JP5256128B2 - 電子回路封入装置 - Google Patents
電子回路封入装置 Download PDFInfo
- Publication number
- JP5256128B2 JP5256128B2 JP2009144850A JP2009144850A JP5256128B2 JP 5256128 B2 JP5256128 B2 JP 5256128B2 JP 2009144850 A JP2009144850 A JP 2009144850A JP 2009144850 A JP2009144850 A JP 2009144850A JP 5256128 B2 JP5256128 B2 JP 5256128B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- multilayer wiring
- base member
- electronic circuit
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
2 ベース部材
3 封止樹脂
4 多層配線基板
5 電子部品
6 接着剤
21 フランジ部
22 ターミナル部
23 開口窓部
24 橋渡し部
24a 接着面
25 台座部
26 樹脂止め用タイバー
27 外枠
40 導体
41 サーマルビア
42 反り面
43 パッド
51 チップ部品
52 パッケージ部品
53 細線ワイヤ
Claims (4)
- チップ部品とパッケージ部品を混載した電子部品を両面に搭載した多層配線基板と、
前記多層配線基板との接着部と複数のターミナル部を備えたベース部材と、
前記接着部は前記電子部品と干渉しない窓部を設け、
前記多層配線基板の上に前記ベース部材を接着し、前記多層配線基板と前記ターミナル部は細線ワイヤで電気的に接続され、前記ターミナル部の一部を露出させるよう封止材で覆った電子回路封入装置において、
前記ベース部材の窓部の一部に橋渡し部を設け、前記多層配線基板は、前記封止材で覆う前に半円弧状の反り面を設けており、前記反り面は導体を片面側に多く配置して成形し、前記反り面に前記橋渡し部を接着し、前記反り面と前記橋渡し部との接着層を、前記反り面と前記ベース部材の前記橋渡し部以外の箇所との接着層よりも薄くした特徴とする電子回路封入装置。 - 請求項1において、
前記ベース部材の前記橋渡し部と接着する前記多層配線基板に、サーマルビアを配置し
、前記橋渡し部の真裏面側に発熱する電子部品を搭載する特徴とする電子回路封入装置。 - 請求項1または2において、
前記ベース部材の前記橋渡し部の上に、発熱する電子部品を搭載する特徴とする電子回
路封入装置。 - 請求項1から3のいずれかにおいて、
前記多層配線基板の片面側に前記細線ワイヤと接続する前記導体のパッドを配置した特
徴とする電子回路封入装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009144850A JP5256128B2 (ja) | 2009-06-18 | 2009-06-18 | 電子回路封入装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009144850A JP5256128B2 (ja) | 2009-06-18 | 2009-06-18 | 電子回路封入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011003680A JP2011003680A (ja) | 2011-01-06 |
JP5256128B2 true JP5256128B2 (ja) | 2013-08-07 |
Family
ID=43561420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009144850A Expired - Fee Related JP5256128B2 (ja) | 2009-06-18 | 2009-06-18 | 電子回路封入装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5256128B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5441956B2 (ja) * | 2011-05-26 | 2014-03-12 | 三菱電機株式会社 | 樹脂封止形電子制御装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158171A (en) * | 1978-06-02 | 1979-12-13 | Nec Corp | Resin-sealed type semiconductor device |
JPH01181450A (ja) * | 1988-01-11 | 1989-07-19 | Hitachi Ltd | 樹脂封止型半導体装置 |
JP2531817B2 (ja) * | 1990-02-07 | 1996-09-04 | 株式会社東芝 | 樹脂封止型半導体装置 |
JPH0831545B2 (ja) * | 1992-03-24 | 1996-03-27 | 日本碍子株式会社 | 電子装置用セラミックスパッケージ及び電子装置 |
JPH0661372A (ja) * | 1992-08-11 | 1994-03-04 | Toshiba Corp | ハイブリッドic |
JPH06310633A (ja) * | 1993-04-21 | 1994-11-04 | Hitachi Ltd | 半導体装置 |
JP3550100B2 (ja) * | 2001-03-06 | 2004-08-04 | 株式会社日立製作所 | 自動車用電子回路装置及びそのパッケージ製造方法 |
JP2006100752A (ja) * | 2004-09-30 | 2006-04-13 | Sanyo Electric Co Ltd | 回路装置およびその製造方法 |
JP2007266386A (ja) * | 2006-03-29 | 2007-10-11 | Denso Corp | 電子装置 |
JP4244235B2 (ja) * | 2006-10-10 | 2009-03-25 | 株式会社日立製作所 | 電子回路装置 |
-
2009
- 2009-06-18 JP JP2009144850A patent/JP5256128B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011003680A (ja) | 2011-01-06 |
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