JP2007517358A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007517358A5 JP2007517358A5 JP2006533770A JP2006533770A JP2007517358A5 JP 2007517358 A5 JP2007517358 A5 JP 2007517358A5 JP 2006533770 A JP2006533770 A JP 2006533770A JP 2006533770 A JP2006533770 A JP 2006533770A JP 2007517358 A5 JP2007517358 A5 JP 2007517358A5
- Authority
- JP
- Japan
- Prior art keywords
- coil
- ion beam
- magnetic
- pair
- deflection module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 claims 58
- 238000005468 ion implantation Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 6
- 230000005686 electrostatic field Effects 0.000 claims 3
- 238000006386 neutralization reaction Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/461,702 US6881966B2 (en) | 2003-05-15 | 2003-06-13 | Hybrid magnetic/electrostatic deflector for ion implantation systems |
| PCT/US2004/018788 WO2004114354A2 (en) | 2003-06-13 | 2004-06-14 | A hybrid magnetic/electrostatic deflector for ion implantation systems |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009046436A Division JP4645965B2 (ja) | 2003-06-13 | 2009-02-27 | イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007517358A JP2007517358A (ja) | 2007-06-28 |
| JP2007517358A5 true JP2007517358A5 (enExample) | 2007-11-29 |
| JP4650748B2 JP4650748B2 (ja) | 2011-03-16 |
Family
ID=33538973
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006533770A Expired - Lifetime JP4650748B2 (ja) | 2003-06-13 | 2004-06-14 | イオン注入システムのための磁気偏向器およびイオン注入システム |
| JP2009046436A Expired - Lifetime JP4645965B2 (ja) | 2003-06-13 | 2009-02-27 | イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009046436A Expired - Lifetime JP4645965B2 (ja) | 2003-06-13 | 2009-02-27 | イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6881966B2 (enExample) |
| EP (1) | EP1634316B1 (enExample) |
| JP (2) | JP4650748B2 (enExample) |
| KR (1) | KR101157676B1 (enExample) |
| CN (2) | CN101777481B (enExample) |
| TW (1) | TWI314337B (enExample) |
| WO (1) | WO2004114354A2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4901094B2 (ja) * | 2004-11-30 | 2012-03-21 | 株式会社Sen | ビーム照射装置 |
| JP4964413B2 (ja) * | 2004-11-30 | 2012-06-27 | 株式会社Sen | イオンビーム/荷電粒子ビーム照射装置 |
| JP5042451B2 (ja) | 2004-11-30 | 2012-10-03 | 株式会社Sen | ビーム空間電荷中和装置及びこれを備えたイオン注入装置 |
| US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
| US7361913B2 (en) * | 2005-04-02 | 2008-04-22 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control |
| US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
| US7675047B2 (en) * | 2005-11-15 | 2010-03-09 | Varian Semiconductor Equipment Associates, Inc. | Technique for shaping a ribbon-shaped ion beam |
| US7800082B2 (en) * | 2006-02-15 | 2010-09-21 | Varian Semiconductor Equipment Associates, Inc. | Electromagnet with active field containment |
| US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
| EP2002484A4 (en) | 2006-04-05 | 2016-06-08 | Silicon Genesis Corp | METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS |
| TWI435378B (zh) * | 2006-04-26 | 2014-04-21 | Axcelis Tech Inc | 劑量均勻性校正方法 |
| JP4828305B2 (ja) * | 2006-05-30 | 2011-11-30 | 株式会社Sen | 静電式ビーム偏向走査装置及びビーム偏向走査方法 |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US7227160B1 (en) * | 2006-09-13 | 2007-06-05 | Axcelis Technologies, Inc. | Systems and methods for beam angle adjustment in ion implanters |
| US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
| US7750320B2 (en) * | 2006-12-22 | 2010-07-06 | Axcelis Technologies, Inc. | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
| US7586111B2 (en) * | 2007-07-31 | 2009-09-08 | Axcelis Technologies, Inc. | Ion implanter having combined hybrid and double mechanical scan architecture |
| US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
| US20100065761A1 (en) * | 2008-09-17 | 2010-03-18 | Axcelis Technologies, Inc. | Adjustable deflection optics for ion implantation |
| US9443698B2 (en) * | 2008-10-06 | 2016-09-13 | Axcelis Technologies, Inc. | Hybrid scanning for ion implantation |
| US8466431B2 (en) * | 2009-02-12 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving extracted ion beam quality using high-transparency electrodes |
| US8232532B2 (en) * | 2009-06-23 | 2012-07-31 | Hitachi Global Storage Technologies Netherlands B.V. | Off-axis ion milling device for manufacture of magnetic recording media and method for using the same |
| CN101838797B (zh) * | 2009-12-18 | 2012-07-04 | 上海凯世通半导体有限公司 | 离子注入方法 |
| JP5500500B2 (ja) * | 2010-03-11 | 2014-05-21 | 日新イオン機器株式会社 | 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置 |
| US8847159B2 (en) * | 2011-03-28 | 2014-09-30 | Tokyo Electron Limited | Ion energy analyzer |
| CN102751155B (zh) * | 2011-04-22 | 2015-02-11 | 上海凯世通半导体有限公司 | 束流传输系统及其传输方法 |
| JP5800286B2 (ja) * | 2012-03-09 | 2015-10-28 | 日新イオン機器株式会社 | イオン注入装置 |
| US20150228445A1 (en) * | 2014-02-13 | 2015-08-13 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for three dimensional ion implantation |
| US9455116B2 (en) | 2014-04-30 | 2016-09-27 | Axcells Technologies, Inc. | Angular scanning using angular energy filter |
| CN105895486A (zh) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机 |
| CN106653533B (zh) * | 2015-11-04 | 2018-08-14 | 北京中科信电子装备有限公司 | 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机 |
| JP6854628B2 (ja) * | 2016-11-10 | 2021-04-07 | 東京エレクトロン株式会社 | プラズマ溶射装置及び溶射制御方法 |
| TWI795448B (zh) | 2017-10-09 | 2023-03-11 | 美商艾克塞利斯科技公司 | 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法 |
| WO2020055894A1 (en) * | 2018-09-10 | 2020-03-19 | Exogenesis Corporation | Method and apparatus to eliminate contaminants from an accelerated neutral atom beam to protect a beam target |
| CN109473344B (zh) * | 2018-11-13 | 2021-08-03 | 上海华力微电子有限公司 | 一种离子注入的方法及设备 |
| EP4000355A4 (en) * | 2019-07-19 | 2023-06-28 | Phoenix, LLC | Gas jet deflection in pressurized systems |
| CN112799120B (zh) * | 2019-11-13 | 2024-03-22 | 中国科学院国家空间科学中心 | 一种离子和电子同步测量的双通道静电分析器 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412939A1 (fr) * | 1977-12-23 | 1979-07-20 | Anvar | Implanteur d'ions a fort courant |
| US4737644A (en) * | 1985-10-30 | 1988-04-12 | International Business Machines Corporation | Conductive coated semiconductor electrostatic deflection plates |
| JPH0731996B2 (ja) * | 1985-11-14 | 1995-04-10 | 日新電機株式会社 | イオン注入装置 |
| JP2706471B2 (ja) * | 1987-09-30 | 1998-01-28 | 日本真空技術株式会社 | 静電掃引型イオン注入機用平行掃引装置 |
| DE68922929T2 (de) * | 1988-03-23 | 1996-02-22 | Fujitsu Ltd., Kawasaki, Kanagawa | Photokathoden-Bildprojektionsapparat für die Mustergestaltung auf einer Halbleitervorrichtung. |
| JPH02260356A (ja) * | 1989-03-31 | 1990-10-23 | Ulvac Corp | イオン注入装置における平行走査系 |
| GB9005204D0 (en) * | 1990-03-08 | 1990-05-02 | Superion Ltd | Apparatus and methods relating to scanning ion beams |
| US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
| US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
| JPH04171647A (ja) * | 1990-11-05 | 1992-06-18 | Nec Corp | イオン注入装置 |
| JPH04171648A (ja) * | 1990-11-05 | 1992-06-18 | Nec Corp | イオン注入装置 |
| US5206516A (en) * | 1991-04-29 | 1993-04-27 | International Business Machines Corporation | Low energy, steered ion beam deposition system having high current at low pressure |
| JPH0547339A (ja) * | 1991-08-21 | 1993-02-26 | Nec Corp | イオン注入装置 |
| JP3448352B2 (ja) * | 1994-07-07 | 2003-09-22 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP3358336B2 (ja) * | 1994-10-14 | 2002-12-16 | 日新電機株式会社 | イオン注入装置における注入条件異常検出方法 |
| US5468955A (en) * | 1994-12-20 | 1995-11-21 | International Business Machines Corporation | Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer |
| JPH08212965A (ja) * | 1995-01-31 | 1996-08-20 | Ulvac Japan Ltd | イオン注入装置 |
| GB2344214B (en) | 1995-11-08 | 2000-08-09 | Applied Materials Inc | An ion implanter with improved beam definition |
| JPH09213250A (ja) * | 1996-01-30 | 1997-08-15 | Jeol Ltd | 荷電粒子ビームの偏向装置 |
| US5693939A (en) * | 1996-07-03 | 1997-12-02 | Purser; Kenneth H. | MeV neutral beam ion implanter |
| JP3635818B2 (ja) * | 1996-10-03 | 2005-04-06 | 日新電機株式会社 | イオン注入装置 |
| JPH10199460A (ja) * | 1997-01-09 | 1998-07-31 | Jeol Ltd | 集束イオンビーム装置 |
| JP3371753B2 (ja) * | 1997-04-25 | 2003-01-27 | 日新電機株式会社 | イオン注入装置 |
| US5780863A (en) | 1997-04-29 | 1998-07-14 | Eaton Corporation | Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter |
| JP3449198B2 (ja) * | 1997-10-22 | 2003-09-22 | 日新電機株式会社 | イオン注入装置 |
| JPH11176372A (ja) * | 1997-12-11 | 1999-07-02 | Ulvac Corp | イオン照射装置 |
| JPH11283552A (ja) * | 1998-03-31 | 1999-10-15 | Tadamoto Tamai | イオン注入装置、イオン注入方法、イオンビーム源、及び可変スリット機構 |
| GB9813327D0 (en) * | 1998-06-19 | 1998-08-19 | Superion Ltd | Apparatus and method relating to charged particles |
| DE69916241T2 (de) | 1998-09-24 | 2005-04-14 | Koninklijke Philips Electronics N.V. | Ionenimplantierungsvorrichtung gestaltet zur ausfilterung von neutralen ionen aus dem ionenstrahl und methode |
| US6441382B1 (en) | 1999-05-21 | 2002-08-27 | Axcelis Technologies, Inc. | Deceleration electrode configuration for ultra-low energy ion implanter |
| US6635880B1 (en) * | 1999-10-05 | 2003-10-21 | Varian Semiconductor Equipment Associates, Inc. | High transmission, low energy beamline architecture for ion implanter |
| US6313428B1 (en) * | 1999-10-12 | 2001-11-06 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing space charge of ion beams and wafer charging |
| US6521895B1 (en) | 1999-10-22 | 2003-02-18 | Varian Semiconductor Equipment Associates, Inc. | Wide dynamic range ion beam scanners |
| JP2001126656A (ja) * | 1999-10-25 | 2001-05-11 | Nissin Electric Co Ltd | イオン注入装置 |
| US6946667B2 (en) | 2000-03-01 | 2005-09-20 | Advanced Ion Beam Technology, Inc. | Apparatus to decelerate and control ion beams to improve the total quality of ion implantation |
| US6489622B1 (en) | 2000-03-01 | 2002-12-03 | Advanced Ion Beam Technology, Inc. | Apparatus for decelerating ion beams with minimal energy contamination |
| US6414329B1 (en) * | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
| WO2002052609A2 (en) * | 2000-12-27 | 2002-07-04 | Proteros, Llc | Compact beamline and ion implanter system using same |
| JP3869680B2 (ja) | 2001-05-29 | 2007-01-17 | 株式会社 Sen−Shi・アクセリス カンパニー | イオン注入装置 |
| JP3941434B2 (ja) * | 2001-08-09 | 2007-07-04 | 日新イオン機器株式会社 | イオン注入装置およびその運転方法 |
| JP3738734B2 (ja) * | 2002-02-06 | 2006-01-25 | 日新電機株式会社 | 静電加速管およびそれを備えるイオン注入装置 |
| EP2800144A1 (en) * | 2013-05-03 | 2014-11-05 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
-
2003
- 2003-06-13 US US10/461,702 patent/US6881966B2/en not_active Expired - Lifetime
-
2004
- 2004-06-11 TW TW093116808A patent/TWI314337B/zh not_active IP Right Cessation
- 2004-06-14 EP EP04755134A patent/EP1634316B1/en not_active Expired - Lifetime
- 2004-06-14 JP JP2006533770A patent/JP4650748B2/ja not_active Expired - Lifetime
- 2004-06-14 CN CN2009102668721A patent/CN101777481B/zh not_active Expired - Fee Related
- 2004-06-14 WO PCT/US2004/018788 patent/WO2004114354A2/en not_active Ceased
- 2004-06-14 KR KR1020057023293A patent/KR101157676B1/ko not_active Expired - Fee Related
- 2004-06-14 CN CN200480016510A patent/CN100592459C/zh not_active Expired - Fee Related
-
2009
- 2009-02-27 JP JP2009046436A patent/JP4645965B2/ja not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007517358A5 (enExample) | ||
| CN100592459C (zh) | 用于离子注入系统的混合型磁性/静电偏转器 | |
| US20030122076A1 (en) | Charged-particle beam apparatus equipped with aberration corrector | |
| JP5176903B2 (ja) | イオン注入装置 | |
| WO2011127394A1 (en) | Improved ion source | |
| JP2008503067A (ja) | 改良したイオン注入均一化のためのイオンビーム走査システム及び方法 | |
| JP5576397B2 (ja) | 走査型フィールド効果が軽減されたイオン注入 | |
| US20050017194A1 (en) | Charged-particle beam instrument and method of correcting aberration therein | |
| JP6453756B2 (ja) | イオンビーム処理装置 | |
| JP4793696B2 (ja) | イオン注入システムにおいて引き出されたイオンビームの選択的プレディスパージョンのための方法及び装置 | |
| JP2009295475A (ja) | イオン注入装置およびビーム軌道補正方法 | |
| KR102628780B1 (ko) | 이온 빔을 조작하기 위한 기술들 및 장치 | |
| JPH11126571A (ja) | 対物レンズ装置 | |
| JP2013254722A (ja) | ターゲット位置における異なるビーム・エネルギーで動作する集束荷電粒子カラム | |
| JP6428726B2 (ja) | イオン注入システム | |
| US7164139B1 (en) | Wien filter with reduced chromatic aberration | |
| JP2018530865A5 (ja) | イオンビームを操作するための方法及び装置並びにイオン注入機 | |
| US7253572B2 (en) | Electromagnetic induced accelerator based on coil-turn modulation | |
| JPH07191169A (ja) | イオン偏向磁石及びイオン偏向方法 | |
| EP3540757B1 (en) | Mass analysis apparatus and mass analysis method | |
| TW201805989A (zh) | 多行帶電粒子束曝光設備 | |
| JP3716711B2 (ja) | イオン照射装置におけるイオン成分比の計測方法 | |
| JP3844253B2 (ja) | 粒子ビーム色収差補償コラム | |
| JP2008047491A (ja) | 偏向電磁石およびそれを備えるイオン注入装置 | |
| JPH04104433A (ja) | イオン源 |