JP2008129571A5 - - Google Patents

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Publication number
JP2008129571A5
JP2008129571A5 JP2007021474A JP2007021474A JP2008129571A5 JP 2008129571 A5 JP2008129571 A5 JP 2008129571A5 JP 2007021474 A JP2007021474 A JP 2007021474A JP 2007021474 A JP2007021474 A JP 2007021474A JP 2008129571 A5 JP2008129571 A5 JP 2008129571A5
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JP
Japan
Prior art keywords
weight
acid
formulation
group
aminobenzothiazole
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JP2007021474A
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English (en)
Japanese (ja)
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JP2008129571A (ja
JP4499751B2 (ja
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Priority claimed from US11/602,662 external-priority patent/US7674755B2/en
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Publication of JP2008129571A publication Critical patent/JP2008129571A/ja
Publication of JP2008129571A5 publication Critical patent/JP2008129571A5/ja
Application granted granted Critical
Publication of JP4499751B2 publication Critical patent/JP4499751B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007021474A 2006-11-21 2007-01-31 フォトレジスト、エッチ残留物及びｂａｒｃを除去するための配合物及び同配合物を含む方法 Expired - Fee Related JP4499751B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/602,662 US7674755B2 (en) 2005-12-22 2006-11-21 Formulation for removal of photoresist, etch residue and BARC

Publications (3)

Publication Number Publication Date
JP2008129571A JP2008129571A (ja) 2008-06-05
JP2008129571A5 true JP2008129571A5 (fr) 2010-02-25
JP4499751B2 JP4499751B2 (ja) 2010-07-07

Family

ID=39480229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007021474A Expired - Fee Related JP4499751B2 (ja) 2006-11-21 2007-01-31 フォトレジスト、エッチ残留物及びｂａｒｃを除去するための配合物及び同配合物を含む方法

Country Status (5)

Country Link
JP (1) JP4499751B2 (fr)
KR (1) KR100942009B1 (fr)
CN (1) CN101187789B (fr)
SG (1) SG143115A1 (fr)
TW (1) TWI355569B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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KR101399502B1 (ko) * 2008-09-19 2014-06-27 주식회사 동진쎄미켐 티에프티 엘시디용 열경화성 수지 박리액 조성물
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
CN102043356B (zh) * 2009-10-13 2012-09-26 奇美实业股份有限公司 清洗基板用洗净液组成物
KR101983202B1 (ko) * 2011-06-01 2019-05-28 아반토 퍼포먼스 머티리얼즈, 엘엘씨 구리, 텅스텐, 및 다공성의 유전 상수 κ가 낮은 유전체들에 대한 양립성이 향상된 반수성 중합체 제거 조성물
CN102902169A (zh) * 2011-07-29 2013-01-30 中芯国际集成电路制造(上海)有限公司 去除光刻胶层的方法
DE102011088885A1 (de) * 2011-12-16 2013-06-20 Wacker Chemie Ag Siliconlöser
US9460934B2 (en) * 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
JP6703098B2 (ja) 2016-03-31 2020-06-03 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
EP3519895A4 (fr) * 2016-09-28 2020-06-17 Dow Global Technologies Llc Solvants destinés à être utilisés dans l'industrie électronique
CN107957661A (zh) * 2016-10-18 2018-04-24 东友精细化工有限公司 抗蚀剂剥离液组合物及利用其的抗蚀剂的剥离方法
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
US10844332B2 (en) 2017-12-15 2020-11-24 Tokyo Electron Limited Aqueous cleaning solution and method of protecting features on a substrate during etch residue removal
TWI692679B (zh) * 2017-12-22 2020-05-01 美商慧盛材料美國責任有限公司 光阻剝除劑
CN108753478A (zh) * 2018-06-19 2018-11-06 成都青洋电子材料有限公司 一种半导体单晶硅清洗剂及其清洗方法
CN108998267A (zh) * 2018-08-29 2018-12-14 李少伟 一种半导体器件防蚀剂清洗剂及制备方法
US10952430B2 (en) 2019-02-06 2021-03-23 Virox Technologies Inc. Shelf-stable antimicrobial compositions
TWI749964B (zh) * 2020-12-24 2021-12-11 達興材料股份有限公司 鹼性清洗組合物、清洗方法和半導體製造方法
KR102364962B1 (ko) 2021-09-01 2022-02-18 김봉건 절삭용 공구 및 이를 포함하는 절삭 공작기계

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3264405B2 (ja) 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
KR100518714B1 (ko) * 2002-02-19 2005-10-05 주식회사 덕성 레지스트 박리액 조성물
KR100520397B1 (ko) * 2002-10-29 2005-10-11 동우 화인켐 주식회사 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
JP2005215627A (ja) * 2004-02-02 2005-08-11 Japan Organo Co Ltd レジスト剥離廃液の再生処理方法及び装置
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
KR100606187B1 (ko) * 2004-07-14 2006-08-01 테크노세미켐 주식회사 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
CN1290962C (zh) * 2004-12-22 2006-12-20 中国科学院上海微系统与信息技术研究所 高介电材料钛酸锶钡化学机械抛光用的纳米抛光液
KR20060108436A (ko) * 2005-04-13 2006-10-18 매그나칩 반도체 유한회사 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법
US7674755B2 (en) * 2005-12-22 2010-03-09 Air Products And Chemicals, Inc. Formulation for removal of photoresist, etch residue and BARC

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