KR20080044181A - 구배된 하이브리드 비정질 규소 나노와이어 태양광 전지 - Google Patents

구배된 하이브리드 비정질 규소 나노와이어 태양광 전지 Download PDF

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Publication number
KR20080044181A
KR20080044181A KR1020070115979A KR20070115979A KR20080044181A KR 20080044181 A KR20080044181 A KR 20080044181A KR 1020070115979 A KR1020070115979 A KR 1020070115979A KR 20070115979 A KR20070115979 A KR 20070115979A KR 20080044181 A KR20080044181 A KR 20080044181A
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amorphous layer
layer
semiconductor
elongated
nanostructures
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Korean (ko)
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루카스 트사칼락코스
제임스 네일 존슨
벤카테산 마니반난
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제너럴 일렉트릭 캄파니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
KR1020070115979A 2006-11-15 2007-11-14 구배된 하이브리드 비정질 규소 나노와이어 태양광 전지 Withdrawn KR20080044181A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/599,722 2006-11-15
US11/599,722 US20080135089A1 (en) 2006-11-15 2006-11-15 Graded hybrid amorphous silicon nanowire solar cells

Publications (1)

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KR20080044181A true KR20080044181A (ko) 2008-05-20

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KR1020070115979A Withdrawn KR20080044181A (ko) 2006-11-15 2007-11-14 구배된 하이브리드 비정질 규소 나노와이어 태양광 전지

Country Status (5)

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US (1) US20080135089A1 (enExample)
EP (1) EP1923918A2 (enExample)
JP (1) JP2008177539A (enExample)
KR (1) KR20080044181A (enExample)
CN (1) CN101183689B (enExample)

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KR101120009B1 (ko) * 2011-08-03 2012-03-16 한국기계연구원 나노 돌기를 갖는 태양 전지 및 이의 제조 방법
WO2013016339A3 (en) * 2011-07-26 2013-04-25 Nanosys, Inc. Nanostructured battery active materials and methods of producing same
US8618407B2 (en) 2009-08-18 2013-12-31 Samsung Electronics Co., Ltd. Solar cells having nanowires and methods of fabricating nanowires
KR101435458B1 (ko) * 2011-12-12 2014-09-01 동국대학교 산학협력단 나노로드를 이용한 태양전지 및 그의 제조 방법
KR20140123205A (ko) * 2013-04-11 2014-10-22 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
US9263612B2 (en) 2010-03-23 2016-02-16 California Institute Of Technology Heterojunction wire array solar cells
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
CN108701653A (zh) * 2016-02-25 2018-10-23 株式会社索思未来 半导体集成电路装置
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