JP2008137846A - 炭素細長構造束状体、その製造方法および電子素子 - Google Patents
炭素細長構造束状体、その製造方法および電子素子 Download PDFInfo
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- JP2008137846A JP2008137846A JP2006325297A JP2006325297A JP2008137846A JP 2008137846 A JP2008137846 A JP 2008137846A JP 2006325297 A JP2006325297 A JP 2006325297A JP 2006325297 A JP2006325297 A JP 2006325297A JP 2008137846 A JP2008137846 A JP 2008137846A
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- carbon
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- elongated
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- catalyst
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Abstract
【解決手段】炭素細長構造体は、化学気相成長法で得られ、真空度、原料組成、触媒組成、触媒層膜厚、触媒担持層組成、触媒担持層膜厚、成長温度、希釈ガス組成、ガス流量および希釈ガス濃度からなる条件の少なくとも一つを調整することにより、先端部分が炭素ネットワークにより互いに繋がる。
【選択図】図1
Description
この状態は、単層または複層のグラファイトシートに類似している。すなわち、本発明に係る炭素細長構造束状体は、単層または複層のグラファイトシート状の炭素ネットワークから柱状に突き出ている構造をなしている。
触媒担持体層チタンナイトライド(TiN)層の膜厚とコバルト(Co)層の膜厚とを種々変更したものを作製し、熱CVD法により炭素細長構造体成長を行った。成長温度は510℃でアセチレンとアルゴンの混合ガス(1:9)を1kPa成長炉に導入した。この結果、Co層の膜厚が例えば5nmと厚い場合には炭素細長構造体が成長せず、TiN層についても膜厚が30nmと厚い場合には先端部分が炭素ネットワークにより互いに繋がっている構造を得ることはできなかった。実験の結果から、先端部分が炭素ネットワークにより互いに繋がっている構造の炭素細長構造束状体を得るには、Co層の膜厚が0.5−2nm、TiN層の膜厚が2.5−15nmが望ましいことがわかった。
さらに同じ炭素細長構造束状体の平坦性を確認するため、AFMのタッピングモードで測定すると、500nm角の平均面粗さ(Ra)が3−4nm程度であることがわかった。この結果は、炭素細長構造束状体の先端部分の平坦性が高いことを示唆している。
熱酸化膜を有するシリコン基板上に下層配線となるCu(100nm)、Ta(15nm)及び触媒担持体層であるTiN(7.5nm)を連続して堆積し、さらにSiO2層を設けた。このSiO2層に直径2μm、深さ300nmのビアホールを触媒担持体層であるTiNまでリソグラフィにより開口を行った。このビア底にはすでにTiNが堆積されているので、その上にCo(1nm)(触媒薄膜層)をスパッタ法により堆積した。
炭素細長構造束状体をLSIの配線ビア構造に適用する際に、層間絶縁膜やトランジスタへの加熱の影響を最小限に抑えるため、CVD成長温度をより下げる必要がある。そこで、5nmのTiN層と1nmのCo層を用い、より低い成長温度で熱CVD法により炭素細長構造体の成長を行った。成長温度は450℃及び400℃で、原料ガスとしてアセチレンとアルゴンの混合ガス(1:9)を1kPa成長炉に導入した。成長中はアルゴンによりさらに混合ガスの希釈を行い、アセチレンの濃度は0.005%とした。この結果、いずれの成長温度においても先端部分が炭素ネットワークにより互いに繋がっている構造の炭素細長構造束状体が得られた。以上のように、成長温度の低下によっても炭素細長構造束状体の形成が容易であることがわかった。
2 下地層
3 Cu配線層
4 Ta膜
5 絶縁層
6 Ti膜
7 触媒金属膜
8 CNT
50 基板
51 炭素細長構造体
52 炭素細長構造束状体
53 先端部分
61 シリコン基板
62 トランジスタ
63a〜63f
層間絶縁膜
65 配線
66 ビア
67 コンタクト
68 保護層
Claims (10)
- 一方の先端部分が炭素ネットワークにより互いに繋がっている炭素細長構造束状体。
- 化学気相成長法によって得られたものである、請求項1に記載の炭素細長構造束状体。
- 互いに繋がっている前記先端部分が平坦な面を形成している、請求項1または2に記載の炭素細長構造束状体。
- 互いに繋がっている前記先端部分と前記炭素細長構造束状体の中間部との間が電気的にまたは熱的にまたは電気的および熱的に接続している、請求項1〜3のいずれかに記載の炭素細長構造束状体。
- 互いに繋がっている前記先端部分を研磨してなる、請求項1〜4のいずれかに記載の炭素細長構造束状体。
- 請求項1〜5のいずれかに記載の炭素細長構造束状体を導電体または熱伝導体または導電体兼熱伝導体として用いた電子素子。
- 前記電子素子が、ビア配線、放熱用バンプ、受動素子、放熱材料、または配線材料である、請求項6に記載の電子素子。
- 化学気相成長法による炭素細長構造束状体の製造方法において、真空度、原料組成、触媒組成、触媒層膜厚、触媒担持層組成、触媒担持層膜厚、成長温度、希釈ガス組成、ガス流量および希釈ガス濃度からなる条件の少なくとも一つを調整することにより、成長した炭素細長構造束状体の先端部分が炭素ネットワークにより互いに繋がるようになす、炭素細長構造束状体の製造方法。
- 互いに繋がるようになした前記先端部分が平坦な面を形成するようになる、請求項8に記載の炭素細長構造束状体の製造方法。
- 互いに繋がっている前記先端部分と前記炭素細長構造束状体の中間部との間が電気的にまたは熱的にまたは電気的および熱的に接続しているようになる、請求項8または9に記載の炭素細長構造束状体の製造方法。
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US20080131352A1 (en) | 2008-06-05 |
US20120040523A1 (en) | 2012-02-16 |
JP5526457B2 (ja) | 2014-06-18 |
US8632885B2 (en) | 2014-01-21 |
US9085831B2 (en) | 2015-07-21 |
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