JP2008103711A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

Info

Publication number
JP2008103711A
JP2008103711A JP2007259068A JP2007259068A JP2008103711A JP 2008103711 A JP2008103711 A JP 2008103711A JP 2007259068 A JP2007259068 A JP 2007259068A JP 2007259068 A JP2007259068 A JP 2007259068A JP 2008103711 A JP2008103711 A JP 2008103711A
Authority
JP
Japan
Prior art keywords
layer
quantum well
type contact
light emitting
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007259068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008103711A5 (OSRAM
Inventor
Han-Youl Ryu
漢 烈 柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008103711A publication Critical patent/JP2008103711A/ja
Publication of JP2008103711A5 publication Critical patent/JP2008103711A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2007259068A 2006-10-20 2007-10-02 半導体発光素子 Pending JP2008103711A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060102465A KR20080035865A (ko) 2006-10-20 2006-10-20 반도체 발광 소자

Publications (2)

Publication Number Publication Date
JP2008103711A true JP2008103711A (ja) 2008-05-01
JP2008103711A5 JP2008103711A5 (OSRAM) 2011-01-13

Family

ID=39317060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007259068A Pending JP2008103711A (ja) 2006-10-20 2007-10-02 半導体発光素子

Country Status (3)

Country Link
US (1) US7812338B2 (OSRAM)
JP (1) JP2008103711A (OSRAM)
KR (1) KR20080035865A (OSRAM)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009139239A1 (ja) * 2008-05-14 2009-11-19 日本電気株式会社 窒化物半導体レーザ及びその製造方法
JP2010103429A (ja) * 2008-10-27 2010-05-06 Nitride Semiconductor Co Ltd 窒化ガリウム系発光装置の製造方法
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
JP2012216751A (ja) * 2011-03-30 2012-11-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
WO2013015035A1 (ja) * 2011-07-26 2013-01-31 日亜化学工業株式会社 半導体発光素子
JP2013084818A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子
JP2013149890A (ja) * 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
JP2013214700A (ja) * 2012-03-07 2013-10-17 Toshiba Corp 半導体発光素子
US8686398B2 (en) 2012-03-02 2014-04-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015506592A (ja) * 2012-01-31 2015-03-02 ソイテックＳｏｉｔｅｃ 電荷キャリアの分布が改善された光活性デバイス及びその形成方法
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
JP2015509669A (ja) * 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 導波光効果を低減させる低屈折率材料層を有する発光ダイオード
US9318645B2 (en) 2012-10-19 2016-04-19 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element
JP2016219547A (ja) * 2015-05-18 2016-12-22 ローム株式会社 半導体発光素子
JP2017143152A (ja) * 2016-02-09 2017-08-17 日亜化学工業株式会社 窒化物半導体発光素子
JP2018500762A (ja) * 2015-01-05 2018-01-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品
JP2019004160A (ja) * 2018-08-08 2019-01-10 日亜化学工業株式会社 窒化物半導体発光素子
JP2019041102A (ja) * 2017-08-22 2019-03-14 シャープ株式会社 レーザダイオード
WO2020036080A1 (ja) * 2018-08-16 2020-02-20 ソニー株式会社 発光デバイス
WO2021106928A1 (ja) * 2019-11-26 2021-06-03 日亜化学工業株式会社 窒化物半導体素子
JP2021090043A (ja) * 2019-12-03 2021-06-10 シャープ福山レーザー株式会社 ３族窒化物ベースレーザダイオード
JP2022071179A (ja) * 2015-10-08 2022-05-13 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色～赤色の発光を有するｉｉｉ族窒化物半導体発光ｌｅｄ
JP2022100211A (ja) * 2020-12-23 2022-07-05 日亜化学工業株式会社 窒化物半導体発光素子
WO2024105723A1 (ja) * 2022-11-14 2024-05-23 日本電信電話株式会社 多重量子井戸構造、半導体レーザおよび多重量子井戸構造の製造方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101018217B1 (ko) 2008-10-01 2011-02-28 삼성엘이디 주식회사 질화물 반도체 소자
KR20110057541A (ko) * 2009-11-24 2011-06-01 삼성엘이디 주식회사 질화물 반도체 발광소자
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP4960465B2 (ja) * 2010-02-16 2012-06-27 株式会社東芝 半導体発光素子
KR101659359B1 (ko) * 2010-07-14 2016-09-23 엘지이노텍 주식회사 발광 소자
WO2012078849A2 (en) * 2010-12-08 2012-06-14 Sensor Electronic Technology, Inc. Light emitting device with varying barriers
KR101136882B1 (ko) * 2011-03-15 2012-04-20 광주과학기술원 질화물 반도체 기반의 태양전지 및 그 제조방법
JP6081709B2 (ja) * 2011-03-25 2017-02-15 エルジー イノテック カンパニー リミテッド 発光素子
CN102820395B (zh) * 2011-06-07 2015-02-18 山东华光光电子有限公司 一种采用势垒高度渐变量子垒的led结构及其制备方法
KR101916020B1 (ko) * 2011-07-11 2018-11-07 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
US9385271B2 (en) 2011-08-11 2016-07-05 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US8787418B2 (en) * 2011-08-11 2014-07-22 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US8879598B2 (en) 2011-08-11 2014-11-04 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US10411156B2 (en) 2011-08-11 2019-09-10 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US9595634B2 (en) 2011-08-11 2017-03-14 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
FR2986661B1 (fr) * 2012-02-08 2014-09-05 Soitec Silicon On Insulator Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs
US8471243B1 (en) 2012-01-31 2013-06-25 Soitec Photoactive devices with improved distribution of charge carriers, and methods of forming same
TWI549317B (zh) * 2012-03-01 2016-09-11 財團法人工業技術研究院 發光二極體
KR101945808B1 (ko) * 2012-08-06 2019-02-08 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101992152B1 (ko) * 2012-11-16 2019-06-25 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
DE102013107969B4 (de) * 2013-07-25 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
FR3012675B1 (fr) * 2013-10-25 2015-12-25 Commissariat Energie Atomique Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente
JP2015126024A (ja) * 2013-12-25 2015-07-06 株式会社豊田自動織機 半導体基板および半導体基板の製造方法
TWI689109B (zh) * 2014-09-04 2020-03-21 南韓商首爾偉傲世有限公司 垂直式紫外線發光裝置及其製造方法
KR102342713B1 (ko) * 2015-06-23 2021-12-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
TWI577042B (zh) * 2015-07-15 2017-04-01 南臺科技大學 發光二極體晶片及數據發射及接收裝置
KR102477094B1 (ko) 2016-01-08 2022-12-13 삼성전자주식회사 비대칭 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자
CN105932126A (zh) * 2016-05-26 2016-09-07 湘能华磊光电股份有限公司 基于有源层提高发光二极管亮度的外延生长方法
CN107086258B (zh) * 2017-04-18 2019-05-14 安徽三安光电有限公司 一种多量子阱结构及其发光二极管
KR20190019539A (ko) 2017-08-18 2019-02-27 삼성전자주식회사 발광 소자 및 발광소자 패키지
KR101959141B1 (ko) * 2017-11-30 2019-03-15 주식회사 우리로 애벌란치 포토 다이오드
DE102019126506A1 (de) 2019-10-01 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
CN111641109B (zh) * 2020-06-09 2021-06-01 苏州长光华芯光电技术股份有限公司 一种多有源区级联的半导体激光器
KR20240071494A (ko) * 2022-11-15 2024-05-23 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치, 및 발광 소자의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152052A (ja) * 1992-11-10 1994-05-31 Nec Corp 多重量子井戸型半導体レーザ
JPH06164069A (ja) * 1992-11-25 1994-06-10 Fujitsu Ltd 半導体レーザ
JP2002223042A (ja) * 2000-11-21 2002-08-09 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ
JP2003520453A (ja) * 2000-01-24 2003-07-02 ルミレッズ ライティング ユーエス リミテッドライアビリティ カンパニー チャーピングされた多層井戸活性領域ｌｅｄ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152052A (ja) * 1992-11-10 1994-05-31 Nec Corp 多重量子井戸型半導体レーザ
JPH06164069A (ja) * 1992-11-25 1994-06-10 Fujitsu Ltd 半導体レーザ
JP2003520453A (ja) * 2000-01-24 2003-07-02 ルミレッズ ライティング ユーエス リミテッドライアビリティ カンパニー チャーピングされた多層井戸活性領域ｌｅｄ
JP2002223042A (ja) * 2000-11-21 2002-08-09 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009139239A1 (ja) * 2008-05-14 2009-11-19 日本電気株式会社 窒化物半導体レーザ及びその製造方法
JP2010103429A (ja) * 2008-10-27 2010-05-06 Nitride Semiconductor Co Ltd 窒化ガリウム系発光装置の製造方法
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
US8586965B2 (en) 2011-03-30 2013-11-19 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device
JP2012216751A (ja) * 2011-03-30 2012-11-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
WO2013015035A1 (ja) * 2011-07-26 2013-01-31 日亜化学工業株式会社 半導体発光素子
US9123851B2 (en) 2011-07-26 2015-09-01 Nichia Corporation Semiconductor light emitting element
JP2013084818A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子
JP2013149890A (ja) * 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
JP2015506592A (ja) * 2012-01-31 2015-03-02 ソイテックＳｏｉｔｅｃ 電荷キャリアの分布が改善された光活性デバイス及びその形成方法
US8686398B2 (en) 2012-03-02 2014-04-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015509669A (ja) * 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 導波光効果を低減させる低屈折率材料層を有する発光ダイオード
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
JP2013214700A (ja) * 2012-03-07 2013-10-17 Toshiba Corp 半導体発光素子
US9318645B2 (en) 2012-10-19 2016-04-19 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
JP2018500762A (ja) * 2015-01-05 2018-01-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品
JP2016219547A (ja) * 2015-05-18 2016-12-22 ローム株式会社 半導体発光素子
JP2022071179A (ja) * 2015-10-08 2022-05-13 オステンド・テクノロジーズ・インコーポレーテッド 琥珀色～赤色の発光を有するｉｉｉ族窒化物半導体発光ｌｅｄ
JP2017143152A (ja) * 2016-02-09 2017-08-17 日亜化学工業株式会社 窒化物半導体発光素子
JP2019041102A (ja) * 2017-08-22 2019-03-14 シャープ株式会社 レーザダイオード
JP2019004160A (ja) * 2018-08-08 2019-01-10 日亜化学工業株式会社 窒化物半導体発光素子
WO2020036080A1 (ja) * 2018-08-16 2020-02-20 ソニー株式会社 発光デバイス
JP2024042006A (ja) * 2019-11-26 2024-03-27 日亜化学工業株式会社 窒化物半導体素子
WO2021106928A1 (ja) * 2019-11-26 2021-06-03 日亜化学工業株式会社 窒化物半導体素子
JPWO2021106928A1 (OSRAM) * 2019-11-26 2021-06-03
JP7659213B2 (ja) 2019-11-26 2025-04-09 日亜化学工業株式会社 窒化物半導体素子
JP7469677B2 (ja) 2019-11-26 2024-04-17 日亜化学工業株式会社 窒化物半導体素子
JP2021090043A (ja) * 2019-12-03 2021-06-10 シャープ福山レーザー株式会社 ３族窒化物ベースレーザダイオード
JP7319559B2 (ja) 2020-12-23 2023-08-02 日亜化学工業株式会社 窒化物半導体発光素子
JP2022100211A (ja) * 2020-12-23 2022-07-05 日亜化学工業株式会社 窒化物半導体発光素子
WO2024105723A1 (ja) * 2022-11-14 2024-05-23 日本電信電話株式会社 多重量子井戸構造、半導体レーザおよび多重量子井戸構造の製造方法

Also Published As

Publication number Publication date
US20080093593A1 (en) 2008-04-24
US7812338B2 (en) 2010-10-12
KR20080035865A (ko) 2008-04-24

Similar Documents

Publication Publication Date Title
JP2008103711A (ja) 半導体発光素子
CN107851968B (zh) 具有到多个有源层中的选择性载流子注入的发光结构
CN100359707C (zh) 氮化镓系发光器件
TWI436495B (zh) 以氮化物為主之發光裝置
US7709845B2 (en) Semiconductor light emitting device with improved current spreading structure
KR100862497B1 (ko) 질화물 반도체 소자
JP4954536B2 (ja) 窒化物半導体発光素子
JP2009212523A (ja) Ｉｉｉ族窒素化合物半導体発光ダイオード
CN107004743B (zh) 半导体发光元件
WO2014061692A1 (ja) 窒化物半導体発光素子
JP6113363B2 (ja) 少なくとも１つの高障壁層を有する多重量子井戸を備えたオプトエレクトロニクス半導体チップ
KR101211657B1 (ko) 질화물계 반도체 발광소자
JP6433248B2 (ja) 半導体発光素子
KR20110084683A (ko) 양자우물 구조의 활성 영역을 갖는 발광 소자
KR100604406B1 (ko) 질화물 반도체 소자
KR20130096991A (ko) 자외선 발광소자
US11538962B2 (en) Light-emitting element and method for manufacturing light-emitting element
KR101423720B1 (ko) 다중양자웰 구조의 활성 영역을 갖는 발광 소자 및 그제조방법
KR100826422B1 (ko) 질화물 반도체 소자
KR101485690B1 (ko) 반도체 발광 소자 및 그 제조 방법
EP2009707B1 (en) Light emitting diode and method for manufacturing the same
JP4884826B2 (ja) 半導体発光素子
US20220367754A1 (en) Monolithic color-tunable light emitting diodes and methods thereof
KR100910476B1 (ko) 초격자구조의 활성층을 갖는 질화물 반도체 소자
JP6192722B2 (ja) オプトエレクトロニクス半導体ボディ及びオプトエレクトロニクス半導体チップ

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20100422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100917

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100928

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110905

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120626

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20120816

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121114

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130122