JP2008124078A5 - - Google Patents
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- Publication number
- JP2008124078A5 JP2008124078A5 JP2006303153A JP2006303153A JP2008124078A5 JP 2008124078 A5 JP2008124078 A5 JP 2008124078A5 JP 2006303153 A JP2006303153 A JP 2006303153A JP 2006303153 A JP2006303153 A JP 2006303153A JP 2008124078 A5 JP2008124078 A5 JP 2008124078A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- insulating film
- generation chamber
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000287463 Phalacrocorax Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006303153A JP4997925B2 (ja) | 2006-11-08 | 2006-11-08 | シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置 |
| CN2007800416265A CN101558472B (zh) | 2006-11-08 | 2007-10-29 | 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 |
| US12/513,361 US20120211351A1 (en) | 2006-11-08 | 2007-10-29 | Method and apparatus for forming silicon dots and method and apparatus for forming a substrate with silicon dots and insulating film |
| PCT/JP2007/070992 WO2008056556A1 (en) | 2006-11-08 | 2007-10-29 | Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film |
| KR1020097009409A KR101043009B1 (ko) | 2006-11-08 | 2007-10-29 | 실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006303153A JP4997925B2 (ja) | 2006-11-08 | 2006-11-08 | シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008124078A JP2008124078A (ja) | 2008-05-29 |
| JP2008124078A5 true JP2008124078A5 (enExample) | 2009-05-21 |
| JP4997925B2 JP4997925B2 (ja) | 2012-08-15 |
Family
ID=39364376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006303153A Expired - Fee Related JP4997925B2 (ja) | 2006-11-08 | 2006-11-08 | シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120211351A1 (enExample) |
| JP (1) | JP4997925B2 (enExample) |
| KR (1) | KR101043009B1 (enExample) |
| CN (1) | CN101558472B (enExample) |
| WO (1) | WO2008056556A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044569B (zh) * | 2009-10-23 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 电容器及其制造方法 |
| CN102891134A (zh) * | 2011-07-18 | 2013-01-23 | 中国科学院微电子研究所 | 一种基于mos电容的等离子体损伤测试结构 |
| JP2015504479A (ja) * | 2011-11-08 | 2015-02-12 | トーソー エスエムディー，インク． | 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法 |
| WO2014148490A1 (ja) * | 2013-03-22 | 2014-09-25 | 株式会社日立国際電気 | 基板処理装置、及び半導体装置の製造方法 |
| JP6254036B2 (ja) * | 2014-03-31 | 2017-12-27 | 三菱重工業株式会社 | 三次元積層装置及び三次元積層方法 |
| JP6541374B2 (ja) * | 2014-07-24 | 2019-07-10 | 東京エレクトロン株式会社 | 基板処理装置 |
| US10096495B2 (en) | 2014-12-26 | 2018-10-09 | Tokyo Electron Limited | Substrate processing apparatus |
| KR102637922B1 (ko) * | 2016-03-10 | 2024-02-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 안정화 방법 및 이를 이용한 증착 방법 |
| JP6967954B2 (ja) * | 2017-12-05 | 2021-11-17 | 東京エレクトロン株式会社 | 排気装置、処理装置及び排気方法 |
| DE102020117347A1 (de) | 2020-07-01 | 2022-01-05 | VON ARDENNE Asset GmbH & Co. KG | Magnetronanordnung |
| KR102795097B1 (ko) * | 2023-07-31 | 2025-04-15 | 오스 주식회사 | 단일 챔버형 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| KR102783296B1 (ko) * | 2023-07-31 | 2025-03-19 | 오스 주식회사 | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03170667A (ja) * | 1989-11-29 | 1991-07-24 | Shimadzu Corp | スパッタリング装置 |
| JP3197557B2 (ja) * | 1990-11-27 | 2001-08-13 | 株式会社半導体エネルギー研究所 | 被膜形成方法 |
| JP3406959B2 (ja) | 1992-10-16 | 2003-05-19 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による堆積膜形成方法 |
| JPH09102596A (ja) * | 1995-10-04 | 1997-04-15 | Fujitsu Ltd | 量子ドットの製造方法及び量子ドット装置 |
| JPH10140342A (ja) * | 1996-11-05 | 1998-05-26 | Canon Inc | スパッタ装置及びその装置による基板の成膜方法 |
| JPH11271553A (ja) * | 1998-03-23 | 1999-10-08 | Hitachi Cable Ltd | 光導波路用ガラス膜の形成方法及びその装置 |
| JP3812232B2 (ja) * | 1998-10-23 | 2006-08-23 | 日新電機株式会社 | 多結晶シリコン薄膜形成方法及び薄膜形成装置 |
| JP2002008983A (ja) | 2000-06-16 | 2002-01-11 | Hitachi Cable Ltd | 化合物半導体ウェハの製造方法 |
| WO2002020864A2 (en) * | 2000-06-16 | 2002-03-14 | Applied Materials, Inc. | System and method for depositing high dielectric constant materials and compatible conductive materials |
| JP2003201562A (ja) * | 2002-01-11 | 2003-07-18 | Nippon Telegr & Teleph Corp <Ntt> | 成膜モニタリング方法 |
| JP3773189B2 (ja) | 2002-04-24 | 2006-05-10 | 独立行政法人科学技術振興機構 | 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置 |
| US20040129223A1 (en) * | 2002-12-24 | 2004-07-08 | Park Jong Hyurk | Apparatus and method for manufacturing silicon nanodot film for light emission |
| JP2006176859A (ja) * | 2004-12-24 | 2006-07-06 | Canon Anelva Corp | シリコンナノ結晶構造体の作製方法 |
| JP2006286536A (ja) * | 2005-04-04 | 2006-10-19 | Ebara Corp | プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置 |
-
2006
- 2006-11-08 JP JP2006303153A patent/JP4997925B2/ja not_active Expired - Fee Related
-
2007
- 2007-10-29 WO PCT/JP2007/070992 patent/WO2008056556A1/ja not_active Ceased
- 2007-10-29 CN CN2007800416265A patent/CN101558472B/zh not_active Expired - Fee Related
- 2007-10-29 KR KR1020097009409A patent/KR101043009B1/ko not_active Expired - Fee Related
- 2007-10-29 US US12/513,361 patent/US20120211351A1/en not_active Abandoned
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