JP2008178911A - 金属粒子を用いた接合方法及び接合材料 - Google Patents
金属粒子を用いた接合方法及び接合材料 Download PDFInfo
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- JP2008178911A JP2008178911A JP2007335517A JP2007335517A JP2008178911A JP 2008178911 A JP2008178911 A JP 2008178911A JP 2007335517 A JP2007335517 A JP 2007335517A JP 2007335517 A JP2007335517 A JP 2007335517A JP 2008178911 A JP2008178911 A JP 2008178911A
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- metal
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- silver
- reducing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
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Abstract
平均粒径が100nm以下の金属粒子を用いた接合用材料と比較して、接合界面で金属結合による接合をより低温で実現可能な接合用材料,接合方法を提供することを目的とする。
【解決手段】
平均粒径が1nm〜50μm以下の金属酸化物,金属炭酸塩、又はカルボン酸金属塩の粒子から選ばれる少なくとも1種以上の金属粒子前駆体と、有機物からなる還元剤とを含み、前記金属粒子前駆体の含有量が接合用材料中における全質量部において50質量部を超えて99質量部以下である接合用材料を特徴とする。
【選択図】図2
Description
実施例1では平均粒径が約2μm程度の酸化銀(Ag2O)粒子を用い、還元剤である有機物にはミリスチルアルコール(和光純薬製)を用いた。図1にミリスチルアルコールの熱重量測定結果を示す。熱重量測定はSeiko Instruments 製TG/DTA6200を用いて行った。このとき昇温速度を10℃/minとし、大気中で測定を行った。この結果よりミリスチルアルコールは244℃における重量減少率が99%以上であることが得られた。次に、このミリスチルアルコールと酸化銀(Ag2O)粒子の混合比が重量比において1:4の割合になるように混合した。実際には酸化銀(Ag2O)0.8gとミリスチルアルコールを0.2g用いて接合材料を作製した。ミリスチルアルコールは常温では固体であるために、酸化銀(Ag2O)粒子と混合させる際には乳鉢を用いてすり潰すことにより10分間混合を行った。さらにこれら混合粉末にトルエン溶液を0.4g加えてペースト状にした後、1時間ほど振動機を用いて振動を加えることにより、混合溶液中に酸化銀(Ag2O)粒子とミリスチルアルコールを分散させた。
実施例2では平均粒子径が1μm程度の炭酸銀粒子(和光純薬製)とミリスチルアルコールを4:1の重量比において混合した接合材料(接合材料(1))と酢酸銀粒子(和光純薬製)とミリスチルアルコールを4:1の重量比において混合した接合材料(接合材料(2))及び平均粒径が約2μm程度の酸化銀粒子と酢酸銀粒子(和光純薬製)を4:1の重量比において混合した接合材料(接合材料(3))用いて接合を行い、せん断強度の測定を行った。試料の混合はそれぞれ乳鉢を用いて行った。接合用の試験片は上側の大きさが直径5mm,厚さ2mmで下側が直径10mm,厚さ5mmのものであり、表面に銀めっきがされたものである。この下側の試験片に上記接合材料を粉末のまま厚さ100μmのマスクを用いて塗布した後、上側の試験片を接合材料の上に設置し、加熱と加圧を同時に加えることで接合を行った。接合時の条件は加圧が2.5MPa、接合温度が200,250℃,300,350℃にて、接合時間は2分30秒にて行った。
図6は本発明の実施例の一つである非絶縁型半導体装置の構造を示した図である。図6(a)は上面図、図6(b)は図6(a)A−A′部の断面図である。半導体素子(MOSFET)301をセラミックス絶縁基板302上に、セラミックス絶縁基板302をベース材303上にそれぞれ搭載した後、エポキシ系樹脂ケース304,ボンディングワイヤ305,エポキシ系樹脂ふた306を設け、同一ケース内にシリコーンゲル樹脂307を充填した。ここで、ベース材303上のセラミックス絶縁基板302は平均粒径が2μm程度の酸化銀(Ag2O)粒子とミリスチルアルコールを4:1の重量比においてトルエン溶液に分散したペースト材で構成された接合層308で接合され、セラミックス絶縁基板302の銅板302a上には8個のSiからなるMOSFET素子301が上記酸化銀(Ag2O)粒子とミリスチルアルコールをトルエンに分散したペースト材で構成された接合層309で接合されている。この酸化銀(Ag2O)粒子とミリスチルアルコールをトルエンに分散したペースト材で構成された接合層308及び309による接合は、先ず、セラミックス絶縁基板302の銅板302a(Niめっきが施されている)上、及びベース材303上に上記酸化銀(Ag2O)粒子とミリスチルアルコールを4:1の重量比でトルエン溶液に分散させたペースト材を銅板302a(Niめっきが施されている)上とベース材303上にそれぞれ塗布する。
図9は本発明を用いた非絶縁型半導体装置における他の実施例の一つを示した図である。
図11は実施例3と同様の非絶縁型半導体装置の構造を示した図である。本実施例では、実施例3のボンディングワイヤ305をクリップ状の接続端子505とした。
本実施例ではセルラー電話機等の送信部に用いる高周波電力増幅装置としての絶縁型半導体装置について説明する。
本発明ではミニモールド型トランジスタ用のリードフレームとして複合材を適用した非絶縁型半導体装置について説明する。
LEDを基板に実装する際に本発明の接合材料を用いて接合を行うことで、従来の半田,熱伝導性接着材よりも放熱性を向上させることが可能になる。
202 酸化銀粒子
203 ミリスチルアルコール(還元剤)
204 焼結銀層
301,401 半導体素子
302,402 セラミックス絶縁基板
302a 銅板
303,403 ベース材
304 エポキシ系樹脂ケース
305 ボンディングワイヤ
306 エポキシ系樹脂ふた
307 シリコーンゲル樹脂
308,309 接合層
310 端子
311 温度検出用サーミスタ素子
402a,402b 配線
431 接合端子
Claims (12)
- 平均粒径が1nm以上50μm以下の金属酸化物,金属炭酸塩、又はカルボン酸金属塩の粒子から選ばれる1種以上の金属粒子前駆体と有機物からなる還元剤とを含み、前記金属粒子前駆体の含有量が接合用材料中における全質量部において50質量部を超えて99質量部以下であることを特徴とする接合用材料。
- 請求項1において、前記金属酸化物が、金,銀、または銅の酸化物であり、前記金属炭酸塩が炭酸銀であり、前記カルボン酸金属塩が酢酸銀であることを特徴とする接合用材料。
- 請求項1において、前記還元剤がアルコール類,カルボン酸類,アミン類,カルボン酸金属塩から選ばれた1種または2種以上の混合物であることを特徴とする接合用材料。
- 請求項1において、前記金属粒子前駆体の全重量に対して前記還元剤の含有量が1質量部〜50質量部であることを特徴とする接合用材料。
- 請求項1において、前記金属粒子前駆体に粒径が1μm〜50μmの粒子を含むことを特徴とする接合用材料。
- 請求項5において、前記金属粒子前駆体に粒径が1nm〜100nmの粒子を含むことを特徴とする接合用材料。
- 請求項1において、前記還元剤の400℃までの加熱における熱重量減少率が99%以上であることを特徴とする接合用材料。
- 平均粒径が1nm以上50μm以下の金属酸化物,金属炭酸塩、又はカルボン酸金属塩の粒子から選ばれる1種以上の金属粒子前駆体と、有機物からなる還元剤と、溶媒とを含むペースト状接合用材料。
- 半導体素子の電極と、金属部材との間に、平均粒径が1nm以上50μm以下の金属酸化物,金属炭酸塩、又はカルボン酸金属塩の粒子から選ばれる1種以上の金属粒子前駆体と有機物からなる還元剤とを含む接合用材料を配置し、加熱,加圧により前記半導体素子の電極と金属部材とを接合することを特徴とする接合方法。
- 請求項9において、40℃以上400℃以下の加熱と0より大きく10Mpaより小さい加圧を加えることを特徴とする接合方法。
- 請求項9において、前記加熱により前記金属粒子前駆体を還元させて平均粒径が100nm以下の金属粒子を生成させることを特徴とする接合方法。
- 請求項1において、鱗片状の銀と熱硬化性樹脂を含むことを特徴とする接合用材料。
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JP4895994B2 (ja) | 2012-03-14 |
JP2012094873A (ja) | 2012-05-17 |
US8821768B2 (en) | 2014-09-02 |
US20080156398A1 (en) | 2008-07-03 |
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