JP2008131052A - Ｓｉ基板およびＳｉＧｅ基板用のクロムを含まないエッチング液、そのエッチング液を使用して欠陥を明らかにする方法、およびそのエッチング液を使用してＳｉ基板およびＳｉＧｅ基板を処理するプロセス - Google Patents

Ｓｉ基板およびＳｉＧｅ基板用のクロムを含まないエッチング液、そのエッチング液を使用して欠陥を明らかにする方法、およびそのエッチング液を使用してＳｉ基板およびＳｉＧｅ基板を処理するプロセス Download PDF

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Publication number
JP2008131052A
JP2008131052A JP2007300740A JP2007300740A JP2008131052A JP 2008131052 A JP2008131052 A JP 2008131052A JP 2007300740 A JP2007300740 A JP 2007300740A JP 2007300740 A JP2007300740 A JP 2007300740A JP 2008131052 A JP2008131052 A JP 2008131052A
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Japan
Prior art keywords
etchant
substrate
etching
acetic acid
etching solution
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JP2007300740A
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Japanese (ja)
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JP2008131052A6 (ja
Inventor
Alexandra Abbadie
アバディ アレクサンドラ
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Soitec SA
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Soitec SA
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Publication of JP2008131052A publication Critical patent/JP2008131052A/ja
Publication of JP2008131052A6 publication Critical patent/JP2008131052A6/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2007300740A 2006-11-23 2007-11-20 Ｓｉ基板およびＳｉＧｅ基板用のクロムを含まないエッチング液、そのエッチング液を使用して欠陥を明らかにする方法、およびそのエッチング液を使用してＳｉ基板およびＳｉＧｅ基板を処理するプロセス Pending JP2008131052A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06291823.0 2006-11-23
EP06291823A EP1926132A1 (en) 2006-11-23 2006-11-23 Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution

Publications (2)

Publication Number Publication Date
JP2008131052A true JP2008131052A (ja) 2008-06-05
JP2008131052A6 JP2008131052A6 (ja) 2008-08-14

Family

ID=38057400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007300740A Pending JP2008131052A (ja) 2006-11-23 2007-11-20 Ｓｉ基板およびＳｉＧｅ基板用のクロムを含まないエッチング液、そのエッチング液を使用して欠陥を明らかにする方法、およびそのエッチング液を使用してＳｉ基板およびＳｉＧｅ基板を処理するプロセス

Country Status (7)

Country Link
US (1) US7635670B2 (ko)
EP (1) EP1926132A1 (ko)
JP (1) JP2008131052A (ko)
KR (1) KR100930294B1 (ko)
CN (1) CN101186827B (ko)
SG (1) SG143125A1 (ko)
TW (1) TW200823280A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029619A (ja) * 2009-06-24 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011066392A (ja) * 2009-06-24 2011-03-31 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011228651A (ja) * 2010-03-30 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

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US8595055B2 (en) 2001-03-27 2013-11-26 Points.Com Apparatus and method of facilitating the exchange of points between selected entities
EP1918985B1 (en) * 2006-10-31 2010-05-26 S.O.I.TEC. Silicon on Insulator Technologies S.A. Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
EP1926132A1 (en) * 2006-11-23 2008-05-28 S.O.I.Tec Silicon on Insulator Technologies Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution
US7994064B2 (en) * 2009-06-15 2011-08-09 Twin Creeks Technologies, Inc. Selective etch for damage at exfoliated surface
CN102086519B (zh) * 2009-12-08 2012-10-10 北大方正集团有限公司 一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片
JP5565735B2 (ja) * 2010-11-12 2014-08-06 国立大学法人東北大学 Ｓｏｉ基板のエッチング方法及びｓｏｉ基板上の裏面照射型光電変換モジュールの作製方法
CN102364697B (zh) * 2011-06-30 2013-07-24 常州天合光能有限公司 一种去除rie制绒后晶体硅表面的微损伤层的方法
CN104195645B (zh) * 2014-08-06 2020-03-17 深圳市石金科技股份有限公司 用于刻蚀太阳能电池硅片的酸性制绒液、制绒方法、太阳能电池片及其制作方法
CN104596829A (zh) * 2015-01-20 2015-05-06 苏州同冠微电子有限公司 硅片二次缺陷检测液及检测方法
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105405755B (zh) * 2015-10-30 2018-11-06 深圳市石金科技股份有限公司 用于硅片金字塔制绒的酸性制绒液、制绒方法以及采用该制绒方法制绒而成的硅片
KR102379073B1 (ko) * 2017-03-28 2022-03-28 동우 화인켐 주식회사 식각액 조성물
KR102379074B1 (ko) * 2017-03-28 2022-03-25 동우 화인켐 주식회사 식각액 조성물
KR102372879B1 (ko) * 2017-03-29 2022-03-11 동우 화인켐 주식회사 식각액 조성물

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JPH04209532A (ja) * 1990-12-06 1992-07-30 Nippon Steel Corp シリコン結晶選択エッチング液
JP2004235350A (ja) * 2003-01-29 2004-08-19 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの結晶欠陥評価方法およびエッチング液

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US20040242015A1 (en) * 2003-03-04 2004-12-02 Kyoung-Chul Kim Etching compositions for silicon germanium and etching methods using the same
JP4370812B2 (ja) * 2003-05-21 2009-11-25 信越半導体株式会社 Ｓｏｉウェーハの検査方法
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EP1918985B1 (en) * 2006-10-31 2010-05-26 S.O.I.TEC. Silicon on Insulator Technologies S.A. Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
EP1926132A1 (en) * 2006-11-23 2008-05-28 S.O.I.Tec Silicon on Insulator Technologies Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution

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* Cited by examiner, † Cited by third party
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JPH04209532A (ja) * 1990-12-06 1992-07-30 Nippon Steel Corp シリコン結晶選択エッチング液
JP2004235350A (ja) * 2003-01-29 2004-08-19 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの結晶欠陥評価方法およびエッチング液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029619A (ja) * 2009-06-24 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011066392A (ja) * 2009-06-24 2011-03-31 Semiconductor Energy Lab Co Ltd 半導体基板の再生処理方法及びｓｏｉ基板の作製方法
JP2011228651A (ja) * 2010-03-30 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体基板の再生方法、再生半導体基板の作製方法、及びｓｏｉ基板の作製方法

Also Published As

Publication number Publication date
CN101186827B (zh) 2011-01-05
KR100930294B1 (ko) 2009-12-09
US7635670B2 (en) 2009-12-22
CN101186827A (zh) 2008-05-28
TW200823280A (en) 2008-06-01
SG143125A1 (en) 2008-06-27
EP1926132A1 (en) 2008-05-28
KR20080047285A (ko) 2008-05-28
US20080124938A1 (en) 2008-05-29

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