JP2007524225A - ウェハプロセス内でのインサイチュ測定を統合するシステム及び方法 - Google Patents
ウェハプロセス内でのインサイチュ測定を統合するシステム及び方法 Download PDFInfo
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- JP2007524225A JP2007524225A JP2006517256A JP2006517256A JP2007524225A JP 2007524225 A JP2007524225 A JP 2007524225A JP 2006517256 A JP2006517256 A JP 2006517256A JP 2006517256 A JP2006517256 A JP 2006517256A JP 2007524225 A JP2007524225 A JP 2007524225A
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- Prior art keywords
- wafer
- proximity head
- proximity
- processing
- surface tension
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
【選択図】11B
Description
Claims (21)
- ウェハを処理する方法であって、
表面張力勾配デバイスによってサポートされるプロセスを前記ウェハに施し、
前記プロセスの結果を監視し、
前記監視の結果を出力する方法。 - 前記プロセスは、洗浄プロセス、リンスプロセス、乾燥プロセス、エッチングプロセス、堆積プロセスおよび電気メッキプロセスによって構成されるプロセス群を少なくとも一つ含み得る、請求項1記載の方法。
- 前記プロセスの前記結果は、インサイチュセンサによって監視される、請求項1記載の方法。
- 前記インサイチュセンサは、光学センサ及び渦電流センサで構成される群を少なくとも一つ含み得る、請求項3記載の方法。
- 前記表面張力勾配デバイスは、近接ヘッドを含み得る、請求項1記載の方法。
- 前記監視の結果は、リアルタイムで出力される、請求項1記載の方法。
- 請求項1に記載の方法は更に、
前記監視の結果に従って前記プロセスを調整する方法。 - 前記監視の結果は、プロセスコントローラへ出力される、請求項1記載の方法。
- 前記プロセスコントローラは、前記監視の結果に従って前記プロセスを調整する、請求項8記載の方法。
- 前記プロセスコントローラは、前記プロセスをリアルタイムで調整する、請求項9記載の方法。
- ウェハ処理システムであって、
プロセスをサポート可能な少なくとも一つの表面張力勾配デバイスと、
前記プロセスの結果を監視するインサイチュセンサと、
前記インサイチュセンサ及び前記表面張力勾配デバイスに結合され、プロセスレシピを含むシステムコントローラと、を備えるウェハ処理システム。 - 前記プロセスは、洗浄プロセス、リンスプロセス、エッチングプロセス、堆積プロセス、および電気メッキプロセスによって構成されるプロセス群を少なくとも一つ含むことが可能である、請求項11記載のシステム。
- 前記インサイチュセンサは、光学センサ及び渦電流センサで構成される群を少なくとも一つ含むことが可能である、請求項11記載のシステム。
- 前記監視の結果は、リアルタイムで出力される、請求項11記載のシステム。
- 前記表面張力勾配デバイスは、近接ヘッドを含む、請求項11記載のシステム。
- 前記プロセスは、前記表面張力勾配デバイスによって支持されたメニスカス内でサポートされる、請求項11記載のシステム。
- 前記インサイチュセンサは、前記表面張力勾配デバイス内に含めることが可能である、請求項16記載のシステム。
- 前記メニスカスは、前記インサイチュセンサを取り囲む乾燥領域を含む、請求項17記載のシステム。
- 前記インサイチュセンサは、前記表面張力勾配デバイスと共に移動可能である、請求項11記載のシステム。
- 前記インサイチュセンサは、前記表面張力勾配デバイスから独立して移動可能である、請求項11記載のシステム。
- ウェハを処理する方法であって、
近接ヘッドによってサポートされるプロセスを前記ウェハに施し、
前記プロセスの結果をインサイチュセンサにより監視し、
前記監視の結果をプロセスコントローラへリアルタイムで出力し、
前記プロセスのレシピを、前記監視の結果に従って、前記プロセスコントローラにおいてリアルタイムで調整する方法
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/606,022 US7252097B2 (en) | 2002-09-30 | 2003-06-24 | System and method for integrating in-situ metrology within a wafer process |
PCT/US2004/018900 WO2005006431A1 (en) | 2003-06-24 | 2004-06-09 | System and method for integrating in-situ metrology within a wafer process |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007524225A true JP2007524225A (ja) | 2007-08-23 |
JP4384662B2 JP4384662B2 (ja) | 2009-12-16 |
Family
ID=34062272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006517256A Expired - Fee Related JP4384662B2 (ja) | 2003-06-24 | 2004-06-09 | ウェハプロセス内でのインサイチュ測定を統合するシステム及び方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7252097B2 (ja) |
EP (1) | EP1636835B1 (ja) |
JP (1) | JP4384662B2 (ja) |
KR (1) | KR101047822B1 (ja) |
CN (2) | CN100550334C (ja) |
AT (1) | ATE527689T1 (ja) |
MY (1) | MY135489A (ja) |
TW (1) | TWI246140B (ja) |
WO (1) | WO2005006431A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011501435A (ja) * | 2007-10-18 | 2011-01-06 | ラム リサーチ コーポレーション | レシピ制御されたメニスカスによるウエハ表面の処理においてギャップ値をメニスカスの安定性に相関させるための方法および装置 |
JP2012527785A (ja) * | 2009-05-22 | 2012-11-08 | ラム リサーチ コーポレーション | プロキシミティヘッドの表面形状変更 |
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US8236382B2 (en) * | 2002-09-30 | 2012-08-07 | Lam Research Corporation | Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same |
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US7997288B2 (en) * | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
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US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
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-
2004
- 2004-06-09 WO PCT/US2004/018900 patent/WO2005006431A1/en active Search and Examination
- 2004-06-09 EP EP04755214A patent/EP1636835B1/en not_active Expired - Lifetime
- 2004-06-09 AT AT04755214T patent/ATE527689T1/de not_active IP Right Cessation
- 2004-06-09 CN CNB2004800243864A patent/CN100550334C/zh not_active Expired - Fee Related
- 2004-06-09 JP JP2006517256A patent/JP4384662B2/ja not_active Expired - Fee Related
- 2004-06-09 KR KR1020057024849A patent/KR101047822B1/ko not_active IP Right Cessation
- 2004-06-18 TW TW093117680A patent/TWI246140B/zh not_active IP Right Cessation
- 2004-06-23 CN CN2004800180193A patent/CN1839353B/zh not_active Expired - Fee Related
- 2004-06-24 MY MYPI20042488A patent/MY135489A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011501435A (ja) * | 2007-10-18 | 2011-01-06 | ラム リサーチ コーポレーション | レシピ制御されたメニスカスによるウエハ表面の処理においてギャップ値をメニスカスの安定性に相関させるための方法および装置 |
KR101555390B1 (ko) | 2007-10-18 | 2015-09-23 | 램 리써치 코포레이션 | 레시피 제어 메니스커스에 의한 웨이퍼 표면의 처리에 있어서 갭 값을 메니스커스 안정성에 상관시키기 위한 방법 및 장치 |
JP2012527785A (ja) * | 2009-05-22 | 2012-11-08 | ラム リサーチ コーポレーション | プロキシミティヘッドの表面形状変更 |
Also Published As
Publication number | Publication date |
---|---|
CN1853264A (zh) | 2006-10-25 |
MY135489A (en) | 2008-04-30 |
EP1636835B1 (en) | 2011-10-05 |
TWI246140B (en) | 2005-12-21 |
US20040182422A1 (en) | 2004-09-23 |
CN100550334C (zh) | 2009-10-14 |
JP4384662B2 (ja) | 2009-12-16 |
TW200507145A (en) | 2005-02-16 |
CN1839353B (zh) | 2013-08-21 |
ATE527689T1 (de) | 2011-10-15 |
KR101047822B1 (ko) | 2011-07-08 |
US7252097B2 (en) | 2007-08-07 |
KR20060063805A (ko) | 2006-06-12 |
WO2005006431A1 (en) | 2005-01-20 |
CN1839353A (zh) | 2006-09-27 |
EP1636835A1 (en) | 2006-03-22 |
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