TW548524B - Lithographic projection apparatus, device manufacturing method and device manufactured thereby - Google Patents
Lithographic projection apparatus, device manufacturing method and device manufactured thereby Download PDFInfo
- Publication number
- TW548524B TW548524B TW090120880A TW90120880A TW548524B TW 548524 B TW548524 B TW 548524B TW 090120880 A TW090120880 A TW 090120880A TW 90120880 A TW90120880 A TW 90120880A TW 548524 B TW548524 B TW 548524B
- Authority
- TW
- Taiwan
- Prior art keywords
- mirror
- radiation
- mirror surface
- space
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00307608 | 2000-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548524B true TW548524B (en) | 2003-08-21 |
Family
ID=8173241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090120880A TW548524B (en) | 2000-09-04 | 2001-08-24 | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7671965B2 (enExample) |
| EP (1) | EP1186957B1 (enExample) |
| JP (2) | JP4067078B2 (enExample) |
| KR (1) | KR100656582B1 (enExample) |
| DE (1) | DE60127050T2 (enExample) |
| TW (1) | TW548524B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382789B (zh) * | 2003-09-11 | 2013-01-11 | Koninkl Philips Electronics Nv | 製造遠紫外線輻射或軟性x射線之方法及裝置 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4790970B2 (ja) * | 2000-12-21 | 2011-10-12 | イーユーヴィー リミテッド リアビリティ コーポレーション | 放射線誘起表面汚染の軽減 |
| US6664554B2 (en) * | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
| TW200402606A (en) * | 2002-06-11 | 2004-02-16 | Nippon Kogaku Kk | Exposure system and exposure method |
| US7050149B2 (en) | 2002-06-11 | 2006-05-23 | Nikon Corporation | Exposure apparatus and exposure method |
| SG128447A1 (en) * | 2002-09-30 | 2007-01-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1403715A3 (en) * | 2002-09-30 | 2006-01-18 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| DE10319005A1 (de) | 2003-04-25 | 2004-11-25 | Carl Zeiss Smt Ag | Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung |
| DE10321103A1 (de) * | 2003-05-09 | 2004-12-02 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung |
| US8945310B2 (en) * | 2003-05-22 | 2015-02-03 | Koninklijke Philips Electronics N.V. | Method and device for cleaning at least one optical component |
| EP1522895B1 (en) * | 2003-10-06 | 2006-11-02 | ASML Netherlands B.V. | Method of and apparatus for supplying a dynamic protective layer to a mirror |
| US7208746B2 (en) * | 2004-07-14 | 2007-04-24 | Asml Netherlands B.V. | Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7355672B2 (en) | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| GB0426036D0 (en) * | 2004-11-26 | 2004-12-29 | Boc Group Plc | Protection of surfaces exposed to charged particles |
| US7211810B2 (en) * | 2004-12-29 | 2007-05-01 | Asml Netherlands B.V. | Method for the protection of an optical element, lithographic apparatus, and device manufacturing method |
| US7701554B2 (en) | 2004-12-29 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and optical component |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7365349B2 (en) * | 2005-06-27 | 2008-04-29 | Cymer, Inc. | EUV light source collector lifetime improvements |
| US7141806B1 (en) * | 2005-06-27 | 2006-11-28 | Cymer, Inc. | EUV light source collector erosion mitigation |
| US7561247B2 (en) * | 2005-08-22 | 2009-07-14 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
| JP2007214253A (ja) * | 2006-02-08 | 2007-08-23 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の保護方法 |
| JP2007234822A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 露光装置及びその制御方法並びにデバイス製造方法 |
| GB0605725D0 (en) * | 2006-03-23 | 2006-05-03 | Boc Group Plc | Spectral filter repair |
| JP2008263173A (ja) * | 2007-03-16 | 2008-10-30 | Canon Inc | 露光装置 |
| CN101681114B (zh) | 2007-06-12 | 2013-05-08 | 皇家飞利浦电子股份有限公司 | 光学设备和原位处理euv光学部件以增强降低的反射率的方法 |
| JP2009272347A (ja) * | 2008-04-30 | 2009-11-19 | Toshiba Corp | 光反射型マスク、露光装置、測定方法、及び半導体装置の製造方法 |
| DE102008028868A1 (de) * | 2008-06-19 | 2009-12-24 | Carl Zeiss Smt Ag | Optische Baugruppe |
| DE102009043824A1 (de) * | 2009-08-21 | 2011-02-24 | Asml Netherlands B.V. | Reflektives optisches Element und Verfahren zu dessen Herstellung |
| CN108107681A (zh) * | 2016-11-25 | 2018-06-01 | 中国科学院长春光学精密机械与物理研究所 | 一种光刻投影物镜腔体精密监控装置 |
| DE102021212018B3 (de) | 2021-10-25 | 2022-11-10 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage, Verfahren zum Betreiben der Projektionsbelichtungsanlage |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58225636A (ja) * | 1982-06-25 | 1983-12-27 | バッテル・ディベロプメント・コーポレーション | X線を対象物に照射する装置 |
| JPH0682601B2 (ja) * | 1985-12-04 | 1994-10-19 | 株式会社日立製作所 | X線露光装置用ミラ− |
| EP0286306B1 (en) * | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond |
| US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| JP2725295B2 (ja) * | 1988-08-02 | 1998-03-11 | 日本電気株式会社 | シンクロトロン放射光露光装置 |
| WO1991017483A1 (de) * | 1990-05-02 | 1991-11-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Belichtungsvorrichtung |
| JPH04233717A (ja) * | 1990-12-28 | 1992-08-21 | Canon Inc | X線露光装置 |
| US5229872A (en) * | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| JPH0720293A (ja) * | 1993-06-30 | 1995-01-24 | Canon Inc | X線ミラー及びこれを用いたx線露光装置とデバイス製造方法 |
| US5593800A (en) * | 1994-01-06 | 1997-01-14 | Canon Kabushiki Kaisha | Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus |
| JP3599370B2 (ja) * | 1994-05-23 | 2004-12-08 | 日本碍子株式会社 | 水素製造装置 |
| EP0824722B1 (en) * | 1996-03-06 | 2001-07-25 | Asm Lithography B.V. | Differential interferometer system and lithographic step-and-scan apparatus provided with such a system |
| FR2752386B1 (fr) * | 1996-08-14 | 1998-09-11 | Commissariat Energie Atomique | Procede de nettoyage ou de decontamination d'un objet au moyen d'un faisceau laser ultraviolet et dispositif pour sa mise en oeuvre |
| DK0918984T3 (da) * | 1996-08-16 | 2001-10-22 | Zeptosens Ag | Optisk detektionsanordning |
| JPH1090496A (ja) * | 1996-09-19 | 1998-04-10 | Nikon Corp | 反射型光学素子及びこれを用いた反射型光学系 |
| DE69717975T2 (de) * | 1996-12-24 | 2003-05-28 | Asml Netherlands B.V., Veldhoven | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
| JPH10221499A (ja) * | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
| KR20010023314A (ko) * | 1997-08-26 | 2001-03-26 | 오노 시게오 | 노광 장치, 노광 방법, 투영 광학계의 압력 조정 방법 및노광 장치의 조립 방법 |
| JP2000091207A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | 投影露光装置及び投影光学系の洗浄方法 |
| US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
| JP2000173893A (ja) * | 1998-12-04 | 2000-06-23 | Nikon Corp | 投影露光装置及び光学素子の汚染判別方法 |
| US6533952B2 (en) * | 1999-06-08 | 2003-03-18 | Euv Llc | Mitigation of radiation induced surface contamination |
| US6304630B1 (en) * | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
| US6421421B1 (en) * | 2000-05-22 | 2002-07-16 | Plex, Llc | Extreme ultraviolet based on colliding neutral beams |
-
2001
- 2001-08-24 TW TW090120880A patent/TW548524B/zh not_active IP Right Cessation
- 2001-08-31 EP EP01307428A patent/EP1186957B1/en not_active Expired - Lifetime
- 2001-08-31 JP JP2001262809A patent/JP4067078B2/ja not_active Expired - Fee Related
- 2001-08-31 DE DE60127050T patent/DE60127050T2/de not_active Expired - Lifetime
- 2001-08-31 KR KR1020010053082A patent/KR100656582B1/ko not_active Expired - Fee Related
- 2001-09-04 US US09/943,758 patent/US7671965B2/en not_active Expired - Fee Related
-
2007
- 2007-10-29 JP JP2007280355A patent/JP4743440B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382789B (zh) * | 2003-09-11 | 2013-01-11 | Koninkl Philips Electronics Nv | 製造遠紫外線輻射或軟性x射線之方法及裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020051124A1 (en) | 2002-05-02 |
| DE60127050T2 (de) | 2007-12-13 |
| EP1186957A2 (en) | 2002-03-13 |
| DE60127050D1 (de) | 2007-04-19 |
| JP2008098651A (ja) | 2008-04-24 |
| JP2002110539A (ja) | 2002-04-12 |
| JP4067078B2 (ja) | 2008-03-26 |
| KR100656582B1 (ko) | 2006-12-12 |
| EP1186957B1 (en) | 2007-03-07 |
| EP1186957A3 (en) | 2005-02-16 |
| JP4743440B2 (ja) | 2011-08-10 |
| US7671965B2 (en) | 2010-03-02 |
| KR20020018957A (ko) | 2002-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |