JP2008010802A - 低ホットキャリア効果を具えた半導体構造 - Google Patents

低ホットキャリア効果を具えた半導体構造 Download PDF

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Publication number
JP2008010802A
JP2008010802A JP2006236148A JP2006236148A JP2008010802A JP 2008010802 A JP2008010802 A JP 2008010802A JP 2006236148 A JP2006236148 A JP 2006236148A JP 2006236148 A JP2006236148 A JP 2006236148A JP 2008010802 A JP2008010802 A JP 2008010802A
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JP
Japan
Prior art keywords
layer
hot carrier
carrier effect
semiconductor
low hot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006236148A
Other languages
English (en)
Japanese (ja)
Inventor
Chiung-Wei Lin
烱▲い▼ 林
Chien-Feng Lee
建鋒 李
Yi-Liang Chen
易良 陳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatung Co Ltd
Original Assignee
Tatung Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatung Co Ltd filed Critical Tatung Co Ltd
Publication of JP2008010802A publication Critical patent/JP2008010802A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006236148A 2006-06-26 2006-08-31 低ホットキャリア効果を具えた半導体構造 Pending JP2008010802A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095122927A TW200802858A (en) 2006-06-26 2006-06-26 Structure of semiconductor with low heat carrier effect

Publications (1)

Publication Number Publication Date
JP2008010802A true JP2008010802A (ja) 2008-01-17

Family

ID=38872732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006236148A Pending JP2008010802A (ja) 2006-06-26 2006-08-31 低ホットキャリア効果を具えた半導体構造

Country Status (4)

Country Link
US (1) US20070295958A1 (enExample)
JP (1) JP2008010802A (enExample)
KR (1) KR20070122353A (enExample)
TW (1) TW200802858A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872685B (zh) * 2019-04-04 2020-12-25 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243574A (ja) * 1992-02-27 1993-09-21 Kyocera Corp 半導体装置
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH10270701A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 薄膜トランジスタおよびその製法
JP2004304140A (ja) * 2003-03-31 2004-10-28 Ind Technol Res Inst 薄膜トランジスタとその製造方法
JP2006041457A (ja) * 2004-07-27 2006-02-09 Au Optronics Corp 薄膜トランジスター構造及び製作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011849A (ja) * 1983-06-21 1985-01-22 Sanyo Electric Co Ltd 静電潜像担持体
US5128729A (en) * 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
JP3344072B2 (ja) * 1994-03-31 2002-11-11 ソニー株式会社 薄膜トランジスタの製造方法
US5418391A (en) * 1994-03-31 1995-05-23 Vlsi Technology, Inc. Semiconductor-on-insulator integrated circuit with selectively thinned channel region
JP3486240B2 (ja) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
US5793072A (en) * 1996-02-28 1998-08-11 International Business Machines Corporation Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor
US5834071A (en) * 1997-02-11 1998-11-10 Industrial Technology Research Institute Method for forming a thin film transistor
KR100269518B1 (ko) * 1997-12-29 2000-10-16 구본준 박막트랜지스터 제조방법
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
US20070042536A1 (en) * 2005-08-17 2007-02-22 Chi-Wen Chen Thin film transistor and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243574A (ja) * 1992-02-27 1993-09-21 Kyocera Corp 半導体装置
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH10270701A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 薄膜トランジスタおよびその製法
JP2004304140A (ja) * 2003-03-31 2004-10-28 Ind Technol Res Inst 薄膜トランジスタとその製造方法
JP2006041457A (ja) * 2004-07-27 2006-02-09 Au Optronics Corp 薄膜トランジスター構造及び製作方法

Also Published As

Publication number Publication date
TW200802858A (en) 2008-01-01
KR20070122353A (ko) 2007-12-31
TWI315101B (enExample) 2009-09-21
US20070295958A1 (en) 2007-12-27

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