JP2008016733A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2008016733A JP2008016733A JP2006188530A JP2006188530A JP2008016733A JP 2008016733 A JP2008016733 A JP 2008016733A JP 2006188530 A JP2006188530 A JP 2006188530A JP 2006188530 A JP2006188530 A JP 2006188530A JP 2008016733 A JP2008016733 A JP 2008016733A
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- 238000003384 imaging method Methods 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】固体撮像装置1は、半導体基板10、受光部14、および遮光膜20を備えている。固体撮像装置1は、裏面入射型であり、半導体基板10の裏面S2に入射した被撮像体からの光を半導体基板10の内部で光電変換し、その光電変換により発生した電荷を受光部14で受けて当該被撮像体を撮像する。受光部14は、半導体基板10と共にPN接合ダイオードを構成している。半導体基板10の表面S1側には、受光部14を覆うように遮光膜20が設けられている。この遮光膜20は、固体撮像装置1の外部から上記表面S1に入射しようとする光を遮るものである。
【選択図】図1
Description
(第1実施形態)
(第2実施形態)
(第3実施形態)
2 固体撮像装置
3 固体撮像装置
10 半導体基板
12 P型ウエル領域
14 受光部
20 遮光膜
30 配線層
32,34,36 配線
42 ゲート絶縁膜
44 ゲート電極
46 N型不純物拡散層
48 N型不純物拡散層
50 ソースフォロアアンプ
58 出力端子
62 素子分離領域
64 配線
52 選択スイッチ用FET
54 検出用FET
56 負荷用FET
S1 表面
S2 裏面
Claims (11)
- 半導体基板の裏面に入射した光を光電変換することにより被撮像体を撮像する固体撮像装置であって、
前記半導体基板中に設けられ、当該半導体基板と共にPN接合ダイオードを構成し、前記光電変換により生じた信号電荷を受ける受光部と、
前記半導体基板の表面側に前記受光部を覆うように設けられ、当該固体撮像装置の外部から前記表面に入射しようとする光を遮る遮光膜と、
を備えることを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、
前記遮光膜は、前記受光部が設けられた領域の全体を覆っている固体撮像装置。 - 請求項2に記載の固体撮像装置において、
前記遮光膜は、前記半導体基板の前記表面の略全体を覆っている固体撮像装置。 - 請求項1乃至3いずれかに記載の固体撮像装置において、
前記半導体基板の前記表面上に設けられ、配線を含む配線層を備え、
前記遮光膜は、前記配線と同一の材料によって形成されている固体撮像装置。 - 請求項4に記載の固体撮像装置において、
前記遮光膜は、前記配線層中に設けられている固体撮像装置。 - 請求項5に記載の固体撮像装置において、
前記遮光膜は、前記配線の一部である固体撮像装置。 - 請求項1乃至6いずれかに記載の固体撮像装置において、
前記半導体基板の前記裏面は、前記被撮像体が直接に接触する面である固体撮像装置。 - 請求項1乃至7いずれかに記載の固体撮像装置において、
前記被撮像体は、指である固体撮像装置。 - 請求項1乃至8いずれかに記載の固体撮像装置において、
前記受光部は、第1の不純物拡散層である固体撮像装置。 - 請求項9に記載の固体撮像装置において、
前記半導体基板の前記表面上に、前記受光部と隣接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記ゲート絶縁膜および前記ゲート電極を挟んで、前記受光部の反対側に設けられた第2の不純物拡散層と、を備え、
前記受光部、前記ゲート絶縁膜、前記ゲート電極および前記第2の不純物拡散層は、電界効果トランジスタを構成している固体撮像装置。 - 請求項9に記載の固体撮像装置において、
前記半導体基板中に、前記受光部と隣接して設けられた第2の不純物拡散層と、
前記半導体基板の前記表面上に、前記第2の不純物拡散層と隣接して設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記ゲート絶縁膜および前記ゲート電極を挟んで、前記第2の不純物拡散層の反対側に設けられた第3の不純物拡散層と、を備え、
前記第2の不純物拡散層、前記ゲート絶縁膜、前記ゲート電極および前記第3の不純物拡散層は、電界効果トランジスタを構成している固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006188530A JP4976765B2 (ja) | 2006-07-07 | 2006-07-07 | 固体撮像装置 |
US11/774,039 US7939825B2 (en) | 2006-07-07 | 2007-07-06 | Solid-state image pickup device |
CN2007101286275A CN101110440B (zh) | 2006-07-07 | 2007-07-09 | 固态成像装置 |
US13/078,676 US9159759B2 (en) | 2006-07-07 | 2011-04-01 | Solid-state image pickup device |
Applications Claiming Priority (1)
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JP2006188530A JP4976765B2 (ja) | 2006-07-07 | 2006-07-07 | 固体撮像装置 |
Related Child Applications (1)
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JP2011281281A Division JP5432979B2 (ja) | 2011-12-22 | 2011-12-22 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008016733A true JP2008016733A (ja) | 2008-01-24 |
JP4976765B2 JP4976765B2 (ja) | 2012-07-18 |
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JP2006188530A Active JP4976765B2 (ja) | 2006-07-07 | 2006-07-07 | 固体撮像装置 |
Country Status (3)
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US (2) | US7939825B2 (ja) |
JP (1) | JP4976765B2 (ja) |
CN (1) | CN101110440B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009290000A (ja) * | 2008-05-29 | 2009-12-10 | Toshiba Corp | 固体撮像装置 |
WO2010131534A1 (en) * | 2009-05-12 | 2010-11-18 | Canon Kabushiki Kaisha | Solid-state image sensing apparatus |
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JPS5956766A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 固体撮像素子 |
JPH05218374A (ja) * | 1992-01-31 | 1993-08-27 | Canon Inc | 光電変換装置 |
JP2000012819A (ja) * | 1998-06-17 | 2000-01-14 | Nikon Corp | 固体撮像素子 |
JP2000252452A (ja) * | 1999-02-24 | 2000-09-14 | Nec Corp | 固体撮像装置 |
JP2002033469A (ja) * | 2000-07-17 | 2002-01-31 | Nec Corp | 固体撮像装置 |
JP2003264279A (ja) * | 2002-03-12 | 2003-09-19 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
JP2003273343A (ja) * | 2002-03-19 | 2003-09-26 | Sony Corp | 固体撮像素子の製造方法 |
JP2003303948A (ja) * | 2002-04-10 | 2003-10-24 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2006120805A (ja) * | 2004-10-20 | 2006-05-11 | Sony Corp | 固体撮像素子 |
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-
2006
- 2006-07-07 JP JP2006188530A patent/JP4976765B2/ja active Active
-
2007
- 2007-07-06 US US11/774,039 patent/US7939825B2/en active Active
- 2007-07-09 CN CN2007101286275A patent/CN101110440B/zh not_active Expired - Fee Related
-
2011
- 2011-04-01 US US13/078,676 patent/US9159759B2/en not_active Expired - Fee Related
Patent Citations (9)
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JPS5956766A (ja) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | 固体撮像素子 |
JPH05218374A (ja) * | 1992-01-31 | 1993-08-27 | Canon Inc | 光電変換装置 |
JP2000012819A (ja) * | 1998-06-17 | 2000-01-14 | Nikon Corp | 固体撮像素子 |
JP2000252452A (ja) * | 1999-02-24 | 2000-09-14 | Nec Corp | 固体撮像装置 |
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JP2003273343A (ja) * | 2002-03-19 | 2003-09-26 | Sony Corp | 固体撮像素子の製造方法 |
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JP2009290000A (ja) * | 2008-05-29 | 2009-12-10 | Toshiba Corp | 固体撮像装置 |
WO2010131534A1 (en) * | 2009-05-12 | 2010-11-18 | Canon Kabushiki Kaisha | Solid-state image sensing apparatus |
JP2010267680A (ja) * | 2009-05-12 | 2010-11-25 | Canon Inc | 固体撮像装置 |
CN102396066A (zh) * | 2009-05-12 | 2012-03-28 | 佳能株式会社 | 固态摄像设备 |
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US8653617B2 (en) | 2009-05-12 | 2014-02-18 | Canon Kabushiki Kaisha | Solid-state image sensing apparatus |
CN102396066B (zh) * | 2009-05-12 | 2014-06-04 | 佳能株式会社 | 固态摄像设备 |
Also Published As
Publication number | Publication date |
---|---|
US9159759B2 (en) | 2015-10-13 |
US20080006896A1 (en) | 2008-01-10 |
US20110175186A1 (en) | 2011-07-21 |
JP4976765B2 (ja) | 2012-07-18 |
CN101110440B (zh) | 2010-06-16 |
US7939825B2 (en) | 2011-05-10 |
CN101110440A (zh) | 2008-01-23 |
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