JP2008120659A - 二ホウ化マグネシウム超伝導体の製造方法 - Google Patents

二ホウ化マグネシウム超伝導体の製造方法 Download PDF

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JP2008120659A
JP2008120659A JP2006309780A JP2006309780A JP2008120659A JP 2008120659 A JP2008120659 A JP 2008120659A JP 2006309780 A JP2006309780 A JP 2006309780A JP 2006309780 A JP2006309780 A JP 2006309780A JP 2008120659 A JP2008120659 A JP 2008120659A
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magnesium diboride
magnesium
temperature
diboride superconductor
superconductor
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Junichi Shimoyama
淳一 下山
Hiroaki Kumakura
浩明 熊倉
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University of Tokyo NUC
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Abstract

【課題】６００℃未満の焼成温度での焼成でも、６００℃以上の焼成温度で得られたものと同様かそれ以上の超伝導特性を有する二ホウ化マグネシウム超伝導体の製造方法を提供する。
【解決手段】マグネシウムに対して０．９〜２５ｍｏｌ％の銀を添加して混合粉末とし、焼成温度を６００℃未満とする二ホウ化マグネシウム超伝導体の製造方法。
【効果】得られた二ホウ化マグネシウム超伝導体は、５５０℃あるいは５００℃での焼成により、臨界温度が３６Ｋ以上、２０Ｋ、低磁場での臨界電流密度が２×１０５Ａ／ｃｍ２以上の超伝導特性を有する。
【選択図】図１

Description

マグネシウムとホウ素の混合粉末を焼成して二ホウ化マグネシウム超伝導体の製造方法に関する。
従来法では、ＭｇとＢを十分に反応させてＭｇＢ２を生成するのに６００度以上の熱処理温度が必要であったが、６００度以上ではＭｇＢ２の結晶粒が粗大化するのに加えて高温であるために熱処理のコストがかさむという問題点があり、より低温での熱処理が望まれていた。
本発明は、６００℃未満の焼成温度での焼成でも、６００℃以上の焼成温度で得られたものと同様かそれ以上の超伝導特性を有する二ホウ化マグネシウム超伝導体の製造方法を提供することを目的とする。
本発明の二ホウ化マグネシウム超伝導体の製造方法は、マグネシウムに対して０．９〜２５ｍｏｌ％の銀を添加して混合粉末とし、焼成温度を６００℃未満としたことを特徴とする。
本発明により得られた二ホウ化マグネシウム超伝導体は、５５０℃あるいは５００℃での焼成によっても、臨界温度は３６Ｋ以上、２０Ｋ、低磁場での臨界電流密度も２ｘ １０５Ａ／ｃｍ２以上という良好な超伝導特性を有するに至った。
また、線材化のためには、ＭｇＢ２と金属とを複合化する必要があるが、低温での熱処理が可能となったことで、従来では使用出来なかったＭｇやＢと反応しやすい金属（例えば、銅、銅−ニッケル合金、アルミニウム）も複合金属材（シース材）として使用することが可能となり、ＭｇＢ２線材の性能向上、低コスト化に寄与する。
マグネシウム、ホウ素、銀をモル比で、１．１＋ｘ：２：ｘの比で混合した粉末を、ステンレス管に充填し、両端を封じた後、石英管に真空封入して、表１に示すように５００°Ｃおよび５５０°Ｃで７２時間、焼成を行った。このとき、銀添加量ｘは０〜０．１の範囲で変えた。得られたバルク試料について二ホウ化マグネシウム相生成の様子を粉末Ｘ線回折で調べた結果を図１および図２に示す。
図１は５５０°Ｃで７２時間焼成した試料のＸ線回折パターンで、銀を添加しないｘ＝０の試料では二ホウ化マグネシウム相がほとんど生成していないのに対し、ｘ＝０．０２の試料では原料マグネシウムの回折ピークが消え、二ホウ化マグネシウム相が主相となった。さらに銀の添加量を増やした試料でも二ホウ化マグネシウム相が主相でマグネシウム−銀合金相の生成量が増すことがわかった。
図２は５００°Ｃで７２時間焼成した試料のＸ線回折パターンを示した。ｘ＝ ０．０５の試料では二ホウ化マグネシウム相が主相として生成しており、従来より１００°Ｃ低い焼成温度でも焼成時間の延長によって二ホウ化マグネシウムが生成することを示す初めての結果である。図３はこれら低温で焼成した試料の磁化率の温度依存性であるが、二ホウ化マグネシウムが主相となった試料の臨界温度は３６Ｋ以上と十分に高く、また、表１に示すとおり、２０ Ｋ、低磁場での臨界電流密度も２ ｘ １０５Ａ／ｃｍ２以上と十分高いことがわかった。
本発明による二ホウ化マグネシウム超伝導体は、既に３ ｋｍ以上の長さの線材が開発されており、今後これを用いての、医療用磁気共鳴診断装置（ＭＲＩ）や磁気浮上列車用の超伝導電磁石としての実用が期待されているほか、限流器、変圧器などに応用できる可能性を持っている。
実験No.１から６による二ホウ化マグネシウムバルクの粉末のＸ線回折パターンを示すグラフ。 実験No.９、１０による二ホウ化マグネシウムバルクの粉末のＸ線回折パターンを示すグラフ。 実験No.１から６による二ホウ化マグネシウムの磁化率の温度依存性を示すグラフ。

Claims (1)

  1. マグネシウムとホウ素の混合粉末を焼成して二ホウ化マグネシウム超伝導体の製造方法であって、マグネシウムに対して０．９〜２５ｍｏｌ％の銀を添加して混合粉末とし、焼成温度を６００℃未満としたことを特徴とする二ホウ化マグネシウム超伝導体の製造方法
JP2006309780A 2006-11-16 2006-11-16 二ホウ化マグネシウム超伝導体の製造方法 Expired - Fee Related JP5126768B2 (ja)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009133758A1 (ja) 2008-05-02 2009-11-05 株式会社 エヌ・ティ・ティ・ドコモ 移動通信システムにおける基地局装置、ユーザ装置及び方法
JPWO2011059066A1 (ja) * 2009-11-13 2013-04-04 王子ホールディングス株式会社 植物代謝産物を利用した植物の種、雑種及び雑種両親種同定方法、並びにその方法により同定された植物の植栽方法
JP2013168962A (ja) * 2008-08-28 2013-08-29 Qualcomm Inc ワイヤレス環境において複数のアクセス技術をサポートすること
WO2013187268A1 (ja) * 2012-06-11 2013-12-19 株式会社 日立製作所 MgB2超電導線材およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045396B2 (ja) * 2007-11-30 2012-10-10 株式会社日立製作所 ＭｇＢ２超電導線材の製造方法

Citations (3)

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JP2002222619A (ja) * 2001-01-24 2002-08-09 Hideyuki Shinagawa 二硼化マグネシウム超伝導線材
JP2004269268A (ja) * 2003-03-04 2004-09-30 National Institute For Materials Science ＭｇＢ２超伝導体の製造方法
JP2006143500A (ja) * 2004-11-17 2006-06-08 Yokohama National Univ ナノ微粒子含有ＭｇＢ２系高温超伝導体、及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222619A (ja) * 2001-01-24 2002-08-09 Hideyuki Shinagawa 二硼化マグネシウム超伝導線材
JP2004269268A (ja) * 2003-03-04 2004-09-30 National Institute For Materials Science ＭｇＢ２超伝導体の製造方法
JP2006143500A (ja) * 2004-11-17 2006-06-08 Yokohama National Univ ナノ微粒子含有ＭｇＢ２系高温超伝導体、及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009133758A1 (ja) 2008-05-02 2009-11-05 株式会社 エヌ・ティ・ティ・ドコモ 移動通信システムにおける基地局装置、ユーザ装置及び方法
JP2013168962A (ja) * 2008-08-28 2013-08-29 Qualcomm Inc ワイヤレス環境において複数のアクセス技術をサポートすること
JPWO2011059066A1 (ja) * 2009-11-13 2013-04-04 王子ホールディングス株式会社 植物代謝産物を利用した植物の種、雑種及び雑種両親種同定方法、並びにその方法により同定された植物の植栽方法
WO2013187268A1 (ja) * 2012-06-11 2013-12-19 株式会社 日立製作所 MgB2超電導線材およびその製造方法
JP2013257970A (ja) * 2012-06-11 2013-12-26 Hitachi Ltd ＭｇＢ２超電導線材およびその製造方法

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