JP5126768B2 - 二ホウ化マグネシウム超伝導体の製造方法 - Google Patents

二ホウ化マグネシウム超伝導体の製造方法 Download PDF

Info

Publication number
JP5126768B2
JP5126768B2 JP2006309780A JP2006309780A JP5126768B2 JP 5126768 B2 JP5126768 B2 JP 5126768B2 JP 2006309780 A JP2006309780 A JP 2006309780A JP 2006309780 A JP2006309780 A JP 2006309780A JP 5126768 B2 JP5126768 B2 JP 5126768B2
Authority
JP
Japan
Prior art keywords
magnesium diboride
magnesium
diboride superconductor
superconductor
producing magnesium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006309780A
Other languages
English (en)
Other versions
JP2008120659A (ja
Inventor
淳一 下山
浩明 熊倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
University of Tokyo NUC
Original Assignee
National Institute for Materials Science
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science, University of Tokyo NUC filed Critical National Institute for Materials Science
Priority to JP2006309780A priority Critical patent/JP5126768B2/ja
Priority to PCT/JP2007/072080 priority patent/WO2008059864A1/ja
Publication of JP2008120659A publication Critical patent/JP2008120659A/ja
Application granted granted Critical
Publication of JP5126768B2 publication Critical patent/JP5126768B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
    • C04B35/58057—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on magnesium boride, e.g. MgB2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0856—Manufacture or treatment of devices comprising metal borides, e.g. MgB2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/401—Alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/408—Noble metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421—Boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase

Description

マグネシウムとホウ素の混合粉末を焼成して二ホウ化マグネシウム超伝導体の製造方法に関する。
従来法では、ＭｇとＢを十分に反応させてＭｇＢ２を生成するのに６００度以上の熱処理温度が必要であったが、６００度以上ではＭｇＢ２の結晶粒が粗大化するのに加えて高温であるために熱処理のコストがかさむという問題点があり、より低温での熱処理が望まれていた。
本発明は、６００℃未満の焼成温度での焼成でも、６００℃以上の焼成温度で得られたものと同様かそれ以上の超伝導特性を有する二ホウ化マグネシウム超伝導体の製造方法を提供することを目的とする。
本発明の二ホウ化マグネシウム超伝導体の製造方法は、マグネシウムに対して０．９〜２５ｍｏｌ％の銀を添加して混合粉末とし、焼成温度を６００℃未満としたことを特徴とする。
本発明により得られた二ホウ化マグネシウム超伝導体は、５５０℃あるいは５００℃での焼成によっても、臨界温度は３６Ｋ以上、２０Ｋ、低磁場での臨界電流密度も２ｘ １０５Ａ／ｃｍ２以上という良好な超伝導特性を有するに至った。
また、線材化のためには、ＭｇＢ２と金属とを複合化する必要があるが、低温での熱処理が可能となったことで、従来では使用出来なかったＭｇやＢと反応しやすい金属（例えば、銅、銅−ニッケル合金、アルミニウム）も複合金属材（シース材）として使用することが可能となり、ＭｇＢ２線材の性能向上、低コスト化に寄与する。
マグネシウム、ホウ素、銀をモル比で、１．１＋ｘ：２：ｘの比で混合した粉末を、ステンレス管に充填し、両端を封じた後、石英管に真空封入して、表１に示すように５００°Ｃおよび５５０°Ｃで７２時間、焼成を行った。このとき、銀添加量ｘは０〜０．１の範囲で変えた。得られたバルク試料について二ホウ化マグネシウム相生成の様子を粉末Ｘ線回折で調べた結果を図１および図２に示す。
図１は５５０°Ｃで７２時間焼成した試料のＸ線回折パターンで、銀を添加しないｘ＝０の試料では二ホウ化マグネシウム相がほとんど生成していないのに対し、ｘ＝０．０２の試料では原料マグネシウムの回折ピークが消え、二ホウ化マグネシウム相が主相となった。さらに銀の添加量を増やした試料でも二ホウ化マグネシウム相が主相でマグネシウム−銀合金相の生成量が増すことがわかった。
図２は５００°Ｃで７２時間焼成した試料のＸ線回折パターンを示した。ｘ＝ ０．０５の試料では二ホウ化マグネシウム相が主相として生成しており、従来より１００°Ｃ低い焼成温度でも焼成時間の延長によって二ホウ化マグネシウムが生成することを示す初めての結果である。図３はこれら低温で焼成した試料の磁化率の温度依存性であるが、二ホウ化マグネシウムが主相となった試料の臨界温度は３６Ｋ以上と十分に高く、また、表１に示すとおり、２０ Ｋ、低磁場での臨界電流密度も２ ｘ １０５Ａ／ｃｍ２以上と十分高いことがわかった。
本発明による二ホウ化マグネシウム超伝導体は、既に３ ｋｍ以上の長さの線材が開発されており、今後これを用いての、医療用磁気共鳴診断装置（ＭＲＩ）や磁気浮上列車用の超伝導電磁石としての実用が期待されているほか、限流器、変圧器などに応用できる可能性を持っている。
実験No.１から６による二ホウ化マグネシウムバルクの粉末のＸ線回折パターンを示すグラフ。 実験No.９、１０による二ホウ化マグネシウムバルクの粉末のＸ線回折パターンを示すグラフ。 実験No.１から６による二ホウ化マグネシウムの磁化率の温度依存性を示すグラフ。

Claims (1)

  1. マグネシウムとホウ素の混合粉末を焼成して二ホウ化マグネシウム超伝導体の製造方法であって、マグネシウムに対して０．９〜２５ｍｏｌ％の銀を添加して混合粉末とし、焼成温度を６００℃未満としたことを特徴とする二ホウ化マグネシウム超伝導体の製造方法
JP2006309780A 2006-11-16 2006-11-16 二ホウ化マグネシウム超伝導体の製造方法 Expired - Fee Related JP5126768B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006309780A JP5126768B2 (ja) 2006-11-16 2006-11-16 二ホウ化マグネシウム超伝導体の製造方法
PCT/JP2007/072080 WO2008059864A1 (fr) 2006-11-16 2007-11-14 Procédé de production d'un supraconducteur au diborure de magnésium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006309780A JP5126768B2 (ja) 2006-11-16 2006-11-16 二ホウ化マグネシウム超伝導体の製造方法

Publications (2)

Publication Number Publication Date
JP2008120659A JP2008120659A (ja) 2008-05-29
JP5126768B2 true JP5126768B2 (ja) 2013-01-23

Family

ID=39401670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006309780A Expired - Fee Related JP5126768B2 (ja) 2006-11-16 2006-11-16 二ホウ化マグネシウム超伝導体の製造方法

Country Status (2)

Country Link
JP (1) JP5126768B2 (ja)
WO (1) WO2008059864A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045396B2 (ja) * 2007-11-30 2012-10-10 株式会社日立製作所 ＭｇＢ２超電導線材の製造方法
JP5283423B2 (ja) 2008-05-02 2013-09-04 株式会社エヌ・ティ・ティ・ドコモ 移動通信システムにおける基地局装置、ユーザ装置及び方法
US8325661B2 (en) * 2008-08-28 2012-12-04 Qualcomm Incorporated Supporting multiple access technologies in a wireless environment
JPWO2011059066A1 (ja) * 2009-11-13 2013-04-04 王子ホールディングス株式会社 植物代謝産物を利用した植物の種、雑種及び雑種両親種同定方法、並びにその方法により同定された植物の植栽方法
JP5889116B2 (ja) * 2012-06-11 2016-03-22 株式会社日立製作所 ＭｇＢ２超電導線材およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222619A (ja) * 2001-01-24 2002-08-09 Hideyuki Shinagawa 二硼化マグネシウム超伝導線材
JP4016103B2 (ja) * 2003-03-04 2007-12-05 独立行政法人物質・材料研究機構 ＭｇＢ２超伝導体の製造方法
JP2006143500A (ja) * 2004-11-17 2006-06-08 Yokohama National Univ ナノ微粒子含有ＭｇＢ２系高温超伝導体、及びその製造方法

Also Published As

Publication number Publication date
JP2008120659A (ja) 2008-05-29
WO2008059864A1 (fr) 2008-05-22

Similar Documents

Publication Publication Date Title
Yamamoto et al. Effects of B4C doping on critical current properties of MgB2 superconductor
JP5107638B2 (ja) ＭｇＢ２を含有する超伝導素子
JP5229868B2 (ja) ＭｇＢ２超伝導線材の製造方法
JP4726747B2 (ja) マグネシウム、珪素、スズからなる金属間化合物の焼結体およびその製造方法
JP5126768B2 (ja) 二ホウ化マグネシウム超伝導体の製造方法
Chen et al. Miscibility gap and thermoelectric properties of ecofriendly Mg2Si1− xSnx (0.1≤ x≤ 0.8) solid solutions by flux method
Chauhan et al. Spinodal decomposition in (Ti, Zr) CoSb half-Heusler: A nanostructuring route toward high efficiency thermoelectric materials
JP2005529832A (ja) 超伝導物質および合成方法
Hu et al. Synthesis of Al-doped Mg2Si1− xSnx compound using magnesium alloy for thermoelectric application
JP2012066960A (ja) 鉄系超伝導体及びその製造方法
WO2002098794A1 (en) Mgb2 based superconductor having high critical current density and method for preparation thereof
Imaduddin et al. Possibility of the Higher Critical Temperature on MgB 2 Superconductor Synthesized by Powder-In-Sealed-Tube Method
JP4604247B2 (ja) テルビウム・ビスマス・タングステン酸化物固溶体からなる電気伝導材料及びその製造方法
Vignolo et al. High temperature heat treatment on boron precursor and PIT process optimization to improve the Jc performance of MgB2-based conductors
JP3728504B2 (ja) ＭｇＢ２超伝導線材の作製方法
JP5448942B2 (ja) 熱電変換材料
JP2004307256A (ja) 臨界電流密度及び不可逆磁界の高いＭｇＢ２系超電導体
JP5931413B2 (ja) ｐ型熱電変換材料及びその製造方法、並びに、熱電変換素子及び熱電変換モジュール
JP6493170B2 (ja) 熱電材料
Tan et al. Enhanced critical current density in MgB2 prepared by reaction of MgB4 and Mg
JP2021038435A (ja) 多結晶バルク体、及びその製造方法
JP2015156476A (ja) ｎ型熱電材料
WO2021053854A1 (en) Structure and circuit board
JPWO2015029272A1 (ja) 焼結体及びアモルファス膜
JP2004296156A (ja) ＭｇＢ２超伝導線材の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090908

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121002

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121023

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151109

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees