JP2008182211A - 紫外線、電子線、イオンビームおよびx線パターニング用の印刷金属マスク - Google Patents
紫外線、電子線、イオンビームおよびx線パターニング用の印刷金属マスク Download PDFInfo
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- JP2008182211A JP2008182211A JP2007326949A JP2007326949A JP2008182211A JP 2008182211 A JP2008182211 A JP 2008182211A JP 2007326949 A JP2007326949 A JP 2007326949A JP 2007326949 A JP2007326949 A JP 2007326949A JP 2008182211 A JP2008182211 A JP 2008182211A
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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Abstract
【解決手段】インクジェット印刷による印刷マスク212を用いてビアおよびピラーを形成する。印刷マスクは懸濁金属ナノ粒子を含む液滴208により形成される。マスク形成およびその後の導電性構造の形成の両方において同じ金属ナノ粒子を利用することにより製造プロセスが簡素化される。また金属ナノ粒子を用いることにより、印刷液滴の大きさよりかなり小さい構造を形成できる。
【選択図】図2
Description
Claims (3)
- ビア開口を形成する方法であって、
誘電体層を形成するステップと、
プリンタを用いて懸濁金属ナノ粒子を含む少なくとも1個の個別液滴を前記誘電体層の第1部分の上に堆積させてマスクパターンを形成するステップと、
前記誘電体層を放射光に晒して、金属ナノ粒子の前記マスクパターンによりマスキングされていない領域を化学的に変化させるステップと、
前記誘電体層のうちで露光されなかった領域を除去して前記誘電体層にビアを形成するステップとを含む方法。 - ピラー構造を形成する方法であって、
プリンタを用いて懸濁金属ナノ粒子を含む液滴の第1の組を第1層の第1部分の上に堆積させてマスクパターンを形成するステップと、
前記パターンを放射光に晒すステップと、
前記第1層のうちで前記マスクパターンにより保護されていない部分を除去するステップとを含む方法。 - 薄膜トランジスタを製造する方法であって、
基板上にゲート電極を形成するステップと、
前記ゲート電極上に第1の誘電体層を形成するステップと、
前記第1の誘電体層の第1の領域および第2の領域の上にドレイン電極およびソース電極をそれぞれ形成するステップと、
前記ソース電極および前記ドレイン電極の上に第2の誘電体層を形成するステップと、
金属ナノ粒子の液滴を印刷して前記ソース電極と前記ドレイン電極との間のゲート領域をマスキングするステップと、
前記基板を放射光に晒して、前記基板のうちで露光された領域を化学的に変えるステップと、
前記基板のうちで化学的に変化していない領域を除去して、少なくとも前記ソース電極と前記ドレイン電極との間の層間誘電体層の領域にビアを形成するステップと、
前記ビア領域を半導体形成溶液で満たすステップとを含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/644,250 US7615483B2 (en) | 2006-12-22 | 2006-12-22 | Printed metal mask for UV, e-beam, ion-beam and X-ray patterning |
US11/644,250 | 2006-12-22 |
Publications (2)
Publication Number | Publication Date |
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JP2008182211A true JP2008182211A (ja) | 2008-08-07 |
JP5250252B2 JP5250252B2 (ja) | 2013-07-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007326949A Expired - Fee Related JP5250252B2 (ja) | 2006-12-22 | 2007-12-19 | 紫外線、電子線、イオンビームおよびx線パターニング用の印刷金属マスク |
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US (1) | US7615483B2 (ja) |
JP (1) | JP5250252B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009032782A (ja) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | 電子装置の製造方法 |
JP2012048183A (ja) * | 2010-08-27 | 2012-03-08 | Tokyo Denki Univ | レジストパターンの形成方法 |
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JP2018530902A (ja) | 2015-07-03 | 2018-10-18 | ナショナル リサーチ カウンシル オブ カナダ | 隙間が極細の配線を印刷する方法 |
EP3317724B1 (en) | 2015-07-03 | 2022-10-26 | National Research Council of Canada | Self-aligning metal patterning based on photonic sintering of metal nanoparticles |
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JP2009032782A (ja) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | 電子装置の製造方法 |
JP2012048183A (ja) * | 2010-08-27 | 2012-03-08 | Tokyo Denki Univ | レジストパターンの形成方法 |
JP2013539911A (ja) * | 2010-09-21 | 2013-10-28 | 中国科学院理化技術研究所 | レーザマイクロ・ナノ加工システム及び方法 |
JP2018529218A (ja) * | 2015-07-03 | 2018-10-04 | ナショナル リサーチ カウンシル オブ カナダ | 極細配線を印刷する方法 |
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US7615483B2 (en) | 2009-11-10 |
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