JP2008177539A - 傾斜ハイブリッド非晶質シリコンナノワイヤー太陽電池 - Google Patents

傾斜ハイブリッド非晶質シリコンナノワイヤー太陽電池 Download PDF

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Publication number
JP2008177539A
JP2008177539A JP2007296263A JP2007296263A JP2008177539A JP 2008177539 A JP2008177539 A JP 2008177539A JP 2007296263 A JP2007296263 A JP 2007296263A JP 2007296263 A JP2007296263 A JP 2007296263A JP 2008177539 A JP2008177539 A JP 2008177539A
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layer
amorphous layer
composition
photovoltaic device
doping
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JP2007296263A
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Japanese (ja)
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JP2008177539A5 (enExample
Inventor
Loucas Tsakalakos
ルーカス・ツァカラコス
James Neil Johnson
ジェイムズ・ニール・ジョンソン
Venkatesan Manivannan
ヴェンカテサン・マニヴァナン
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General Electric Co
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General Electric Co
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Publication of JP2008177539A publication Critical patent/JP2008177539A/ja
Publication of JP2008177539A5 publication Critical patent/JP2008177539A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
JP2007296263A 2006-11-15 2007-11-15 傾斜ハイブリッド非晶質シリコンナノワイヤー太陽電池 Pending JP2008177539A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/599,722 US20080135089A1 (en) 2006-11-15 2006-11-15 Graded hybrid amorphous silicon nanowire solar cells

Publications (2)

Publication Number Publication Date
JP2008177539A true JP2008177539A (ja) 2008-07-31
JP2008177539A5 JP2008177539A5 (enExample) 2011-01-06

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JP2007296263A Pending JP2008177539A (ja) 2006-11-15 2007-11-15 傾斜ハイブリッド非晶質シリコンナノワイヤー太陽電池

Country Status (5)

Country Link
US (1) US20080135089A1 (enExample)
EP (1) EP1923918A2 (enExample)
JP (1) JP2008177539A (enExample)
KR (1) KR20080044181A (enExample)
CN (1) CN101183689B (enExample)

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JP2009164547A (ja) * 2008-01-02 2009-07-23 Samsung Electro Mech Co Ltd 太陽電池及びその製造方法
JP2010056525A (ja) * 2008-08-28 2010-03-11 Samsung Electro-Mechanics Co Ltd 太陽電池及びその製造方法
KR20110068216A (ko) * 2009-12-15 2011-06-22 엘지디스플레이 주식회사 태양전지 및 그 제조방법
US8283739B2 (en) 2009-10-13 2012-10-09 Samsung Electronics Co., Ltd. Apparatuses for generating electrical energy
WO2013027975A1 (ko) * 2011-08-19 2013-02-28 포항공과대학교 산학협력단 태양전지 및 이의 제조방법
JP2013143569A (ja) * 2012-01-10 2013-07-22 Boeing Co:The ラテラル太陽電池構造
WO2013190646A1 (ja) * 2012-06-20 2013-12-27 株式会社日立製作所 太陽電池セルおよびその製造方法
JP2014527277A (ja) * 2011-03-17 2014-10-09 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブ ナノワイヤまたはマイクロワイヤをベースにし、改良された光学特性を有する機械的に安定なデバイスおよびその製造方法
KR20160061997A (ko) * 2013-08-14 2016-06-01 노르웨이전 유니버시티 오브 사이언스 앤드 테크놀러지(엔티엔유) 레이디얼 p-n 접합 나노와이어 태양전지

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US8003883B2 (en) * 2007-01-11 2011-08-23 General Electric Company Nanowall solar cells and optoelectronic devices
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
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KR101503557B1 (ko) * 2007-09-25 2015-03-17 퍼스트 솔라, 인코포레이티드 계면 층을 포함한 광기전 장치
US8106289B2 (en) * 2007-12-31 2012-01-31 Banpil Photonics, Inc. Hybrid photovoltaic device
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US7902540B2 (en) * 2008-05-21 2011-03-08 International Business Machines Corporation Fast P-I-N photodetector with high responsitivity
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WO2010071658A1 (en) * 2008-12-19 2010-06-24 Hewlett-Packard Development Company, Hewlett-Packard Development Company, L.P. Photovoltaic structure and method of fabrication employing nanowire on stub
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KR101915868B1 (ko) * 2008-12-30 2018-11-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사방지 용품 및 이의 제조 방법
TWI447917B (zh) * 2009-01-10 2014-08-01 Nexpower Technology Corp 薄膜太陽能電池及其前電極層之製作方法
KR101040956B1 (ko) * 2009-02-26 2011-06-16 전자부품연구원 산화아연 나노와이어를 이용한 박막 실리콘 태양전지 및 그의 제조방법
US20110124146A1 (en) * 2009-05-29 2011-05-26 Pitera Arthur J Methods of forming high-efficiency multi-junction solar cell structures
US8211735B2 (en) * 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
KR101033028B1 (ko) * 2009-06-25 2011-05-09 한양대학교 산학협력단 태양 전지 및 그 제조 방법
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
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DE102009029017A1 (de) * 2009-08-31 2011-03-03 Robert Bosch Gmbh Halbleiter-Schichtmaterial und Heteroübergangs-Solarzelle
WO2011066570A2 (en) * 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
WO2011092601A2 (en) * 2010-01-29 2011-08-04 King Abdullah University Of Science And Technology Bio-inspired nanostructures for implementing vertical pn-junctions
KR101652406B1 (ko) * 2010-02-19 2016-08-30 삼성전자주식회사 전기 에너지 발생 장치
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
KR101069066B1 (ko) 2010-04-23 2011-09-29 전북대학교산학협력단 알루미늄이 도핑된 산화아연 나노로드 기반 실리콘 태양전지의 투명전도성기판 제조방법
US8431817B2 (en) * 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
KR20130136906A (ko) 2010-06-18 2013-12-13 글로 에이비 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법
US9249017B2 (en) * 2010-07-12 2016-02-02 Board Of Regents, The University Of Texas System Nanowires and methods of making and using
TWI400352B (zh) * 2010-07-29 2013-07-01 Atomic Energy Council 提純冶金級矽基板矽奈米線太陽電池元件之製備方法
TWI424575B (zh) * 2010-08-02 2014-01-21 Univ Feng Chia A solar cell having an electrode of a micrometer or micrometer or lower conductive line
WO2012067687A2 (en) * 2010-08-26 2012-05-24 The Ohio State University Nanoscale emitters with polarization grading
WO2012035243A1 (fr) * 2010-09-14 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a base de nanofils pour l'émission de lumière
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JP2009164547A (ja) * 2008-01-02 2009-07-23 Samsung Electro Mech Co Ltd 太陽電池及びその製造方法
JP2010056525A (ja) * 2008-08-28 2010-03-11 Samsung Electro-Mechanics Co Ltd 太陽電池及びその製造方法
US8283739B2 (en) 2009-10-13 2012-10-09 Samsung Electronics Co., Ltd. Apparatuses for generating electrical energy
US8410563B2 (en) 2009-10-13 2013-04-02 Samsung Electronics Co., Ltd. Apparatuses for generating electrical energy
KR20110068216A (ko) * 2009-12-15 2011-06-22 엘지디스플레이 주식회사 태양전지 및 그 제조방법
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JP2014527277A (ja) * 2011-03-17 2014-10-09 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブ ナノワイヤまたはマイクロワイヤをベースにし、改良された光学特性を有する機械的に安定なデバイスおよびその製造方法
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