JP2007535694A - 透過率を調整することができる埋込減衰型位相シフトマスク - Google Patents

透過率を調整することができる埋込減衰型位相シフトマスク Download PDF

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Publication number
JP2007535694A
JP2007535694A JP2007504104A JP2007504104A JP2007535694A JP 2007535694 A JP2007535694 A JP 2007535694A JP 2007504104 A JP2007504104 A JP 2007504104A JP 2007504104 A JP2007504104 A JP 2007504104A JP 2007535694 A JP2007535694 A JP 2007535694A
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Japan
Prior art keywords
phase shift
layer
substrate
region
embedded
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Pending
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JP2007504104A
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English (en)
Japanese (ja)
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JP2007535694A5 (https=
Inventor
シャオ、クアンミン
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Photronics Inc
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Photronics Inc
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Publication date
Application filed by Photronics Inc filed Critical Photronics Inc
Publication of JP2007535694A publication Critical patent/JP2007535694A/ja
Publication of JP2007535694A5 publication Critical patent/JP2007535694A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007504104A 2004-03-18 2005-03-17 透過率を調整することができる埋込減衰型位相シフトマスク Pending JP2007535694A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/803,847 US7312004B2 (en) 2004-03-18 2004-03-18 Embedded attenuated phase shift mask with tunable transmission
PCT/US2005/008905 WO2005090931A1 (en) 2004-03-18 2005-03-17 Embedded attenuated phase shift mask with tunable transmission

Publications (2)

Publication Number Publication Date
JP2007535694A true JP2007535694A (ja) 2007-12-06
JP2007535694A5 JP2007535694A5 (https=) 2008-05-08

Family

ID=34986706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007504104A Pending JP2007535694A (ja) 2004-03-18 2005-03-17 透過率を調整することができる埋込減衰型位相シフトマスク

Country Status (7)

Country Link
US (1) US7312004B2 (https=)
EP (1) EP1730477A4 (https=)
JP (1) JP2007535694A (https=)
KR (1) KR20070008638A (https=)
CN (1) CN101006329A (https=)
TW (1) TWI270754B (https=)
WO (1) WO2005090931A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010271572A (ja) * 2009-05-22 2010-12-02 Hoya Corp 多階調フォトマスクの製造方法、多階調フォトマスク、及びパターン転写方法
TWI480679B (zh) * 2011-09-30 2015-04-11 Ｈｏｙａ股份有限公司 多灰階光罩、多灰階光罩之製造方法、圖案轉印方法及薄膜電晶體之製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442472B2 (en) * 2004-08-10 2008-10-28 Micron Technology, Inc. Methods of forming reticles
CN1773373B (zh) * 2004-11-08 2010-07-14 中芯国际集成电路制造(上海)有限公司 用于多透射率光掩模结构的镶嵌的方法和所得结构
EP1804119A1 (en) 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Method for manufacturing attenuated phase- shift masks and devices obtained therefrom
US8288081B2 (en) 2007-04-02 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for exposure of a phase shift mask
KR101361130B1 (ko) * 2007-12-26 2014-02-12 삼성전자주식회사 반사형 포토마스크 및 상기 반사형 포토마스크의 층 두께최적화 방법
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
EP2738791B1 (en) 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP2011027878A (ja) * 2009-07-23 2011-02-10 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
CN102129165B (zh) * 2010-01-15 2012-12-05 中芯国际集成电路制造(上海)有限公司 衰减相移掩膜
CN102183874B (zh) * 2011-05-06 2013-03-27 北京理工大学 一种基于边界层模型的三维相移掩膜优化方法
US8959465B2 (en) 2011-12-30 2015-02-17 Intel Corporation Techniques for phase tuning for process optimization
CN110970297B (zh) * 2018-09-29 2024-06-07 长鑫存储技术有限公司 补偿性蚀刻方法及结构、半导体器件及其制备方法
CN112635408B (zh) * 2020-12-21 2022-08-16 上海富乐华半导体科技有限公司 一种dbc基板上铜箔台阶的制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261725B1 (en) * 1999-10-28 2001-07-17 Taiwan Semiconductor Manufacturing Company Phase angle modulation of PSM by chemical treatment method
US6277528B1 (en) * 2000-01-21 2001-08-21 Taiwan Semiconductor Manufacturing Company Method to change transmittance of attenuated phase-shifting masks
US6403267B1 (en) * 2000-01-21 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for high transmittance attenuated phase-shifting mask fabrication
US20020127881A1 (en) * 2001-01-05 2002-09-12 Guangming Xiao Step mask

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480747A (en) * 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
US5618643A (en) 1995-12-15 1997-04-08 Intel Corporation Embedded phase shifting mask with improved relative attenuated film transmission
KR970048985A (ko) 1995-12-26 1997-07-29 김광호 더미 패턴을 가지는 하프톤형 위상 반전 마스크 및 그 제조 방법
US6406818B1 (en) 1999-03-31 2002-06-18 Photronics, Inc. Method of manufacturing photomasks by plasma etching with resist stripped
US6436588B1 (en) 1999-12-20 2002-08-20 Texas Instruments Incorporated Method and system for varying the transmission of an attenuated phase shift mask
US6274281B1 (en) * 1999-12-28 2001-08-14 Taiwan Semiconductor Manufacturing Company Using different transmittance with attenuate phase shift mask (APSM) to compensate ADI critical dimension proximity
US6902851B1 (en) * 2001-03-14 2005-06-07 Advanced Micro Devices, Inc. Method for using phase-shifting mask
US7022436B2 (en) * 2003-01-14 2006-04-04 Asml Netherlands B.V. Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261725B1 (en) * 1999-10-28 2001-07-17 Taiwan Semiconductor Manufacturing Company Phase angle modulation of PSM by chemical treatment method
US6277528B1 (en) * 2000-01-21 2001-08-21 Taiwan Semiconductor Manufacturing Company Method to change transmittance of attenuated phase-shifting masks
US6403267B1 (en) * 2000-01-21 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for high transmittance attenuated phase-shifting mask fabrication
US20020127881A1 (en) * 2001-01-05 2002-09-12 Guangming Xiao Step mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010271572A (ja) * 2009-05-22 2010-12-02 Hoya Corp 多階調フォトマスクの製造方法、多階調フォトマスク、及びパターン転写方法
TWI480679B (zh) * 2011-09-30 2015-04-11 Ｈｏｙａ股份有限公司 多灰階光罩、多灰階光罩之製造方法、圖案轉印方法及薄膜電晶體之製造方法

Also Published As

Publication number Publication date
EP1730477A1 (en) 2006-12-13
US20050208390A1 (en) 2005-09-22
TW200535575A (en) 2005-11-01
EP1730477A4 (en) 2007-05-16
KR20070008638A (ko) 2007-01-17
WO2005090931A1 (en) 2005-09-29
TWI270754B (en) 2007-01-11
CN101006329A (zh) 2007-07-25
US7312004B2 (en) 2007-12-25

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