KR100656582B1 - 리소그래피 투영장치, 디바이스 제조방법 및 그것에의하여 제조된 디바이스 - Google Patents

리소그래피 투영장치, 디바이스 제조방법 및 그것에의하여 제조된 디바이스 Download PDF

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KR100656582B1
KR100656582B1 KR1020010053082A KR20010053082A KR100656582B1 KR 100656582 B1 KR100656582 B1 KR 100656582B1 KR 1020010053082 A KR1020010053082 A KR 1020010053082A KR 20010053082 A KR20010053082 A KR 20010053082A KR 100656582 B1 KR100656582 B1 KR 100656582B1
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South Korea
Prior art keywords
mirror
radiation
space
cap layer
alcohol
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Expired - Fee Related
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KR1020010053082A
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English (en)
Korean (ko)
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KR20020018957A (ko
Inventor
바니네파딤예프겐예비치
욘커스예로엔
Original Assignee
에이에스엠엘 네델란즈 비.브이.
코닌클리케 필립스 일렉트로닉스 엔.브이.
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Publication of KR20020018957A publication Critical patent/KR20020018957A/ko
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Publication of KR100656582B1 publication Critical patent/KR100656582B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020010053082A 2000-09-04 2001-08-31 리소그래피 투영장치, 디바이스 제조방법 및 그것에의하여 제조된 디바이스 Expired - Fee Related KR100656582B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00307608 2000-09-04
EP00307608.0 2000-09-04

Publications (2)

Publication Number Publication Date
KR20020018957A KR20020018957A (ko) 2002-03-09
KR100656582B1 true KR100656582B1 (ko) 2006-12-12

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KR1020010053082A Expired - Fee Related KR100656582B1 (ko) 2000-09-04 2001-08-31 리소그래피 투영장치, 디바이스 제조방법 및 그것에의하여 제조된 디바이스

Country Status (6)

Country Link
US (1) US7671965B2 (enExample)
EP (1) EP1186957B1 (enExample)
JP (2) JP4067078B2 (enExample)
KR (1) KR100656582B1 (enExample)
DE (1) DE60127050T2 (enExample)
TW (1) TW548524B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4790970B2 (ja) * 2000-12-21 2011-10-12 イーユーヴィー リミテッド リアビリティ コーポレーション 放射線誘起表面汚染の軽減
US6664554B2 (en) * 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
TW200402606A (en) * 2002-06-11 2004-02-16 Nippon Kogaku Kk Exposure system and exposure method
US7050149B2 (en) 2002-06-11 2006-05-23 Nikon Corporation Exposure apparatus and exposure method
SG128447A1 (en) * 2002-09-30 2007-01-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1403715A3 (en) * 2002-09-30 2006-01-18 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10309084A1 (de) * 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
DE10319005A1 (de) 2003-04-25 2004-11-25 Carl Zeiss Smt Ag Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung
DE10321103A1 (de) * 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
US8945310B2 (en) * 2003-05-22 2015-02-03 Koninklijke Philips Electronics N.V. Method and device for cleaning at least one optical component
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
EP1522895B1 (en) * 2003-10-06 2006-11-02 ASML Netherlands B.V. Method of and apparatus for supplying a dynamic protective layer to a mirror
US7208746B2 (en) * 2004-07-14 2007-04-24 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
US7355672B2 (en) 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
GB0426036D0 (en) * 2004-11-26 2004-12-29 Boc Group Plc Protection of surfaces exposed to charged particles
US7211810B2 (en) * 2004-12-29 2007-05-01 Asml Netherlands B.V. Method for the protection of an optical element, lithographic apparatus, and device manufacturing method
US7701554B2 (en) 2004-12-29 2010-04-20 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and optical component
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7141806B1 (en) * 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
US7561247B2 (en) * 2005-08-22 2009-07-14 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
JP2007214253A (ja) * 2006-02-08 2007-08-23 Ushio Inc 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の保護方法
JP2007234822A (ja) * 2006-02-28 2007-09-13 Canon Inc 露光装置及びその制御方法並びにデバイス製造方法
GB0605725D0 (en) * 2006-03-23 2006-05-03 Boc Group Plc Spectral filter repair
JP2008263173A (ja) * 2007-03-16 2008-10-30 Canon Inc 露光装置
CN101681114B (zh) 2007-06-12 2013-05-08 皇家飞利浦电子股份有限公司 光学设备和原位处理euv光学部件以增强降低的反射率的方法
JP2009272347A (ja) * 2008-04-30 2009-11-19 Toshiba Corp 光反射型マスク、露光装置、測定方法、及び半導体装置の製造方法
DE102008028868A1 (de) * 2008-06-19 2009-12-24 Carl Zeiss Smt Ag Optische Baugruppe
DE102009043824A1 (de) * 2009-08-21 2011-02-24 Asml Netherlands B.V. Reflektives optisches Element und Verfahren zu dessen Herstellung
CN108107681A (zh) * 2016-11-25 2018-06-01 中国科学院长春光学精密机械与物理研究所 一种光刻投影物镜腔体精密监控装置
DE102021212018B3 (de) 2021-10-25 2022-11-10 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage, Verfahren zum Betreiben der Projektionsbelichtungsanlage

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225636A (ja) * 1982-06-25 1983-12-27 バッテル・ディベロプメント・コーポレーション Ｘ線を対象物に照射する装置
JPH0682601B2 (ja) * 1985-12-04 1994-10-19 株式会社日立製作所 Ｘ線露光装置用ミラ−
EP0286306B1 (en) * 1987-04-03 1993-10-06 Fujitsu Limited Method and apparatus for vapor deposition of diamond
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JP2725295B2 (ja) * 1988-08-02 1998-03-11 日本電気株式会社 シンクロトロン放射光露光装置
WO1991017483A1 (de) * 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
JPH04233717A (ja) * 1990-12-28 1992-08-21 Canon Inc Ｘ線露光装置
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH0720293A (ja) * 1993-06-30 1995-01-24 Canon Inc Ｘ線ミラー及びこれを用いたｘ線露光装置とデバイス製造方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
JP3599370B2 (ja) * 1994-05-23 2004-12-08 日本碍子株式会社 水素製造装置
EP0824722B1 (en) * 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
FR2752386B1 (fr) * 1996-08-14 1998-09-11 Commissariat Energie Atomique Procede de nettoyage ou de decontamination d'un objet au moyen d'un faisceau laser ultraviolet et dispositif pour sa mise en oeuvre
DK0918984T3 (da) * 1996-08-16 2001-10-22 Zeptosens Ag Optisk detektionsanordning
JPH1090496A (ja) * 1996-09-19 1998-04-10 Nikon Corp 反射型光学素子及びこれを用いた反射型光学系
DE69717975T2 (de) * 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
KR20010023314A (ko) * 1997-08-26 2001-03-26 오노 시게오 노광 장치, 노광 방법, 투영 광학계의 압력 조정 방법 및노광 장치의 조립 방법
JP2000091207A (ja) * 1998-09-14 2000-03-31 Nikon Corp 投影露光装置及び投影光学系の洗浄方法
US6198792B1 (en) * 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
JP2000173893A (ja) * 1998-12-04 2000-06-23 Nikon Corp 投影露光装置及び光学素子の汚染判別方法
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
US6421421B1 (en) * 2000-05-22 2002-07-16 Plex, Llc Extreme ultraviolet based on colliding neutral beams

Also Published As

Publication number Publication date
US20020051124A1 (en) 2002-05-02
TW548524B (en) 2003-08-21
DE60127050T2 (de) 2007-12-13
EP1186957A2 (en) 2002-03-13
DE60127050D1 (de) 2007-04-19
JP2008098651A (ja) 2008-04-24
JP2002110539A (ja) 2002-04-12
JP4067078B2 (ja) 2008-03-26
EP1186957B1 (en) 2007-03-07
EP1186957A3 (en) 2005-02-16
JP4743440B2 (ja) 2011-08-10
US7671965B2 (en) 2010-03-02
KR20020018957A (ko) 2002-03-09

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