TWI315101B - - Google Patents

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Publication number
TWI315101B
TWI315101B TW095122927A TW95122927A TWI315101B TW I315101 B TWI315101 B TW I315101B TW 095122927 A TW095122927 A TW 095122927A TW 95122927 A TW95122927 A TW 95122927A TW I315101 B TWI315101 B TW I315101B
Authority
TW
Taiwan
Prior art keywords
layer
transistor
semiconductor layer
metal layer
gate
Prior art date
Application number
TW095122927A
Other languages
English (en)
Chinese (zh)
Other versions
TW200802858A (en
Inventor
Yi Liang Chen
Original Assignee
Tatung Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatung Co Ltd filed Critical Tatung Co Ltd
Priority to TW095122927A priority Critical patent/TW200802858A/zh
Priority to JP2006236148A priority patent/JP2008010802A/ja
Priority to US11/656,988 priority patent/US20070295958A1/en
Priority to KR1020070009516A priority patent/KR20070122353A/ko
Publication of TW200802858A publication Critical patent/TW200802858A/zh
Application granted granted Critical
Publication of TWI315101B publication Critical patent/TWI315101B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095122927A 2006-06-26 2006-06-26 Structure of semiconductor with low heat carrier effect TW200802858A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW095122927A TW200802858A (en) 2006-06-26 2006-06-26 Structure of semiconductor with low heat carrier effect
JP2006236148A JP2008010802A (ja) 2006-06-26 2006-08-31 低ホットキャリア効果を具えた半導体構造
US11/656,988 US20070295958A1 (en) 2006-06-26 2007-01-24 Semiconductor structure having a low hot-carrier effect characteristic
KR1020070009516A KR20070122353A (ko) 2006-06-26 2007-01-30 낮은 핫-캐리어 효과 특성을 갖는 반도체 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095122927A TW200802858A (en) 2006-06-26 2006-06-26 Structure of semiconductor with low heat carrier effect

Publications (2)

Publication Number Publication Date
TW200802858A TW200802858A (en) 2008-01-01
TWI315101B true TWI315101B (enExample) 2009-09-21

Family

ID=38872732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122927A TW200802858A (en) 2006-06-26 2006-06-26 Structure of semiconductor with low heat carrier effect

Country Status (4)

Country Link
US (1) US20070295958A1 (enExample)
JP (1) JP2008010802A (enExample)
KR (1) KR20070122353A (enExample)
TW (1) TW200802858A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872685B (zh) * 2019-04-04 2020-12-25 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011849A (ja) * 1983-06-21 1985-01-22 Sanyo Electric Co Ltd 静電潜像担持体
US5128729A (en) * 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
JP2851741B2 (ja) * 1992-02-27 1999-01-27 京セラ株式会社 半導体装置
JP3344072B2 (ja) * 1994-03-31 2002-11-11 ソニー株式会社 薄膜トランジスタの製造方法
US5418391A (en) * 1994-03-31 1995-05-23 Vlsi Technology, Inc. Semiconductor-on-insulator integrated circuit with selectively thinned channel region
JP3486240B2 (ja) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
US5793072A (en) * 1996-02-28 1998-08-11 International Business Machines Corporation Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor
US5834071A (en) * 1997-02-11 1998-11-10 Industrial Technology Research Institute Method for forming a thin film transistor
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH10270701A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 薄膜トランジスタおよびその製法
KR100269518B1 (ko) * 1997-12-29 2000-10-16 구본준 박막트랜지스터 제조방법
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
US20070042536A1 (en) * 2005-08-17 2007-02-22 Chi-Wen Chen Thin film transistor and method for manufacturing the same

Also Published As

Publication number Publication date
JP2008010802A (ja) 2008-01-17
TW200802858A (en) 2008-01-01
KR20070122353A (ko) 2007-12-31
US20070295958A1 (en) 2007-12-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees