KR100992985B1 - 쓰기/삭제 중단 검출 메카니즘을 갖는 플래시 저장 시스템 - Google Patents

쓰기/삭제 중단 검출 메카니즘을 갖는 플래시 저장 시스템 Download PDF

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KR100992985B1
KR100992985B1 KR1020067012950A KR20067012950A KR100992985B1 KR 100992985 B1 KR100992985 B1 KR 100992985B1 KR 1020067012950 A KR1020067012950 A KR 1020067012950A KR 20067012950 A KR20067012950 A KR 20067012950A KR 100992985 B1 KR100992985 B1 KR 100992985B1
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data storage
storage area
data
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KR20060127015A (ko
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제이슨 린
케빈 엠. 콘레이
로버트 씨. 창
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쌘디스크 코포레이션
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/16—Flash programming of all the cells in an array, sector or block simultaneously

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1020067012950A 2003-12-31 2004-12-16 쓰기/삭제 중단 검출 메카니즘을 갖는 플래시 저장 시스템 Expired - Fee Related KR100992985B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/751,096 2003-12-31
US10/751,096 US7299314B2 (en) 2003-12-31 2003-12-31 Flash storage system with write/erase abort detection mechanism

Publications (2)

Publication Number Publication Date
KR20060127015A KR20060127015A (ko) 2006-12-11
KR100992985B1 true KR100992985B1 (ko) 2010-11-08

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US (2) US7299314B2 (enExample)
EP (1) EP1700312B1 (enExample)
JP (1) JP5085939B2 (enExample)
KR (1) KR100992985B1 (enExample)
CN (1) CN1902712B (enExample)
TW (1) TWI290321B (enExample)
WO (1) WO2005066973A1 (enExample)

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Publication number Publication date
US7299314B2 (en) 2007-11-20
US20080065818A1 (en) 2008-03-13
KR20060127015A (ko) 2006-12-11
EP1700312A1 (en) 2006-09-13
CN1902712B (zh) 2012-03-28
WO2005066973A1 (en) 2005-07-21
TW200535853A (en) 2005-11-01
CN1902712A (zh) 2007-01-24
JP5085939B2 (ja) 2012-11-28
EP1700312B1 (en) 2012-09-05
JP2007520801A (ja) 2007-07-26
US20050144362A1 (en) 2005-06-30
TWI290321B (en) 2007-11-21
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