JP2008098651A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008098651A5 JP2008098651A5 JP2007280355A JP2007280355A JP2008098651A5 JP 2008098651 A5 JP2008098651 A5 JP 2008098651A5 JP 2007280355 A JP2007280355 A JP 2007280355A JP 2007280355 A JP2007280355 A JP 2007280355A JP 2008098651 A5 JP2008098651 A5 JP 2008098651A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- mirror
- space
- projection
- device manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims 18
- 150000001875 compounds Chemical class 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000012544 monitoring process Methods 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- 238000002310 reflectometry Methods 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00307608 | 2000-09-04 | ||
| EP00307608.0 | 2000-09-04 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001262809A Division JP4067078B2 (ja) | 2000-09-04 | 2001-08-31 | リソグラフィ投影装置およびデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008098651A JP2008098651A (ja) | 2008-04-24 |
| JP2008098651A5 true JP2008098651A5 (enExample) | 2008-10-16 |
| JP4743440B2 JP4743440B2 (ja) | 2011-08-10 |
Family
ID=8173241
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001262809A Expired - Fee Related JP4067078B2 (ja) | 2000-09-04 | 2001-08-31 | リソグラフィ投影装置およびデバイス製造方法 |
| JP2007280355A Expired - Fee Related JP4743440B2 (ja) | 2000-09-04 | 2007-10-29 | リソグラフィ投影装置及びデバイス製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001262809A Expired - Fee Related JP4067078B2 (ja) | 2000-09-04 | 2001-08-31 | リソグラフィ投影装置およびデバイス製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7671965B2 (enExample) |
| EP (1) | EP1186957B1 (enExample) |
| JP (2) | JP4067078B2 (enExample) |
| KR (1) | KR100656582B1 (enExample) |
| DE (1) | DE60127050T2 (enExample) |
| TW (1) | TW548524B (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4790970B2 (ja) * | 2000-12-21 | 2011-10-12 | イーユーヴィー リミテッド リアビリティ コーポレーション | 放射線誘起表面汚染の軽減 |
| US6664554B2 (en) * | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
| TW200402606A (en) * | 2002-06-11 | 2004-02-16 | Nippon Kogaku Kk | Exposure system and exposure method |
| US7050149B2 (en) | 2002-06-11 | 2006-05-23 | Nikon Corporation | Exposure apparatus and exposure method |
| SG128447A1 (en) * | 2002-09-30 | 2007-01-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1403715A3 (en) * | 2002-09-30 | 2006-01-18 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| DE10319005A1 (de) | 2003-04-25 | 2004-11-25 | Carl Zeiss Smt Ag | Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung |
| DE10321103A1 (de) * | 2003-05-09 | 2004-12-02 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung |
| US8945310B2 (en) * | 2003-05-22 | 2015-02-03 | Koninklijke Philips Electronics N.V. | Method and device for cleaning at least one optical component |
| DE10342239B4 (de) * | 2003-09-11 | 2018-06-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung |
| EP1522895B1 (en) * | 2003-10-06 | 2006-11-02 | ASML Netherlands B.V. | Method of and apparatus for supplying a dynamic protective layer to a mirror |
| US7208746B2 (en) * | 2004-07-14 | 2007-04-24 | Asml Netherlands B.V. | Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7355672B2 (en) | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| GB0426036D0 (en) * | 2004-11-26 | 2004-12-29 | Boc Group Plc | Protection of surfaces exposed to charged particles |
| US7211810B2 (en) * | 2004-12-29 | 2007-05-01 | Asml Netherlands B.V. | Method for the protection of an optical element, lithographic apparatus, and device manufacturing method |
| US7701554B2 (en) | 2004-12-29 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and optical component |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7365349B2 (en) * | 2005-06-27 | 2008-04-29 | Cymer, Inc. | EUV light source collector lifetime improvements |
| US7141806B1 (en) * | 2005-06-27 | 2006-11-28 | Cymer, Inc. | EUV light source collector erosion mitigation |
| US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| JP2007214253A (ja) * | 2006-02-08 | 2007-08-23 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の保護方法 |
| JP2007234822A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 露光装置及びその制御方法並びにデバイス製造方法 |
| GB0605725D0 (en) * | 2006-03-23 | 2006-05-03 | Boc Group Plc | Spectral filter repair |
| JP2008263173A (ja) * | 2007-03-16 | 2008-10-30 | Canon Inc | 露光装置 |
| CN101681114B (zh) | 2007-06-12 | 2013-05-08 | 皇家飞利浦电子股份有限公司 | 光学设备和原位处理euv光学部件以增强降低的反射率的方法 |
| JP2009272347A (ja) * | 2008-04-30 | 2009-11-19 | Toshiba Corp | 光反射型マスク、露光装置、測定方法、及び半導体装置の製造方法 |
| DE102008028868A1 (de) * | 2008-06-19 | 2009-12-24 | Carl Zeiss Smt Ag | Optische Baugruppe |
| DE102009043824A1 (de) * | 2009-08-21 | 2011-02-24 | Asml Netherlands B.V. | Reflektives optisches Element und Verfahren zu dessen Herstellung |
| CN108107681A (zh) * | 2016-11-25 | 2018-06-01 | 中国科学院长春光学精密机械与物理研究所 | 一种光刻投影物镜腔体精密监控装置 |
| DE102021212018B3 (de) | 2021-10-25 | 2022-11-10 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage, Verfahren zum Betreiben der Projektionsbelichtungsanlage |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58225636A (ja) * | 1982-06-25 | 1983-12-27 | バッテル・ディベロプメント・コーポレーション | X線を対象物に照射する装置 |
| JPH0682601B2 (ja) * | 1985-12-04 | 1994-10-19 | 株式会社日立製作所 | X線露光装置用ミラ− |
| EP0286306B1 (en) * | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond |
| US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| JP2725295B2 (ja) * | 1988-08-02 | 1998-03-11 | 日本電気株式会社 | シンクロトロン放射光露光装置 |
| WO1991017483A1 (de) * | 1990-05-02 | 1991-11-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Belichtungsvorrichtung |
| JPH04233717A (ja) * | 1990-12-28 | 1992-08-21 | Canon Inc | X線露光装置 |
| US5229872A (en) * | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| JPH0720293A (ja) * | 1993-06-30 | 1995-01-24 | Canon Inc | X線ミラー及びこれを用いたx線露光装置とデバイス製造方法 |
| US5593800A (en) * | 1994-01-06 | 1997-01-14 | Canon Kabushiki Kaisha | Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus |
| JP3599370B2 (ja) * | 1994-05-23 | 2004-12-08 | 日本碍子株式会社 | 水素製造装置 |
| EP0824722B1 (en) * | 1996-03-06 | 2001-07-25 | Asm Lithography B.V. | Differential interferometer system and lithographic step-and-scan apparatus provided with such a system |
| FR2752386B1 (fr) * | 1996-08-14 | 1998-09-11 | Commissariat Energie Atomique | Procede de nettoyage ou de decontamination d'un objet au moyen d'un faisceau laser ultraviolet et dispositif pour sa mise en oeuvre |
| DK0918984T3 (da) * | 1996-08-16 | 2001-10-22 | Zeptosens Ag | Optisk detektionsanordning |
| JPH1090496A (ja) * | 1996-09-19 | 1998-04-10 | Nikon Corp | 反射型光学素子及びこれを用いた反射型光学系 |
| DE69717975T2 (de) * | 1996-12-24 | 2003-05-28 | Asml Netherlands B.V., Veldhoven | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
| JPH10221499A (ja) * | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
| KR20010023314A (ko) * | 1997-08-26 | 2001-03-26 | 오노 시게오 | 노광 장치, 노광 방법, 투영 광학계의 압력 조정 방법 및노광 장치의 조립 방법 |
| JP2000091207A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
| US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
| JP2000173893A (ja) * | 1998-12-04 | 2000-06-23 | Nikon Corp | 投影露光装置及び光学素子の汚染判別方法 |
| US6533952B2 (en) * | 1999-06-08 | 2003-03-18 | Euv Llc | Mitigation of radiation induced surface contamination |
| US6304630B1 (en) * | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
| US6421421B1 (en) * | 2000-05-22 | 2002-07-16 | Plex, Llc | Extreme ultraviolet based on colliding neutral beams |
-
2001
- 2001-08-24 TW TW090120880A patent/TW548524B/zh not_active IP Right Cessation
- 2001-08-31 EP EP01307428A patent/EP1186957B1/en not_active Expired - Lifetime
- 2001-08-31 JP JP2001262809A patent/JP4067078B2/ja not_active Expired - Fee Related
- 2001-08-31 DE DE60127050T patent/DE60127050T2/de not_active Expired - Lifetime
- 2001-08-31 KR KR1020010053082A patent/KR100656582B1/ko not_active Expired - Fee Related
- 2001-09-04 US US09/943,758 patent/US7671965B2/en not_active Expired - Fee Related
-
2007
- 2007-10-29 JP JP2007280355A patent/JP4743440B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008098651A5 (enExample) | ||
| US7355672B2 (en) | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus | |
| TWI826575B (zh) | 用於極紫外光(euv)微影之護膜、圖案化裝置總成及動態氣鎖總成 | |
| TWI528117B (zh) | 光譜純度濾光器 | |
| US9329497B2 (en) | Substrate table, lithographic apparatus and device manufacturing method | |
| JP4875754B2 (ja) | 回転電極を備える放射源、および放射源を備えるリソグラフィ装置 | |
| TWI706217B (zh) | 用於euv微影之隔膜組件及其製造方法 | |
| TW201200971A (en) | Lithographic apparatus and method | |
| JP2008199034A5 (enExample) | ||
| EP1186957A3 (en) | Lithographic projection apparatus | |
| TW556050B (en) | Lithographic projection apparatus and semiconductor device manufacturing method | |
| WO2008087597A3 (en) | Device manufacturing method and lithographic apparatus | |
| JPWO2010150550A1 (ja) | 光学素子、照明装置、露光装置、及びデバイス製造方法 | |
| JP4564019B2 (ja) | 酸化物の量を減らす方法および酸化物の量を減らすための調整システム | |
| US20060127780A1 (en) | Forming a capping layer for a EUV mask and structures formed thereby | |
| TW200411329A (en) | Lithographic apparatus, device manufacturing method, device manufactured thereby, and computer program | |
| KR20070084558A (ko) | 하전된 입자에 노출된 표면의 보호 | |
| JP7252950B2 (ja) | 多孔質グラファイトペリクル | |
| NL2025186B1 (en) | Pellicle for euv lithography | |
| TW202439004A (zh) | 護膜支撐系統 | |
| JP2007234822A5 (enExample) | ||
| JP2007073587A5 (enExample) |