JP2008147644A5 - - Google Patents
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- JP2008147644A5 JP2008147644A5 JP2007298307A JP2007298307A JP2008147644A5 JP 2008147644 A5 JP2008147644 A5 JP 2008147644A5 JP 2007298307 A JP2007298307 A JP 2007298307A JP 2007298307 A JP2007298307 A JP 2007298307A JP 2008147644 A5 JP2008147644 A5 JP 2008147644A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- precursor
- nitrogen
- oxygen
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86677006P | 2006-11-21 | 2006-11-21 | |
US60/866,770 | 2006-11-21 | ||
US11/694,856 US20070287301A1 (en) | 2006-03-31 | 2007-03-30 | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
US11/694,856 | 2007-03-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008147644A JP2008147644A (ja) | 2008-06-26 |
JP2008147644A5 true JP2008147644A5 (zh) | 2010-12-02 |
JP5174435B2 JP5174435B2 (ja) | 2013-04-03 |
Family
ID=39517296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007298307A Active JP5174435B2 (ja) | 2006-11-21 | 2007-11-16 | ウェットエッチングアンダカットを最小にし且つ超低k(k<2.5)誘電体をポアシーリングする方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5174435B2 (zh) |
KR (1) | KR100939593B1 (zh) |
CN (1) | CN100550318C (zh) |
TW (1) | TWI392024B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8236684B2 (en) * | 2008-06-27 | 2012-08-07 | Applied Materials, Inc. | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer |
CN101740332B (zh) * | 2008-11-13 | 2012-04-25 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体元件的蚀刻方法 |
US20120122320A1 (en) * | 2010-11-17 | 2012-05-17 | Applied Materials, Inc. | Method Of Processing Low K Dielectric Films |
US9034770B2 (en) * | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
CN103839871B (zh) * | 2012-11-21 | 2017-09-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN105448705B (zh) * | 2014-06-18 | 2018-05-04 | 无锡华润上华科技有限公司 | 一种消除晶圆氧化膜上微粒的方法及其氧化膜 |
CN105244257B (zh) * | 2014-07-08 | 2020-06-23 | 中芯国际集成电路制造(上海)有限公司 | 改善多孔低k薄膜的突起缺陷的方法 |
CN105702619A (zh) * | 2014-11-27 | 2016-06-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
CN111863610A (zh) * | 2020-05-12 | 2020-10-30 | 中国电子科技集团公司第十一研究所 | 一种制备电极孔的方法及计算机可读存储介质 |
CN113667976A (zh) * | 2021-08-27 | 2021-11-19 | 中国科学院兰州化学物理研究所 | 一种具有封孔顶层的耐蚀dlc薄膜及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001077196A (ja) * | 1999-09-08 | 2001-03-23 | Sony Corp | 半導体装置の製造方法 |
TW535253B (en) * | 2000-09-08 | 2003-06-01 | Applied Materials Inc | Plasma treatment of silicon carbide films |
US6890850B2 (en) * | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
US6927178B2 (en) * | 2002-07-11 | 2005-08-09 | Applied Materials, Inc. | Nitrogen-free dielectric anti-reflective coating and hardmask |
US7005390B2 (en) * | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
KR100909175B1 (ko) * | 2002-12-27 | 2009-07-22 | 매그나칩 반도체 유한회사 | 듀얼 다마신 패턴 형성 방법 |
KR100573484B1 (ko) * | 2003-06-30 | 2006-04-24 | 에스티마이크로일렉트로닉스 엔.브이. | 반도체 소자 및 그 제조 방법 |
KR20050014231A (ko) * | 2003-07-30 | 2005-02-07 | 매그나칩 반도체 유한회사 | 반도체소자의 형성방법 |
JP2005050954A (ja) * | 2003-07-31 | 2005-02-24 | Toshiba Corp | 半導体装置およびその製造方法 |
US20050037153A1 (en) * | 2003-08-14 | 2005-02-17 | Applied Materials, Inc. | Stress reduction of sioc low k films |
JP4015976B2 (ja) * | 2003-08-28 | 2007-11-28 | 株式会社東芝 | 電子装置の製造方法 |
JP2005203568A (ja) * | 2004-01-15 | 2005-07-28 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法及び半導体装置 |
JP2006332408A (ja) * | 2005-05-27 | 2006-12-07 | Sony Corp | 半導体装置の製造方法 |
-
2007
- 2007-10-26 KR KR1020070108170A patent/KR100939593B1/ko not_active IP Right Cessation
- 2007-10-29 CN CNB2007101651423A patent/CN100550318C/zh not_active Expired - Fee Related
- 2007-10-29 TW TW096140628A patent/TWI392024B/zh active
- 2007-11-16 JP JP2007298307A patent/JP5174435B2/ja active Active
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