | 2004-03-25 | 2005-10-06 | Citizen Electronics Co Ltd | 半導体発光装置 |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010263242A (ja) * | 2007-05-31 | 2010-11-18 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2012519975A (ja) * | 2009-03-09 | 2012-08-30 | トリドニック イェネルスドルフ ゲー,エム,ベー,ハー | 光出力を向上させたledモジュール |
JP2012519976A (ja) * | 2009-03-09 | 2012-08-30 | トリドニック イェネルスドルフ ゲー,エム,ベー,ハー | 改良ランプ用ledモジュールおよび改良ledランプ |
JP2010267910A (ja) * | 2009-05-18 | 2010-11-25 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2011108914A (ja) * | 2009-11-19 | 2011-06-02 | Nichia Corp | 半導体発光装置及びその製造方法 |
KR101772722B1 (ko) * | 2010-06-16 | 2017-08-29 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 소자 |
US9608178B2 (en) | 2010-06-22 | 2017-03-28 | Nitto Denko Corporation | Semiconductor light emitting device |
US8735928B2 (en) | 2010-06-28 | 2014-05-27 | Osram Opto Semiconductors Gmbh | Method for producing a surface-mountable semiconductor component |
JP2013536568A (ja) * | 2010-06-28 | 2013-09-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 表面実装可能半導体素子を製造する方法 |
KR101783755B1 (ko) * | 2010-07-07 | 2017-10-10 | 오스람 옵토 세미컨덕터스 게엠베하 | 발광 다이오드 |
JP2013530541A (ja) * | 2010-07-07 | 2013-07-25 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオード |
US9431378B2 (en) | 2010-07-07 | 2016-08-30 | Osram Opto Semiconductors Gmbh | Light-emitting diodes |
JP2012033726A (ja) * | 2010-07-30 | 2012-02-16 | Polyplastics Co | 発光装置の製造方法、発光装置及び反射体 |
WO2012014679A1 (ja) * | 2010-07-30 | 2012-02-02 | ポリプラスチックス株式会社 | 発光装置の製造方法、発光装置及び反射体 |
CN103069594A (zh) * | 2010-07-30 | 2013-04-24 | 宝理塑料株式会社 | 发光装置的制造方法、发光装置及反射体 |
JP2012059921A (ja) * | 2010-09-09 | 2012-03-22 | Citizen Holdings Co Ltd | 半導体発光装置及びその製造方法 |
US10950759B2 (en) | 2010-10-12 | 2021-03-16 | Rohm Co., Ltd. | LED module |
JPWO2012050110A1 (ja) * | 2010-10-12 | 2014-02-24 | ローム株式会社 | Ledモジュール |
JP6131048B2 (ja) * | 2010-10-12 | 2017-05-17 | ローム株式会社 | Ledモジュール |
US10050179B2 (en) | 2010-10-12 | 2018-08-14 | Rohm Co., Ltd. | LED module |
US10749079B2 (en) | 2010-10-12 | 2020-08-18 | Rohm Co., Ltd. | LED module |
JP2013012529A (ja) * | 2011-06-28 | 2013-01-17 | Citizen Electronics Co Ltd | Ledパッケージ |
JP2013030600A (ja) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | 発熱デバイス |
KR101929873B1 (ko) * | 2011-09-09 | 2018-12-17 | 엘지이노텍 주식회사 | 발광소자 패키지, 라이트 유닛 및 표시장치 |
JP2014086549A (ja) * | 2012-10-23 | 2014-05-12 | Stanley Electric Co Ltd | 半導体発光装置およびその製造方法 |
US9553245B2 (en) | 2014-12-24 | 2017-01-24 | Nichia Corporation | Light emitting device |
JP2017017162A (ja) * | 2015-06-30 | 2017-01-19 | 日亜化学工業株式会社 | 発光装置 |
JP2018174207A (ja) * | 2017-03-31 | 2018-11-08 | 日機装株式会社 | 発光装置および発光装置の製造方法 |
JP2021090077A (ja) * | 2018-06-29 | 2021-06-10 | 日亜化学工業株式会社 | 発光装置 |
JP7112007B2 (ja) | 2018-06-29 | 2022-08-03 | 日亜化学工業株式会社 | 発光装置 |
WO2023199826A1 (ja) * | 2022-04-13 | 2023-10-19 | 株式会社デンソー | 光測距装置 |
Also Published As
Publication number | Publication date |
---|---|
US7763905B2 (en) | 2010-07-27 |
CN101226979B (zh) | 2011-08-24 |
US20080179617A1 (en) | 2008-07-31 |
CN101226979A (zh) | 2008-07-23 |
JP5102051B2 (ja) | 2012-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5102051B2 (ja) | 半導体発光装置 | |
JP4516337B2 (ja) | 半導体発光装置 | |
JP4535928B2 (ja) | 半導体発光装置 | |
US8203218B2 (en) | Semiconductor device package including a paste member | |
JP6131048B2 (ja) | Ledモジュール | |
JP2007324205A (ja) | 発光装置 | |
US7622751B2 (en) | Light-emitting diode | |
TW200913323A (en) | Semiconductor light emitting device | |
JP2008251618A (ja) | 発光ダイオード及びその製造方法 | |
JP5754196B2 (ja) | 照明装置および表示装置 | |
JP6501564B2 (ja) | 発光装置 | |
JP7284366B2 (ja) | 発光装置 | |
JP2007115928A (ja) | 半導体発光装置 | |
JP2005150624A (ja) | 半導体装置用リードフレームとそれを用いた面発光装置 | |
JP2006310667A (ja) | 発光装置 | |
JP2011176234A (ja) | 半導体発光装置 | |
WO2018105448A1 (ja) | 発光装置 | |
JP2009026846A (ja) | Ledパッケージおよび表示装置 | |
JP2006237285A (ja) | 半導体発光装置 | |
JP4679917B2 (ja) | 半導体発光装置 | |
JP4938611B2 (ja) | 半導体発光装置 | |
JP2007266246A (ja) | Ledモジュール | |
JP6087098B2 (ja) | 光源装置、ledランプ、および液晶表示装置 | |
JP2002232015A (ja) | 半導体発光装置 | |
JP2019016728A (ja) | 発光装置、照明装置、及び、実装基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120418 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120925 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120927 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5102051 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |