JP2008098584A - 半導体装置 - Google Patents
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Abstract
【解決手段】回路基板15上に搭載された半導体チップ1,2の上下に放熱用基板としてそれぞれヒートスプレッダー16,17と放熱用金属ベース板21を配置し、半導体チップ1,2を収容した密閉型のプラスチックケース9内に液体の絶縁油10を充填して封止する。また絶縁油10として、半導体チップ1,2の駆動時の発熱温度より高い高耐熱性を有し、吸湿剤及び、絶縁油10より熱伝導率が高い伝熱粒子が混入されたものを使用する。
【選択図】図1
Description
図1は本発明の第1の実施の形態の半導体装置の構造を示す図であり、(a)は平面図、(b)はそのA−A線断面図である。この半導体装置は、図13に示す半導体装置と同様、半導体素子をチップ化した半導体チップ1,2を有し、外部と接続される外部導出端子3,4及び制御端子5がアルミニウムワイヤなどの金属ワイヤ6,7,8により接続されている。そして、これらが収容された密閉型の樹脂ケースであるプラスチックケース9内に液体である絶縁油10が充填され、この絶縁油10により半導体チップ1,2が封止及び保護されたパッケージ構造となっている。
このフィラー23を注入する工程は、例えば次の2通りのどちらかで行えばよい。
また、ヒーター54、温度制御器55及び上記の真空ポンプを用いて真空加熱を行い、絶縁油10中の揮発性の高い低分子量成分と絶縁油10に混入している初期水分(100〜200ppm)を例えば10ppm以下になるまで除去し、パッケージ内を真空排気する。そして、所定の真空状態になってから切替えバルブ52を切替え、脱ガス処理の終わった上記絶縁油10を真空脱泡しながら接触させて、注入管44a,44b、避難室30a,30b,30c,30dとなる空間部45及び通路28a,28b,28c,28dを通して絶縁油10を大気圧で注入する。
吸湿剤であるフィラー23としては、シリカゲル、ゼオライト、活性アルミナ、などを用いる。使用に当たっては、予め脱ガス処理を行っておく。また、絶縁油10としては、耐熱性、電気絶縁性、高沸点、引火点、粘度、分子量、流動性、耐腐食性などを考慮し、シリコンオイル、フッ素系オイル、変圧器用オイルなどを用いる。
絶縁油10の注入が完了すると、真空ホース51を取り外し、注入管44のケース本体41から突き出た部分を切断する(d)。また、その表面に付着した絶縁油10成分を拭い取って洗浄した後、接着剤を塗布し、その接着面に封止蓋29a,29bを載せて、紫外線もしくは加熱により硬化させる。封止蓋29a,29bの接着は、接着面の全面(封止蓋の外周全域)に接着剤を塗布し、ケース41の内部(空間部等)を気密に封止するものとする。また、封止蓋29a,29bの外部導出端子3,4、制御端子5の貫通部には、封止蓋29a,29bと外部導出端子3,4、制御端子5との間に接着剤を塗布するか図示しないシール部材を設けるなどして、この部分においても気密に封止するものとする。以下の他の実施形態においても同様である。
上記の液体の絶縁油10を充填する図4の空間部43と、絶縁油10の加熱膨張や蒸発などによる体積変化を吸収する避難室30a,30b,30c,30dは、予め形成されており、半導体モジュールを空間部43に接着固定した後(図5の(a)参照)、空間部43と避難室30a,30dにフィラー23を挿入する(図5の(b)参照)。その後、封止蓋29aを接着固定し、注入口27a,27bに注入管44a,44bを接着固定し、予め真空脱ガスしておいた絶縁油10を真空ポンプにより注入する。その際、絶縁油10中の水分濃度は10ppm以下にしておき、真空ホースを注入管44a,44bに接続し、真空排気して所定レベルの真空度に達したら、切替えバルブ52にて真空加熱した絶縁油10を導入し、貯留タンク53に設けたバルブを徐々に開放して大気圧で絶縁油10を圧入する。
図15において、9eは樹脂ケース、29eは封止蓋、30eは避難室、33eはリードフレームである。
絶縁油10を注入する工程は上記の例と同様であるので詳細な説明は省略する。また、避難室は30eの一箇所のみを図示したが、必要に応じて設ければよい。
3,4 外部導出端子
5 制御端子
6,7,8 金属ワイヤ
9 プラスチックケース
10 絶縁油
11 セラミック基板
12,13,14 銅電極
15 回路基板
16,17 ヒートスプレッダー
18,19,20,34,35 半田層
21 放熱用金属ベース板
22 電極端子
23 フィラー
24,24a,24b ねじ穴
25 段差部
26 接着剤
27a,27b 注入口
28a,28b,28c,28d 通路
29,29a,29b 封止蓋
30a,30b,30c,30d 避難室
31,32 電極
33 リードフレーム
44a,44b 注入管
Claims (8)
- 半導体素子が密閉型の樹脂ケース内に収容された半導体装置において、
前記半導体素子が収容された前記樹脂ケース内に絶縁油を充填して封止したことを特徴とする半導体装置。 - 前記絶縁油は、前記半導体素子の駆動時の発熱温度より高い高耐熱性を有していることを特徴とする請求項1記載の半導体装置。
- 前記絶縁油は、吸湿剤が混入されていることを特徴とする請求項1記載の半導体装置。
- 前記絶縁油は、該絶縁油より熱伝導率が高い伝熱粒子が混入されていることを特徴とする請求項1記載の半導体装置。
- 前記伝熱粒子は、少なくとも前記半導体素子を覆う領域において、隣接する伝熱粒子同士が接触することを特徴とする請求項4記載の半導体装置。
- 前記絶縁油は、加熱によりガス成分が除去されていることを特徴とする請求項1記載の半導体装置。
- 前記樹脂ケースは、前記絶縁油の熱膨張を吸収する避難室を有していることを特徴とする請求項1記載の半導体装置。
- 前記樹脂ケースは、前記絶縁油が注入された後に封止するための封止蓋を備えていることを特徴とする請求項1記載の半導体装置。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206142A (ja) * | 2009-03-06 | 2010-09-16 | Fujitsu Ltd | 電子部品及びその製造方法 |
WO2013089492A1 (ko) * | 2011-12-14 | 2013-06-20 | 주식회사 지앤씨 | 전자 부품 방열 모듈 및 이에 사용되는 방열액 |
CN109273421A (zh) * | 2018-09-17 | 2019-01-25 | 威海银创微电子技术有限公司 | Igbt模块 |
WO2022209609A1 (ja) * | 2021-03-31 | 2022-10-06 | 住友電気工業株式会社 | 半導体装置 |
US11749857B2 (en) | 2018-12-20 | 2023-09-05 | Lg Energy Solution, Ltd. | Heat-radiating fluid composition and battery module comprising the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4524263Y1 (ja) * | 1967-05-15 | 1970-09-24 | ||
JPS5362148A (en) * | 1976-11-16 | 1978-06-03 | Mitsubishi Electric Corp | Abnormal voltage protecting device |
JPH10173098A (ja) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | パワー半導体装置およびその製法 |
JP2000183277A (ja) * | 1998-12-17 | 2000-06-30 | Toshiba Corp | 半導体装置 |
JP2001250910A (ja) * | 2000-03-03 | 2001-09-14 | Mitsubishi Electric Corp | パワーモジュール |
-
2006
- 2006-10-16 JP JP2006281693A patent/JP5098284B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4524263Y1 (ja) * | 1967-05-15 | 1970-09-24 | ||
JPS5362148A (en) * | 1976-11-16 | 1978-06-03 | Mitsubishi Electric Corp | Abnormal voltage protecting device |
JPH10173098A (ja) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | パワー半導体装置およびその製法 |
JP2000183277A (ja) * | 1998-12-17 | 2000-06-30 | Toshiba Corp | 半導体装置 |
JP2001250910A (ja) * | 2000-03-03 | 2001-09-14 | Mitsubishi Electric Corp | パワーモジュール |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206142A (ja) * | 2009-03-06 | 2010-09-16 | Fujitsu Ltd | 電子部品及びその製造方法 |
WO2013089492A1 (ko) * | 2011-12-14 | 2013-06-20 | 주식회사 지앤씨 | 전자 부품 방열 모듈 및 이에 사용되는 방열액 |
KR101336987B1 (ko) * | 2011-12-14 | 2013-12-16 | (주) 사람과나눔 | 전자 부품 방열 모듈 및 이에 사용되는 방열액 |
CN109273421A (zh) * | 2018-09-17 | 2019-01-25 | 威海银创微电子技术有限公司 | Igbt模块 |
US11749857B2 (en) | 2018-12-20 | 2023-09-05 | Lg Energy Solution, Ltd. | Heat-radiating fluid composition and battery module comprising the same |
WO2022209609A1 (ja) * | 2021-03-31 | 2022-10-06 | 住友電気工業株式会社 | 半導体装置 |
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