JP2008004911A - 薄膜パターンの製造装置及び方法 - Google Patents
薄膜パターンの製造装置及び方法 Download PDFInfo
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Abstract
【解決手段】本発明によるブランケットが巻回されたロール状の印刷ローラ装置と、前記印刷ローラ装置の周辺に位置し、前記ブランケットにエッチングレジスト溶液を噴射する噴射装置と、所望の薄膜状の溝と、前記溝を除いた突出部が形成された凹版印刷版とを備え、前記エッチングレジスト溶液は、エチレンオキサイドフルオリネートポリマー系物質を含む界面活性剤と、を含む。
【選択図】図5
Description
まず、図1に示されているリバースレジストプリンティング装置は、ポリジメチルシロキサン(PDMS)からなるブランケット15が巻回されたロール状の印刷ローラ装置10と、エッチングレジスト溶液が噴射されるエッチングレジスト溶液噴射装置12と、形成しようとする薄膜パターンと同様の形状の溝20aと、溝20aを除いた突出部20bを有する凹版印刷版20を備える。
以下、図3ないし図5を参照し、本発明の望ましい実施例について説明する。
図3を参照すれば、ブランケット15の上にコーティングされたエッチングレジスト溶液14aの内部構造において、界面活性剤の親水性基22の殆どは、低い表面エネルギーを有するブランケット15方向に向け、界面活性剤の疎水性基23に当たるフルオリネート基は、空気の方に向ける構造を有している。ここで、表面エネルギー(γ)とは、空気と界面を成すために必要なエネルギーを言い、表面エネルギー(γ)が高い物質は、空気と界面を成すことが困難であり、自分と接触する液状または固形状などの相対面の表面エネルギー(γ)が低いほど相手面と界面を成そうとする性質が強い。即ち、表面エネルギー(γ)が高い物質は、その表面に表面エネルギー(γ)が低い流動性物質が塗布されると、その流動性物質を広く広げる。また、表面エネルギー(γ)が低い物質は、相手物質と界面を成すことが容易でないため、相手物質との分離が容易であり、空気との接触性質が強い。このような表面エネルギー(γ)は、数式1のように、非極性表面エネルギー(γd)と、極性表面エネルギー(γp)との和で表される。
[数式1]
γ =γd +γp
[数式2]
W=2(γd1*γd2)1/2+2(γp1*γp2)1/2
図5を参照すると、ブランケット15の上にコーティングされたエッチングレジスト溶液14aの内部構造において、界面活性剤は、疎水性基23に当たるフルオリネート基とハイドロカーボン鎖に区分される。ここで、ハイドロカーボン鎖としては、例えば、エチレンオキサイド(CH2O)、アミン(CH2N)などが挙げられる。このような構造を有する本発明における界面活性剤は、部分的にフルオリネート化された界面活性剤であって、界面活性剤そのものの表面エネルギーが、高分子鎖に似た表面エネルギー(約35mN/m)を有するため、如何なる方向性を有せずにランダムに位置することとなる。
12:噴射装置
20:印刷版
14a:エッチングレジスト溶液
30:基板
15:ブランケット
Claims (12)
- ブランケットが巻回されたロール状の印刷ローラ装置と、
前記印刷ローラ装置の周辺に位置し、前記ブランケットにエッチングレジスト溶液を噴射する噴射装置と、
所望の薄膜状の溝と、前記溝を除いた突出部が形成された凹版印刷版とを備え、前記エッチングレジスト溶液は、エチレンオキサイドフルオリネートポリマー系物質を含む界面活性剤と、を含むことを特徴とする薄膜パターンの製造装置。 - 前記エチレンオキサイドフルオリネートポリマー系物質は、CF3(CF2)4(CH2CH2O)10又はCF3(CF2)5(CH2CH2O)14のいずれか一つであることを特徴とする請求項1に記載の薄膜パターンの製造装置。
- 前記エッチングレジスト溶液は、4〜20%程度のベースポリマーと、40〜60%程度のキャリアソルベントと、20〜40%程度のプリンティングソルベント及び0.05〜1%程度の前記界面活性剤と、を含むことを特徴とする請求項1に記載の薄膜パターンの製造装置。
- 前記界面活性剤は、ハイドロカーボン及びフルオリネート基の分子構造を含み、前記ハイドロカーボン及びフルオリネート基の分子は、前記エッチングレジスト溶液内でランダムに分布することを特徴とする請求項1に記載の薄膜パターンの製造装置。
- 前記ハイドロカーボン系分子は、エチレンオキサイド(C2H4O)及びアミン(CH2N)の少なくともいずれか一つであることを特徴とする請求項4に記載の薄膜パターンの製造装置。
- 前記エッチングレジスト溶液と印刷版との接着力は、前記エッチングレジスト溶液とブランケットとの接着力より強いことを特徴とする請求項4に記載の薄膜パターンの製造装置。
- 前記ベースポリマーは、ノボラック、PMMA(ポリメチルメタクリレート)の何れか一つであることを特徴とする請求項3に記載の薄膜パターンの製造装置。
- 前記キャリアソルベントは、アルコール系であることを特徴とする請求項3に記載の薄膜パターンの製造装置。
- 前記プリンティングソルベントは、NMP(N−メチルピロリドン)、エチルベンゾエイト、トリイソプロピルベンゼンの少なくとも何れか一つであることを特徴とする請求項3に記載の薄膜パターンの製造装置。
- ブランケットが巻回されたロール状の印刷ローラ装置を設ける段階と、
前記ブランケットに、エチレンオキサイドフルオリネートポリマー系物質からなる界面活性剤を含むエッチングレジスト溶液をコーティングする段階と、
溝と、前記溝を除いた突出部が形成された凹版印刷版を設ける段階と、
前記印刷版の突出部の上のみに前記エッチングレジスト溶液を転写させ、前記溝と対応する領域へのエッチングレジスト溶液は、前記印刷ローラ装置に残留させる段階と、を含むことを特徴とする薄膜パターンの製造方法。 - 前記印刷版の突出部の上に、前記エッチングレジスト溶液を転写させる段階は、前記エッチングレジスト溶液がコーティングされた印刷ローラ装置を回転さ、且つ前記エッチングレジスト溶液を前記突出部の表面に接触させる段階をさらに含むことを特徴とする請求項10に記載の薄膜パターンの製造方法。
- 薄膜層が形成された基板を設ける段階と、
前記印刷ローラ装置に残留するエッチングレジスト溶液を前記薄膜層の上に転写させ、前記印刷版の溝と同様の形状のエッチングレジスト溶液を前記薄膜層の上に形成する段階と、をさらに含むことを特徴とする請求項10に記載の薄膜パターンの製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101833242B (zh) * | 2008-12-24 | 2012-10-24 | 乐金显示有限公司 | 抗蚀剂溶液以及使用该抗蚀剂溶液形成图案的方法 |
KR20160019857A (ko) * | 2014-08-12 | 2016-02-22 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9882082B2 (en) | 2012-11-14 | 2018-01-30 | Sun Chemical Corporation | Compositions and processes for fabrication of rear passivated solar cells |
JP2014226876A (ja) * | 2013-05-24 | 2014-12-08 | ソニー株式会社 | ブランケットおよび印刷方法ならびに表示装置および電子機器の製造方法 |
JP2015159277A (ja) * | 2014-01-23 | 2015-09-03 | パナソニック株式会社 | 電子デバイスの製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001194785A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置 |
JP2001318459A (ja) * | 2000-05-12 | 2001-11-16 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2003015278A (ja) * | 2001-06-29 | 2003-01-15 | Fujifilm Arch Co Ltd | 光硬化性組成物 |
JP2005126608A (ja) * | 2003-10-24 | 2005-05-19 | Mitsumura Printing Co Ltd | 精密パターニング用インキ組成物 |
JP2006037060A (ja) * | 2004-07-30 | 2006-02-09 | Hitachi Chem Co Ltd | 印刷インキ組成物、凸版反転オフセット法、レジストパターンの形成法、電子部品の製造法及び電子部品 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3085907A (en) * | 1958-04-01 | 1963-04-16 | Rohm & Haas | Aqueous polymeric methyl methacrylate compositions for coating cement products and methods for coating such products |
FR2328070A1 (fr) * | 1975-10-17 | 1977-05-13 | Ugine Kuhlmann | Produits anti-tache permettant l'elimination facile des salissures au lavage |
US4752353A (en) * | 1982-09-29 | 1988-06-21 | Corning Glass Works | Method for transfer printing of TV shadow mask resist |
US4808501A (en) * | 1985-10-15 | 1989-02-28 | Polaroid Corporation, Patent Dept. | Method for manufacturing an optical filter |
US5079122A (en) * | 1990-07-03 | 1992-01-07 | Xerox Corporation | Toner compositions with charge enhancing additives |
US5535673A (en) * | 1993-11-03 | 1996-07-16 | Corning Incorporated | Method of printing a color filter |
US5533447A (en) * | 1993-11-03 | 1996-07-09 | Corning Incorporated | Method and apparatus for printing a color filter ink pattern |
TW353158B (en) * | 1994-03-09 | 1999-02-21 | Nat Starch Chem Invest | Aqueous photoresist composition, method for preparing the same and circuit board comprising thereof |
JPH11307633A (ja) * | 1997-11-17 | 1999-11-05 | Sony Corp | 低誘電率膜を有する半導体装置、およびその製造方法 |
US6156860A (en) * | 1997-02-18 | 2000-12-05 | Dainippon Ink And Chemicals, Inc. | Surface active agent containing fluorine and coating compositions using the same |
JPH10330683A (ja) | 1997-05-29 | 1998-12-15 | Dainippon Ink & Chem Inc | 離型性コート剤および其の塗工方法 |
US6037104A (en) * | 1998-09-01 | 2000-03-14 | Micron Display Technology, Inc. | Methods of forming semiconductor devices and methods of forming field emission displays |
US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
JP2000327968A (ja) | 1999-05-21 | 2000-11-28 | Dainippon Ink & Chem Inc | 着色マイクロカプセル分散型水性ジェットインク |
US6472028B1 (en) * | 1999-08-12 | 2002-10-29 | Joseph Frazzitta | Method of producing a high gloss coating on a printed surface |
JP2001269564A (ja) | 2000-03-27 | 2001-10-02 | Dainippon Ink & Chem Inc | フッ素系界面活性剤及びその組成物 |
KR100437475B1 (ko) * | 2001-04-13 | 2004-06-23 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치용 표시 소자 제조 방법 |
JP2004006325A (ja) * | 2002-04-26 | 2004-01-08 | Oce Technol Bv | 基礎支持体にコーティング層を自由選択でコーティング模様の形態に形成する方法 |
CN1241054C (zh) * | 2003-01-27 | 2006-02-08 | 奇美电子股份有限公司 | 半透半反式薄膜晶体管液晶显示面板及其制造方法 |
JP2004286795A (ja) | 2003-03-19 | 2004-10-14 | Konica Minolta Holdings Inc | 熱現像写真感光材料 |
US7199090B2 (en) | 2003-09-29 | 2007-04-03 | Ethena Healthcare Inc. | High alcohol content gel-like and foaming compositions comprising an alcohol and fluorosurfactant |
JP4768977B2 (ja) | 2004-09-14 | 2011-09-07 | 株式会社リコー | インクジェット記録装置及びインクジェット記録方法 |
CN1313876C (zh) * | 2005-01-19 | 2007-05-02 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器的像素结构的制造方法 |
JP2007203544A (ja) * | 2006-01-31 | 2007-08-16 | Ricoh Co Ltd | 記録方法および印刷物 |
-
2006
- 2006-06-23 KR KR1020060056739A patent/KR101264688B1/ko active IP Right Grant
- 2006-12-08 CN CN2006101688635A patent/CN101093349B/zh not_active Expired - Fee Related
- 2006-12-08 FR FR0610708A patent/FR2902925B1/fr not_active Expired - Fee Related
- 2006-12-15 JP JP2006338497A patent/JP4921948B2/ja not_active Expired - Fee Related
- 2006-12-15 US US11/639,282 patent/US20070295688A1/en not_active Abandoned
-
2011
- 2011-04-28 US US13/096,614 patent/US9091873B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001194785A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置 |
JP2001318459A (ja) * | 2000-05-12 | 2001-11-16 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2003015278A (ja) * | 2001-06-29 | 2003-01-15 | Fujifilm Arch Co Ltd | 光硬化性組成物 |
JP2005126608A (ja) * | 2003-10-24 | 2005-05-19 | Mitsumura Printing Co Ltd | 精密パターニング用インキ組成物 |
JP2006037060A (ja) * | 2004-07-30 | 2006-02-09 | Hitachi Chem Co Ltd | 印刷インキ組成物、凸版反転オフセット法、レジストパターンの形成法、電子部品の製造法及び電子部品 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101833242B (zh) * | 2008-12-24 | 2012-10-24 | 乐金显示有限公司 | 抗蚀剂溶液以及使用该抗蚀剂溶液形成图案的方法 |
KR20160019857A (ko) * | 2014-08-12 | 2016-02-22 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
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FR2902925B1 (fr) | 2011-06-10 |
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US20110206847A1 (en) | 2011-08-25 |
KR20070121910A (ko) | 2007-12-28 |
FR2902925A1 (fr) | 2007-12-28 |
JP4921948B2 (ja) | 2012-04-25 |
KR101264688B1 (ko) | 2013-05-16 |
US20070295688A1 (en) | 2007-12-27 |
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