JP2007520801A5 - - Google Patents

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Publication number
JP2007520801A5
JP2007520801A5 JP2006547166A JP2006547166A JP2007520801A5 JP 2007520801 A5 JP2007520801 A5 JP 2007520801A5 JP 2006547166 A JP2006547166 A JP 2006547166A JP 2006547166 A JP2006547166 A JP 2006547166A JP 2007520801 A5 JP2007520801 A5 JP 2007520801A5
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Japan
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data storage
storage area
data
sector
content
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JP2006547166A
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Japanese (ja)
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JP2007520801A (ja
JP5085939B2 (ja
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Priority claimed from US10/751,096 external-priority patent/US7299314B2/en
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JP2006547166A 2003-12-31 2004-12-16 書き込み/消去失敗検出機構を有するフラッシュ記憶システム Expired - Fee Related JP5085939B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/751,096 2003-12-31
US10/751,096 US7299314B2 (en) 2003-12-31 2003-12-31 Flash storage system with write/erase abort detection mechanism
PCT/US2004/042462 WO2005066973A1 (en) 2003-12-31 2004-12-16 Flash storage system with write/erase abort detection mechanism

Publications (3)

Publication Number Publication Date
JP2007520801A JP2007520801A (ja) 2007-07-26
JP2007520801A5 true JP2007520801A5 (enExample) 2008-01-31
JP5085939B2 JP5085939B2 (ja) 2012-11-28

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JP2006547166A Expired - Fee Related JP5085939B2 (ja) 2003-12-31 2004-12-16 書き込み/消去失敗検出機構を有するフラッシュ記憶システム

Country Status (7)

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US (2) US7299314B2 (enExample)
EP (1) EP1700312B1 (enExample)
JP (1) JP5085939B2 (enExample)
KR (1) KR100992985B1 (enExample)
CN (1) CN1902712B (enExample)
TW (1) TWI290321B (enExample)
WO (1) WO2005066973A1 (enExample)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7761770B2 (en) * 2003-05-29 2010-07-20 Emc Corporation Disk controller architecture to allow on-the-fly error correction and write disruption detection
JP2005108273A (ja) * 2003-09-26 2005-04-21 Toshiba Corp 不揮発性半導体記憶装置
US8415302B2 (en) 2004-01-28 2013-04-09 The Regents Of The University Of California Surgical applications for BMP binding protein
US8193312B2 (en) 2004-01-28 2012-06-05 The Regents Of The University Of California Bone morphogenic protein binding peptide
US7681007B2 (en) * 2004-04-15 2010-03-16 Broadcom Corporation Automatic expansion of hard disk drive capacity in a storage device
US7500135B2 (en) * 2004-04-15 2009-03-03 Broadcom Corporation Fault tolerant data storage device
US20050231849A1 (en) * 2004-04-15 2005-10-20 Viresh Rustagi Graphical user interface for hard disk drive management in a data storage system
US20050235283A1 (en) * 2004-04-15 2005-10-20 Wilson Christopher S Automatic setup of parameters in networked devices
US7395402B2 (en) * 2004-04-15 2008-07-01 Broadcom Corporation Method and system of data storage capacity allocation and management using one or more data storage drives
US20050235063A1 (en) * 2004-04-15 2005-10-20 Wilson Christopher S Automatic discovery of a networked device
US7966353B2 (en) * 2005-01-31 2011-06-21 Broadcom Corporation Method and system for flexibly providing shared access to non-data pool file systems
US8065350B2 (en) * 2005-01-31 2011-11-22 Broadcom Corporation Method and system for flexibly providing shared access to data pools
US20060248252A1 (en) * 2005-04-27 2006-11-02 Kharwa Bhupesh D Automatic detection of data storage functionality within a docking station
KR100732628B1 (ko) * 2005-07-28 2007-06-27 삼성전자주식회사 멀티-비트 데이터 및 싱글-비트 데이터를 저장하는 플래시메모리 장치
US7971071B2 (en) * 2006-05-24 2011-06-28 Walkoe Wilbur J Integrated delivery and protection device for digital objects
KR100809319B1 (ko) * 2006-09-13 2008-03-05 삼성전자주식회사 플래시 메모리에서 연속한 섹터 쓰기 요청에 대해 원자성을제공하는 장치 및 방법
KR100833189B1 (ko) * 2006-11-03 2008-05-28 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의환경설정정보 설정 방법
TWI386796B (zh) * 2007-01-04 2013-02-21 Sandisk Il Ltd 用於回復於一主機及一資料儲存裝置之間之一損壞之檔案傳送之方法、主機裝置及與電腦可讀取媒體
US7668018B2 (en) * 2007-04-03 2010-02-23 Freescale Semiconductor, Inc. Electronic device including a nonvolatile memory array and methods of using the same
US8266391B2 (en) * 2007-06-19 2012-09-11 SanDisk Technologies, Inc. Method for writing data of an atomic transaction to a memory device
US20080320253A1 (en) * 2007-06-19 2008-12-25 Andrew Tomlin Memory device with circuitry for writing data of an atomic transaction
US8151034B2 (en) * 2007-09-12 2012-04-03 Sandisk Technologies Inc. Write abort and erase abort handling
KR20090042039A (ko) * 2007-10-25 2009-04-29 삼성전자주식회사 불휘발성 메모리 장치의 데이터 관리 방법
US8832408B2 (en) * 2007-10-30 2014-09-09 Spansion Llc Non-volatile memory array partitioning architecture and method to utilize single level cells and multi-level cells within the same memory
TW200929225A (en) * 2007-12-25 2009-07-01 Powerchip Semiconductor Corp Memory programming method and data access method
US8775758B2 (en) * 2007-12-28 2014-07-08 Sandisk Technologies Inc. Memory device and method for performing a write-abort-safe firmware update
CN101364444B (zh) 2008-02-05 2011-05-11 威盛电子股份有限公司 控制方法及运用该控制方法的存储器及处理系统
TW200951960A (en) * 2008-06-12 2009-12-16 Genesys Logic Inc Flash memory control apparatus having sequential writing and method thereof
TWI399651B (zh) * 2008-09-12 2013-06-21 Communication protocol method and system for input / output device
KR101541736B1 (ko) * 2008-09-22 2015-08-04 삼성전자주식회사 멀티-레벨 셀 플래시 메모리 장치에서의 lsb 페이지 복구 방법
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
AU2010271157A1 (en) 2009-06-23 2012-02-09 The Regents Of The University Of California Enhancement of BMP retention
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
CN102004706B (zh) * 2009-09-01 2012-09-19 联芯科技有限公司 一种基于ftl的闪存擦写掉电保护方法
FR2950465B1 (fr) * 2009-09-21 2012-08-17 St Microelectronics Rousset Methode d'ecriture de donnees dans une memoire non volatile, protegee contre l'arrachement
EP2302637B1 (fr) 2009-09-21 2014-09-03 STMicroelectronics (Rousset) SAS Méthode d'écriture de données dans une mémoire non volatile, protegée contre l'arrachement
US8271719B2 (en) * 2009-10-29 2012-09-18 Freescale Semiconductor, Inc. Non-volatile memory controller device and method therefor
US20110153912A1 (en) * 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8054684B2 (en) * 2009-12-18 2011-11-08 Sandisk Technologies Inc. Non-volatile memory and method with atomic program sequence and write abort detection
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US9396104B1 (en) * 2010-03-22 2016-07-19 Seagate Technology, Llc Accessing compressed data of varying-sized quanta in non-volatile memory
EP2413329B1 (en) * 2010-07-28 2014-03-26 Fujitsu Semiconductor Europe GmbH Electronic apparatuses
EP2466478B1 (en) 2010-12-20 2013-11-27 STMicroelectronics (Grenoble 2) SAS Communication system, and corresponding integrated circuit and method
US9026761B2 (en) * 2010-12-20 2015-05-05 Stmicroelectronics (Grenoble 2) Sas Interface system, and corresponding integrated circuit and method
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
JP5803614B2 (ja) * 2011-11-29 2015-11-04 ソニー株式会社 不揮発性キャッシュメモリ、不揮発性キャッシュメモリの処理方法、コンピュータシステム
US9141308B2 (en) 2011-12-30 2015-09-22 Sandisk Technologies Inc. Controller and method for using a transaction flag for page protection
US20130205066A1 (en) * 2012-02-03 2013-08-08 Sandisk Technologies Inc. Enhanced write abort management in flash memory
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
ITMI20120595A1 (it) 2012-04-12 2013-10-13 St Microelectronics Srl Gestione della cancellazione di pagine operative di un dispositivo di memoria flash tramite pagine di servizio
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
KR101944793B1 (ko) 2012-09-04 2019-02-08 삼성전자주식회사 플래시 메모리를 포함하는 플래시 메모리 시스템 및 그것의 비정상 워드 라인 검출 방법
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
WO2014117328A1 (en) 2013-01-30 2014-08-07 Hewlett-Packard Development Company, L.P. Non-volatile memory write mechanism
US9378829B2 (en) * 2013-02-07 2016-06-28 Cypress Semiconductor Corporation Non-volatile memory device with an EPLI comparator
US9218279B2 (en) 2013-03-15 2015-12-22 Western Digital Technologies, Inc. Atomic write command support in a solid state drive
KR102116983B1 (ko) 2013-08-14 2020-05-29 삼성전자 주식회사 메모리 장치 및 메모리 시스템의 동작 방법.
TWI501242B (zh) * 2013-10-04 2015-09-21 Winbond Electronics Corp 快閃記憶體之抹除方法
KR20150046974A (ko) * 2013-10-23 2015-05-04 에스케이하이닉스 주식회사 저항성 메모리 장치 및 동작 방법과 이를 포함하는 시스템
CN104575604B (zh) * 2013-10-25 2018-01-19 华邦电子股份有限公司 快闪存储器的抹除方法
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
WO2016115737A1 (en) 2015-01-23 2016-07-28 Hewlett-Packard Development Company, L.P. Aligned variable reclamation
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9659619B2 (en) 2015-05-21 2017-05-23 Sandisk Technologies Llc System and method for memory integrated circuit chip write abort indication
KR102491624B1 (ko) * 2015-07-27 2023-01-25 삼성전자주식회사 데이터 저장 장치의 작동 방법과 상기 데이터 저장 장치를 포함하는 시스템의 작동 방법
US9653154B2 (en) * 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9929167B2 (en) * 2016-07-13 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
KR102680421B1 (ko) * 2016-08-29 2024-07-03 삼성전자주식회사 불휘발성 메모리 및 불휘발성 메모리 시스템
KR102730871B1 (ko) * 2016-09-19 2024-11-19 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
TWI616807B (zh) * 2016-11-17 2018-03-01 英屬維京群島商大心電子(英屬維京群島)股份有限公司 資料寫入方法以及儲存控制器
CN106951189B (zh) * 2017-03-17 2019-11-26 数据通信科学技术研究所 一种在线深度擦除flash文件的方法
US11294579B2 (en) 2020-06-18 2022-04-05 Western Digital Technologies, Inc. Mode handling in multi-protocol devices
US11557348B1 (en) 2021-06-24 2023-01-17 Western Digital Technologies, Inc. Enhanced word line stripe erase abort detection
CN115437566B (zh) * 2022-08-24 2026-02-06 杭州华橙软件技术有限公司 一种数据读写方法及装置
US20260037370A1 (en) * 2024-07-31 2026-02-05 Micron Technology, Inc. Probablistically determining memory portions for select gate scanning

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050666A (ja) 1983-08-29 1985-03-20 Hitachi Ltd 記録制御方式
GB9116493D0 (en) 1991-07-30 1991-09-11 Inmos Ltd Read and write circuitry for a memory
JP3391475B2 (ja) * 1992-07-16 2003-03-31 大日本印刷株式会社 データの書き込み方法および読み出し方法ならびにこれらの方法を実施するデータ記録再生装置
FR2703501B1 (fr) 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
JPH09185551A (ja) * 1996-01-08 1997-07-15 Mitsubishi Electric Corp 半導体記憶装置
JP3718578B2 (ja) * 1997-06-25 2005-11-24 ソニー株式会社 メモリ管理方法及びメモリ管理装置
JPH11213626A (ja) * 1998-01-21 1999-08-06 Toshiba Corp データ記録媒体とデータ記録装置とデータ再生装置
JP3640802B2 (ja) * 1998-06-08 2005-04-20 富士通株式会社 データバックアップ方式
US6662334B1 (en) 1999-02-25 2003-12-09 Adaptec, Inc. Method and device for performing error correction on ECC data sectors
JP3920501B2 (ja) 1999-04-02 2007-05-30 株式会社東芝 不揮発性半導体記憶装置及びそのデータ消去制御方法
US6535949B1 (en) * 1999-04-19 2003-03-18 Research In Motion Limited Portable electronic device having a log-structured file system in flash memory
US6564307B1 (en) * 1999-08-18 2003-05-13 International Business Machines Corporation Method, system, and program for logically erasing data
JP2001250388A (ja) * 2000-03-06 2001-09-14 Fujitsu Ltd 消去動作情報を記憶する不揮発性メモリ
JP4031190B2 (ja) * 2000-09-29 2008-01-09 株式会社東芝 メモリカード、不揮発性メモリ、不揮発性メモリのデータ書き込み方法及びデータ書き込み装置
JP4037605B2 (ja) * 2000-12-04 2008-01-23 株式会社東芝 不揮発性メモリユニットのコントローラ、同コントローラを有するメモリシステム及び不揮発性メモリユニットの制御方法
US6549467B2 (en) 2001-03-09 2003-04-15 Micron Technology, Inc. Non-volatile memory device with erase address register
JP3692313B2 (ja) * 2001-06-28 2005-09-07 松下電器産業株式会社 不揮発性メモリの制御方法
KR100877030B1 (ko) 2001-07-25 2009-01-07 소니 가부시끼 가이샤 불휘발성 메모리 및 불휘발성 메모리의 데이터 재기록 방법
JP3675375B2 (ja) * 2001-07-25 2005-07-27 ソニー株式会社 不揮発性メモリ並びに不揮発性メモリのデータ書き換え方法
US6977847B2 (en) 2001-11-23 2005-12-20 M-Systems Flash Disk Pioneers Ltd. Detecting partially erased units in flash devices
US7010662B2 (en) * 2002-02-27 2006-03-07 Microsoft Corporation Dynamic data structures for tracking file system free space in a flash memory device
GB2386212A (en) * 2002-03-09 2003-09-10 Sharp Kk Storing temporally consecutive values in a memory segment that cannot be overwritten using sequential and bridging pointers
JP3978720B2 (ja) * 2002-05-13 2007-09-19 日本電気株式会社 データ記憶方法
US6891690B2 (en) 2002-11-20 2005-05-10 International Business Machines Corporation On-drive integrated sector format raid error correction code system and method
JP3984209B2 (ja) * 2003-07-31 2007-10-03 株式会社東芝 半導体記憶装置

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