CN101006329A - 有可调透光率的嵌入式衰减相移掩模 - Google Patents

有可调透光率的嵌入式衰减相移掩模 Download PDF

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Publication number
CN101006329A
CN101006329A CNA2005800130451A CN200580013045A CN101006329A CN 101006329 A CN101006329 A CN 101006329A CN A2005800130451 A CNA2005800130451 A CN A2005800130451A CN 200580013045 A CN200580013045 A CN 200580013045A CN 101006329 A CN101006329 A CN 101006329A
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CN
China
Prior art keywords
phase shift
layer
substrate
shift layer
district
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800130451A
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English (en)
Chinese (zh)
Inventor
肖广明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photronics Inc
Original Assignee
Photronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photronics Inc filed Critical Photronics Inc
Publication of CN101006329A publication Critical patent/CN101006329A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNA2005800130451A 2004-03-18 2005-03-17 有可调透光率的嵌入式衰减相移掩模 Pending CN101006329A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/803,847 2004-03-18
US10/803,847 US7312004B2 (en) 2004-03-18 2004-03-18 Embedded attenuated phase shift mask with tunable transmission

Publications (1)

Publication Number Publication Date
CN101006329A true CN101006329A (zh) 2007-07-25

Family

ID=34986706

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800130451A Pending CN101006329A (zh) 2004-03-18 2005-03-17 有可调透光率的嵌入式衰减相移掩模

Country Status (7)

Country Link
US (1) US7312004B2 (https=)
EP (1) EP1730477A4 (https=)
JP (1) JP2007535694A (https=)
KR (1) KR20070008638A (https=)
CN (1) CN101006329A (https=)
TW (1) TWI270754B (https=)
WO (1) WO2005090931A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102183874A (zh) * 2011-05-06 2011-09-14 北京理工大学 一种基于边界层模型的三维相移掩膜优化方法
CN102129165B (zh) * 2010-01-15 2012-12-05 中芯国际集成电路制造(上海)有限公司 衰减相移掩膜
CN110970297A (zh) * 2018-09-29 2020-04-07 长鑫存储技术有限公司 补偿性蚀刻方法及结构、半导体器件及其制备方法
CN112635408A (zh) * 2020-12-21 2021-04-09 上海富乐华半导体科技有限公司 一种dbc基板上铜箔台阶的制作方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442472B2 (en) * 2004-08-10 2008-10-28 Micron Technology, Inc. Methods of forming reticles
CN1773373B (zh) * 2004-11-08 2010-07-14 中芯国际集成电路制造(上海)有限公司 用于多透射率光掩模结构的镶嵌的方法和所得结构
EP1804119A1 (en) 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Method for manufacturing attenuated phase- shift masks and devices obtained therefrom
US8288081B2 (en) 2007-04-02 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for exposure of a phase shift mask
KR101361130B1 (ko) * 2007-12-26 2014-02-12 삼성전자주식회사 반사형 포토마스크 및 상기 반사형 포토마스크의 층 두께최적화 방법
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
EP2738791B1 (en) 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
JP5410839B2 (ja) * 2009-05-22 2014-02-05 Ｈｏｙａ株式会社 多階調フォトマスクの製造方法、多階調フォトマスク、及びパターン転写方法
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP2011027878A (ja) * 2009-07-23 2011-02-10 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
JP6076593B2 (ja) * 2011-09-30 2017-02-08 Hoya株式会社 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法
US8959465B2 (en) 2011-12-30 2015-02-17 Intel Corporation Techniques for phase tuning for process optimization

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480747A (en) * 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
US5618643A (en) 1995-12-15 1997-04-08 Intel Corporation Embedded phase shifting mask with improved relative attenuated film transmission
KR970048985A (ko) 1995-12-26 1997-07-29 김광호 더미 패턴을 가지는 하프톤형 위상 반전 마스크 및 그 제조 방법
US6406818B1 (en) 1999-03-31 2002-06-18 Photronics, Inc. Method of manufacturing photomasks by plasma etching with resist stripped
US6261725B1 (en) 1999-10-28 2001-07-17 Taiwan Semiconductor Manufacturing Company Phase angle modulation of PSM by chemical treatment method
US6436588B1 (en) 1999-12-20 2002-08-20 Texas Instruments Incorporated Method and system for varying the transmission of an attenuated phase shift mask
US6274281B1 (en) * 1999-12-28 2001-08-14 Taiwan Semiconductor Manufacturing Company Using different transmittance with attenuate phase shift mask (APSM) to compensate ADI critical dimension proximity
US6403267B1 (en) 2000-01-21 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for high transmittance attenuated phase-shifting mask fabrication
US6277528B1 (en) 2000-01-21 2001-08-21 Taiwan Semiconductor Manufacturing Company Method to change transmittance of attenuated phase-shifting masks
US6472766B2 (en) 2001-01-05 2002-10-29 Photronics, Inc. Step mask
US6902851B1 (en) * 2001-03-14 2005-06-07 Advanced Micro Devices, Inc. Method for using phase-shifting mask
US7022436B2 (en) * 2003-01-14 2006-04-04 Asml Netherlands B.V. Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102129165B (zh) * 2010-01-15 2012-12-05 中芯国际集成电路制造(上海)有限公司 衰减相移掩膜
CN102183874A (zh) * 2011-05-06 2011-09-14 北京理工大学 一种基于边界层模型的三维相移掩膜优化方法
CN102183874B (zh) * 2011-05-06 2013-03-27 北京理工大学 一种基于边界层模型的三维相移掩膜优化方法
CN110970297A (zh) * 2018-09-29 2020-04-07 长鑫存储技术有限公司 补偿性蚀刻方法及结构、半导体器件及其制备方法
CN110970297B (zh) * 2018-09-29 2024-06-07 长鑫存储技术有限公司 补偿性蚀刻方法及结构、半导体器件及其制备方法
CN112635408A (zh) * 2020-12-21 2021-04-09 上海富乐华半导体科技有限公司 一种dbc基板上铜箔台阶的制作方法
CN112635408B (zh) * 2020-12-21 2022-08-16 上海富乐华半导体科技有限公司 一种dbc基板上铜箔台阶的制作方法

Also Published As

Publication number Publication date
EP1730477A1 (en) 2006-12-13
US20050208390A1 (en) 2005-09-22
TW200535575A (en) 2005-11-01
EP1730477A4 (en) 2007-05-16
KR20070008638A (ko) 2007-01-17
WO2005090931A1 (en) 2005-09-29
TWI270754B (en) 2007-01-11
JP2007535694A (ja) 2007-12-06
US7312004B2 (en) 2007-12-25

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