JP2007517358A5 - - Google Patents

Download PDF

Info

Publication number
JP2007517358A5
JP2007517358A5 JP2006533770A JP2006533770A JP2007517358A5 JP 2007517358 A5 JP2007517358 A5 JP 2007517358A5 JP 2006533770 A JP2006533770 A JP 2006533770A JP 2006533770 A JP2006533770 A JP 2006533770A JP 2007517358 A5 JP2007517358 A5 JP 2007517358A5
Authority
JP
Japan
Prior art keywords
coil
ion beam
magnetic
pair
deflection module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006533770A
Other languages
English (en)
Japanese (ja)
Other versions
JP4650748B2 (ja
JP2007517358A (ja
Filing date
Publication date
Priority claimed from US10/461,702 external-priority patent/US6881966B2/en
Application filed filed Critical
Publication of JP2007517358A publication Critical patent/JP2007517358A/ja
Publication of JP2007517358A5 publication Critical patent/JP2007517358A5/ja
Application granted granted Critical
Publication of JP4650748B2 publication Critical patent/JP4650748B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2006533770A 2003-06-13 2004-06-14 イオン注入システムのための磁気偏向器およびイオン注入システム Expired - Lifetime JP4650748B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/461,702 US6881966B2 (en) 2003-05-15 2003-06-13 Hybrid magnetic/electrostatic deflector for ion implantation systems
PCT/US2004/018788 WO2004114354A2 (en) 2003-06-13 2004-06-14 A hybrid magnetic/electrostatic deflector for ion implantation systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009046436A Division JP4645965B2 (ja) 2003-06-13 2009-02-27 イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法

Publications (3)

Publication Number Publication Date
JP2007517358A JP2007517358A (ja) 2007-06-28
JP2007517358A5 true JP2007517358A5 (enExample) 2007-11-29
JP4650748B2 JP4650748B2 (ja) 2011-03-16

Family

ID=33538973

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006533770A Expired - Lifetime JP4650748B2 (ja) 2003-06-13 2004-06-14 イオン注入システムのための磁気偏向器およびイオン注入システム
JP2009046436A Expired - Lifetime JP4645965B2 (ja) 2003-06-13 2009-02-27 イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009046436A Expired - Lifetime JP4645965B2 (ja) 2003-06-13 2009-02-27 イオン注入システムのための磁気/静電式ハイブリッド偏向器およびイオンビームの偏向方法

Country Status (7)

Country Link
US (1) US6881966B2 (enExample)
EP (1) EP1634316B1 (enExample)
JP (2) JP4650748B2 (enExample)
KR (1) KR101157676B1 (enExample)
CN (2) CN101777481B (enExample)
TW (1) TWI314337B (enExample)
WO (1) WO2004114354A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901094B2 (ja) * 2004-11-30 2012-03-21 株式会社Sen ビーム照射装置
JP4964413B2 (ja) * 2004-11-30 2012-06-27 株式会社Sen イオンビーム/荷電粒子ビーム照射装置
JP5042451B2 (ja) 2004-11-30 2012-10-03 株式会社Sen ビーム空間電荷中和装置及びこれを備えたイオン注入装置
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7361913B2 (en) * 2005-04-02 2008-04-22 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
US7800082B2 (en) * 2006-02-15 2010-09-21 Varian Semiconductor Equipment Associates, Inc. Electromagnet with active field containment
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
EP2002484A4 (en) 2006-04-05 2016-06-08 Silicon Genesis Corp METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
JP4828305B2 (ja) * 2006-05-30 2011-11-30 株式会社Sen 静電式ビーム偏向走査装置及びビーム偏向走査方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US7586111B2 (en) * 2007-07-31 2009-09-08 Axcelis Technologies, Inc. Ion implanter having combined hybrid and double mechanical scan architecture
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US8232532B2 (en) * 2009-06-23 2012-07-31 Hitachi Global Storage Technologies Netherlands B.V. Off-axis ion milling device for manufacture of magnetic recording media and method for using the same
CN101838797B (zh) * 2009-12-18 2012-07-04 上海凯世通半导体有限公司 离子注入方法
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US8847159B2 (en) * 2011-03-28 2014-09-30 Tokyo Electron Limited Ion energy analyzer
CN102751155B (zh) * 2011-04-22 2015-02-11 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5800286B2 (ja) * 2012-03-09 2015-10-28 日新イオン機器株式会社 イオン注入装置
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9455116B2 (en) 2014-04-30 2016-09-27 Axcells Technologies, Inc. Angular scanning using angular energy filter
CN105895486A (zh) * 2014-12-18 2016-08-24 北京中科信电子装备有限公司 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机
CN106653533B (zh) * 2015-11-04 2018-08-14 北京中科信电子装备有限公司 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机
JP6854628B2 (ja) * 2016-11-10 2021-04-07 東京エレクトロン株式会社 プラズマ溶射装置及び溶射制御方法
TWI795448B (zh) 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
WO2020055894A1 (en) * 2018-09-10 2020-03-19 Exogenesis Corporation Method and apparatus to eliminate contaminants from an accelerated neutral atom beam to protect a beam target
CN109473344B (zh) * 2018-11-13 2021-08-03 上海华力微电子有限公司 一种离子注入的方法及设备
EP4000355A4 (en) * 2019-07-19 2023-06-28 Phoenix, LLC Gas jet deflection in pressurized systems
CN112799120B (zh) * 2019-11-13 2024-03-22 中国科学院国家空间科学中心 一种离子和电子同步测量的双通道静电分析器

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4737644A (en) * 1985-10-30 1988-04-12 International Business Machines Corporation Conductive coated semiconductor electrostatic deflection plates
JPH0731996B2 (ja) * 1985-11-14 1995-04-10 日新電機株式会社 イオン注入装置
JP2706471B2 (ja) * 1987-09-30 1998-01-28 日本真空技術株式会社 静電掃引型イオン注入機用平行掃引装置
DE68922929T2 (de) * 1988-03-23 1996-02-22 Fujitsu Ltd., Kawasaki, Kanagawa Photokathoden-Bildprojektionsapparat für die Mustergestaltung auf einer Halbleitervorrichtung.
JPH02260356A (ja) * 1989-03-31 1990-10-23 Ulvac Corp イオン注入装置における平行走査系
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
JPH04171647A (ja) * 1990-11-05 1992-06-18 Nec Corp イオン注入装置
JPH04171648A (ja) * 1990-11-05 1992-06-18 Nec Corp イオン注入装置
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
JPH0547339A (ja) * 1991-08-21 1993-02-26 Nec Corp イオン注入装置
JP3448352B2 (ja) * 1994-07-07 2003-09-22 株式会社日立製作所 半導体装置の製造方法
JP3358336B2 (ja) * 1994-10-14 2002-12-16 日新電機株式会社 イオン注入装置における注入条件異常検出方法
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
JPH08212965A (ja) * 1995-01-31 1996-08-20 Ulvac Japan Ltd イオン注入装置
GB2344214B (en) 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
JPH09213250A (ja) * 1996-01-30 1997-08-15 Jeol Ltd 荷電粒子ビームの偏向装置
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
JP3635818B2 (ja) * 1996-10-03 2005-04-06 日新電機株式会社 イオン注入装置
JPH10199460A (ja) * 1997-01-09 1998-07-31 Jeol Ltd 集束イオンビーム装置
JP3371753B2 (ja) * 1997-04-25 2003-01-27 日新電機株式会社 イオン注入装置
US5780863A (en) 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JPH11176372A (ja) * 1997-12-11 1999-07-02 Ulvac Corp イオン照射装置
JPH11283552A (ja) * 1998-03-31 1999-10-15 Tadamoto Tamai イオン注入装置、イオン注入方法、イオンビーム源、及び可変スリット機構
GB9813327D0 (en) * 1998-06-19 1998-08-19 Superion Ltd Apparatus and method relating to charged particles
DE69916241T2 (de) 1998-09-24 2005-04-14 Koninklijke Philips Electronics N.V. Ionenimplantierungsvorrichtung gestaltet zur ausfilterung von neutralen ionen aus dem ionenstrahl und methode
US6441382B1 (en) 1999-05-21 2002-08-27 Axcelis Technologies, Inc. Deceleration electrode configuration for ultra-low energy ion implanter
US6635880B1 (en) * 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
US6521895B1 (en) 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
JP2001126656A (ja) * 1999-10-25 2001-05-11 Nissin Electric Co Ltd イオン注入装置
US6946667B2 (en) 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6489622B1 (en) 2000-03-01 2002-12-03 Advanced Ion Beam Technology, Inc. Apparatus for decelerating ion beams with minimal energy contamination
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same
JP3869680B2 (ja) 2001-05-29 2007-01-17 株式会社 Sen−Shi・アクセリス カンパニー イオン注入装置
JP3941434B2 (ja) * 2001-08-09 2007-07-04 日新イオン機器株式会社 イオン注入装置およびその運転方法
JP3738734B2 (ja) * 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
EP2800144A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module

Similar Documents

Publication Publication Date Title
JP2007517358A5 (enExample)
CN100592459C (zh) 用于离子注入系统的混合型磁性/静电偏转器
US20030122076A1 (en) Charged-particle beam apparatus equipped with aberration corrector
JP5176903B2 (ja) イオン注入装置
WO2011127394A1 (en) Improved ion source
JP2008503067A (ja) 改良したイオン注入均一化のためのイオンビーム走査システム及び方法
JP5576397B2 (ja) 走査型フィールド効果が軽減されたイオン注入
US20050017194A1 (en) Charged-particle beam instrument and method of correcting aberration therein
JP6453756B2 (ja) イオンビーム処理装置
JP4793696B2 (ja) イオン注入システムにおいて引き出されたイオンビームの選択的プレディスパージョンのための方法及び装置
JP2009295475A (ja) イオン注入装置およびビーム軌道補正方法
KR102628780B1 (ko) 이온 빔을 조작하기 위한 기술들 및 장치
JPH11126571A (ja) 対物レンズ装置
JP2013254722A (ja) ターゲット位置における異なるビーム・エネルギーで動作する集束荷電粒子カラム
JP6428726B2 (ja) イオン注入システム
US7164139B1 (en) Wien filter with reduced chromatic aberration
JP2018530865A5 (ja) イオンビームを操作するための方法及び装置並びにイオン注入機
US7253572B2 (en) Electromagnetic induced accelerator based on coil-turn modulation
JPH07191169A (ja) イオン偏向磁石及びイオン偏向方法
EP3540757B1 (en) Mass analysis apparatus and mass analysis method
TW201805989A (zh) 多行帶電粒子束曝光設備
JP3716711B2 (ja) イオン照射装置におけるイオン成分比の計測方法
JP3844253B2 (ja) 粒子ビーム色収差補償コラム
JP2008047491A (ja) 偏向電磁石およびそれを備えるイオン注入装置
JPH04104433A (ja) イオン源